The disclosed subject matter relates to a measuring device for measuring the flow velocity of a flowing fluid, comprising a first measuring element, which is configured to measure the flow velocity of the fluid and includes an interface that can be exposed to the flowing fluid, a second measuring element, which is configured to measure a characteristic property of the fluid and includes an interface that can be exposed to the flowing fluid, and an evaluation unit, which is connected to the first and second measuring elements and configured to correct the flow velocity, measured by the first measuring element, by the influence of the property of the fluid, measured by the second measuring element, on the measurement of the flow velocity. The disclosed subject matter furthermore relates to a measuring probe for such a measuring device.

We disclose herewith a heterostructure-based sensor comprising a substrate comprising an etched portion and a substrate portion; a device region located on the etched portion and the substrate portion; the device region comprising at least one membrane region which is an area over the etched portion of the substrate. At least one heterostructure-based element is located at least partially within or on the at least one membrane region, the heterostructure-based element comprising at least one two dimensional (2D) carrier gas.

We disclose herein a flow and thermal conductivity sensor comprising a semiconductor substrate comprising an etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the semiconductor substrate and a heating element located within the dielectric membrane. The dielectric membrane comprises one or more discontinuities located between the heating element and an edge of the dielectric membrane.

A CMOS-based sensing device includes a substrate including an etched portion and a first region located on the substrate. The first region includes a membrane region formed over an area of the etched portion of the substrate, a flow sensor formed within the membrane region and a pressure sensor formed within the membrane region.

The flow rate measurement device according to one aspect of the present invention comprises a heating unit for heating a fluid; temperature sensing units that are provided flanking the heating unit in the direction of fluid flow, and that sense the temperature of the heated fluid; a flow rate calculation unit that calculates the flow rate of the fluid on the basis of a sensing signals outputted from the temperature sensing units; angle calculation unit for calculating the tilt angle of the temperature sensing units with respect to a specific reference plane; a storage unit that stores the relation between the flow rate, the tilt angle, and a flow rate correction value; and a flow rate correction unit that corrects the flow rate by using the flow rate correction value stored in the storage unit.

The present disclosure relates to a method for manufacturing a probe of a thermal, flow measuring device for measuring mass flow of a liquid in a measuring tube, wherein the method includes: introducing a probe core including a hard solder and a core element into a first probe sleeve, wherein the first probe sleeve has an open first end and a closed second end away from the first end; melting the hard solder; affixing the core element by cooling the hard solder to a temperature less than the solidification temperature; and applying a thermoelement to a contact area of the core element or of the solidified hard solder. The present disclosure relates, furthermore, to a probe resulting from the manufacturing process as well as to a flow measuring device having at least one probe of the-present disclosure.

The flow rate measurement device according to one aspect of the present invention comprises a heating unit for heating a fluid; temperature sensing units that are provided flanking the heating unit in the direction of fluid flow, and that sense the temperature of the heated fluid; a flow rate calculation unit that calculates the flow rate of the fluid on the basis of a sensing signals outputted from the temperature sensing units; angle calculation unit for calculating the tilt angle of the temperature sensing units with respect to a specific reference plane; a storage unit that stores the relation between the flow rate, the tilt angle, and a flow rate correction value; and a flow rate correction unit that corrects the flow rate by using the flow rate correction value stored in the storage unit.

There is disclosed herein a flow sensor comprising: a first substrate comprising an etched portion; a dielectric layer located on the first substrate, where the dielectric layer comprises at least one dielectric membrane located over the etched portion of the first substrate; a first heating element and a second heating element located on or within the dielectric membrane; and a controller coupled with the first heating element and the second heating element. The first heating element and the second heating element are arranged to intersect one another within or over an area of the dielectric membrane. The controller is configured to: take a measurement from the second heating element; determine a calibration parameter using the measurement from the second heating element; take a measurement from the first heating element; and determine a flow rate through the flow sensor using the determined calibration parameter and the measurement from the first heating element.

We disclose herein a flow sensor comprising: a first substrate comprising an etched portion, a dielectric region located on a first side of the first substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the first substrate, a sensing element located on or within the dielectric membrane, and a second substrate adjoining a second side of the first substrate. The first side of the first substrate and the second side of the first substrate are opposite sides. The first substrate and the second substrate cooperate to form a sensing channel through the flow sensor.

We disclose herein a flow and thermal conductivity sensor comprising a semiconductor substrate comprising an etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the semiconductor substrate and a heating element located within the dielectric membrane. The dielectric membrane comprises one or more discontinuities located between the heating element and an edge of the dielectric membrane.