A system includes a first tube of a plurality of tubes, the first tube having a first end and a second end. The system further includes a light detector positioned at the second end of the first tube. The light detector is configured to detect an incoming light and determine light intensity information of the incoming light. The system further includes a material coupled to the first end of the first tube. The material is configured to change in transparency. The system further comprises a processor coupled to the light detector and the material. The processor is configured to receive the light intensity information from the light detector. The processor is further configured to determine that an intensity of the incoming light is above a threshold, and, in response to determining that the intensity is above the threshold, cause a change in transparency of the material.

An electronic device may be provided with input-output devices and other components such as optical components that emit light and optical components that detect light. An optical component covering structure may be interposed between an interior region of the electronic device and an exterior region that surrounds the electronic device. The optical components may be formed in the interior region of the electronic device. The optical component covering structure may overlap the optical components. The optical component covering structure may be configured to exhibit a flat visible light transmission spectrum. This neutral light transmission characteristic allows the overlapped optical components to emit and/or receive light through the optical component covering structure without imposing an undesired color cast. The optical component covering structure may include first and second layers with complementary light transmission characteristics. When viewed from the exterior region, the optical component covering structure may exhibit a non-neutral color.

Aspects of embodiments pertain to a sensing systems configured to receive scene electromagnetic (EM) radiation comprising a first wavelength (WL1) range and a second wavelength (WL2) range. The sensing system comprises at least one spectral filter configured to filter the received scene EM radiation to obtain EM radiation in the WL1 range and the WL2 ranges; and a self-adaptive electromagnetic (EM) energy attenuating structure. The self-adaptive EM energy attenuating structure may comprise material that includes nanosized particles which are configured such that high intensity EM radiation at the WL1 range incident onto a portion of the self-adaptive EM energy attenuating structure causes interband excitation of one or more electron-hole pairs, thereby enabling intraband transition in the portion of the self-adaptive EM energy attenuating structure by EM radiation in the WL2 range.

An optical sensing device includes a substrate, a sensing element layer, a light-shielding layer, and a light absorbing layer. The substrate has a first surface and a second surface opposite to each other. The sensing element layer is disposed on the first surface and includes multiple sensing elements. The light-shielding layer is disposed on the sensing element layer and has multiple openings. An orthogonal projection of the opening on the substrate overlaps an orthogonal projection of the sensing element on the substrate. The light absorbing layer is disposed on the second surface. An electronic apparatus including the optical sensing device is also provided.

The present application discloses a nano-textured attenuator which includes a body defining an input aperture, a measurement aperture, and at least one beam dump aperture. At least one coupling fixture may be formed on or positioned on the body, a first nano-textured beamsplitter is positioned within the body and configured to transmit 85% to 99.9999% of an input beam therethrough while reflecting 0.0001% of the input beam to form a partially attenuated beam, at least a second nano-textured beamsplitter is also positioned within the body and is configured to transmit 85% to 99.9999% of the partially attenuated beam therethrough while reflecting 0.0001% of the partially attenuated beam to form an attenuated measurement beam, and at least one camera in communication with the measurement aperture be configured to measure at least one optical characteristic of the attenuated measurement beam.

A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.

An apparatus, method and system for resolving an n-number of photons from an optical source multiphoton event, the apparatus includes a cryostat includes a single-pixel superconducting nanowire single-photon detector (SNSPD) configured to receive an optical signal and therefrom produce a corresponding electrical signal, and a current bias source configured to supply a bias current to the SNSPD. The apparatus further includes a low-noise amplifier configured to produce a low-noise amplified electrical signal from the electrical signal, a signal processing circuit configured to receive the low-noise amplified electrical signal having a waveform rising edge of an n-number photon event to produce either a time-differentiated electrical signal by processing the waveform rising edge with a differentiating circuit to generate a differentiated peak corresponding to the n-number photon event, or a time-to-amplitude electrical signal by processing the waveform rising edge with a precision timing circuit to generate a rise time measurement corresponding to the n-number photon event. The apparatus further includes an amplitude discriminating device configured to determine an integer n-number photon event based on measuring a value of the n-number photon event.

A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.

A laser beam profile measurement device includes: a plate-like or block-like fluorescence generation element including an incidence surface on which a laser light is incident and an emission surface from which the laser light is emitted; a light separation element for separating fluorescence from the laser light, the fluorescence generated in the fluorescence generation element and emitted from the emission surface; and an image element for receiving the fluorescence. The fluorescence generation element includes a first film formed on the incidence surface thereof. The first film has a wavelength-to-reflectance characteristic of transmitting a wavelength λ1 of the laser light and reflecting a wavelength λ2 of the fluorescence. The first film has a wavelength-to-reflectance characteristic of transmitting a wavelength λ1 of the laser light and reflecting a wavelength λ2 of the fluorescence. The light separation element may include a second film having a wavelength-to-reflectance characteristic of transmitting the wavelength λ2 and reflecting the wavelength λ1 or a third film having a wavelength-to-reflectance characteristic of reflecting the wavelength λ2 and transmitting the wavelength λ1. The first film may further have a wavelength-to-reflectance characteristic of reflecting a wavelength λ0 between the wavelength λ1 and the wavelength λ2, while the second film may further have a wavelength-to-reflectance characteristic of reflecting the wavelength λ0. Alternatively, the first film may further have the wavelength-to-reflectance characteristic of reflecting the wavelength λ0 between the wavelength λ1 and the wavelength λ2, while the third film may further have a wavelength-to-reflectance characteristic of transmitting the wavelength λ0.

A measurement device for a light-emitting device includes a light attenuator, a photometric sphere, and a light detector. The light attenuator includes a first surface and a heat dissipator. A first light that is emitted from the first light-emitting device is incident on the first surface. The first surface is configured to absorb a portion of the first light. The heat dissipator is configured to dissipate heat of the first surface. The photometric sphere has an inner surface to reflect the first light reflected by the first surface. The light detector is configured to receive at least a portion of the first light reflected by the inner surface.