A film thickness measuring device includes: a stage on which a substrate is disposed; a light emitter/receiver configured to emit light for measuring a film thickness to the substrate disposed on the stage and receive a reflected light from the substrate disposed on the stage; a rotation mechanism configured to rotate the stage; an orientation detector configured to detect an orientation of the stage; and a controller. Based on a detection result by the orientation detector, the controller controls the rotation mechanism so that the orientation of the stage becomes a desired orientation when the substrate is disposed.

A height detection apparatus successively changes the brightness of white light from a first level to a second level in accordance with a position of a Z stage and captures an image of interference light while moving a two-beam interference objective lens relative to a paste film in an optical axis direction, detects, as a focus position, a position of the Z stage where the intensity of interference light is highest in a period during which the brightness of white light is set to the first or second level, for each pixel of the captured image, and obtains the height of the paste film based on a detection result.

A coating thickness measuring device is configured to measure a thickness of a coating material applied to a substrate which is fed by a coating roll on which the substrate is rolled. The coating thickness measuring device includes a coating thickness measurement module, wherein the coating thickness measurement module includes a light applying unit configured to apply light to a surface of the coating material applied to a portion of the substrate rolled on the coating roll, a light acquisition unit configured to acquire light reflected from the surface of the coating material, and a processor configured to calculate the thickness of the coating material based on the acquired light. Accordingly, when measuring the thickness of the coating material the thickness measurement accuracy may be improved. A coating device including the same is also provided.

A method for measuring the thickness of coatings on metal substrates comprises illuminating a sample comprising a substrate and a coating with light waves of varying wavelengths from a light source, receiving the light waves reflected by the sample at a light collector, diffracting the light waves into a plurality of component wavelengths with a grating, detecting the light intensities of the plurality of component wavelengths at a detector array, generating a reflectance spectral curve using the detected light intensities for each of the plurality of component wavelengths, calculating the thickness of the coating from the reflectance spectral curves of the component wavelengths.

Multiple theoretical reflectances determined by simulation for a silicon substrate with thin films of multiple types and thicknesses formed thereon are registered in association with the types and the thicknesses in a database. A carrier storing semiconductor wafers in a lot is transported into a heat treatment apparatus. A reflectance of a semiconductor wafer is measured by applying light to a surface of the semiconductor wafer. The theoretical reflectance of the semiconductor wafer is calculated from the measured reflectance thereof. A theoretical reflectance closely resembling the theoretical reflectance of the semiconductor wafer is extracted from among the multiple theoretical reflectances registered in the database, whereby the type and thickness of the thin film formed on the surface of the semiconductor wafer are specified. Treatment conditions for the semiconductor wafer are determined based on the specified type and thickness of the thin film.

Provided is a processing state detection unit includes: a light emission detection unit configured to detect light emission of the plasma; a calculation unit configured to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit configured to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit configured to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

In thickness/depth measurement of a wafer in etching, variation occurs in detected light quantity due to fluctuation of light quantity of a light source or fluctuation of air in a region through which light passes, and measurement accuracy of thickness/depth is reduced, and thus the total light quantity or average light quantity of an arbitrary wavelength is calculated from an optical spectrum measured at each time instant during etching, estimated total light quantity or estimated average light quantity at the present time, which is estimated using total light quantity or average light quantity measured prior to the present time, is calculated, a change rate, as a ratio of the total light quantity at the present time to the estimated total light quantity or a ratio of the average light quantity to the estimated average light quantity, is calculated, the calculated change rate is used to correct light quantity of each wavelength at the present time, and the corrected light quantity of each wavelength is used to perform thickness/depth measurement.

An inspection method with which a separator having improved quality can be efficiently obtained is provided. The inspection method is a method for inspecting a nonaqueous electrolyte secondary battery separator that includes a polyolefin porous film. The inspection method includes a step of detecting a defect in the polyolefin porous film with the use of a color camera.

Method for measuring thickness of coatings includes illuminating an automobile sample comprising a substrate and at least one coating with light waves of varying wavelengths from a light source. It further includes receiving the light waves reflected by a top surface and a bottom surface of the coating on the sample at the light collector. It also includes diffracting the light waves into a plurality of component wavelengths with a grating, detecting light intensities of the plurality of component wavelengths at a detector array, generating a combined reflected interference pattern spectral curve using the detected light intensities for each of the received light waves for each of the plurality of component wavelengths, and calculating a thickness of the at least one coating from a frequency of the combined reflected interference pattern spectral curve of the component wavelengths.

A method for measuring a thickness of a coating includes illuminating a substrate of an appliance with light waves of varying wavelengths from a light source. The method further includes receiving the light waves reflected by a top surface and a bottom surface of the coating at a light collector. The method may further include diffracting the light waves into a plurality of component wavelengths with a grating, and detecting light intensities of the plurality of component wavelengths at a detector array. The method may further include calculating a thickness of the coating from the detected light intensities.