A method for forming a cellulose acetate based reduced graphene oxide (CA-rGO) layer includes selecting a substrate; spin-coating a cellulose acetate dispersion on the substrate to obtain a cellulose acetate layer; and applying a given temperature profile to the cellulose acetate layer to transform it into the CA-rGO layer.

A phototransistor apparatus and a method of operating the phototransistor apparatus. The phototransistor apparatus can include a phototransistor, a light source, and a supply voltage associated with the phototransistor. After switching on the supply voltage, the phototransistor can generate a phototransistor signal that is scanned, wherein the supply voltage associated with the phototransistor is switched on later than the light source, and wherein charge carriers in a base area of the phototransistor are reactive to a light pulse from the light source in a currentless state, and continue to react after the light source is switched off. Alternatively, the power supply of the phototransistor can be switched on before the light source is switched off. By delaying the switching on of the power supply of the phototransistor compared to the switching on of the light source, a significant current saving can be achieved.

A safety system for a battery-powered fog generator is described, designed to operate on a vaporization coil (2) of a fogging fluid; the safety system includes: a fuse wire (1), each placed at one end of the coil (2), suitable for heating both due to a Joule effect and through heat coming from the coil (2) by thermal conduction, the fusible wire (1) being therefore designed to melt when its temperature exceeds a melting threshold value, interrupting the power supply from the battery to the coil (2); a sensor (6) designed to detect the temperature of the coil (2) when current flows in it; and a control unit (7) operatively connected to the sensor (6).

The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

An optical sensing device is disclosed. The optical sensing device includes a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel includes a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer includes at least one first opening corresponding to the sensing element, and the first light shielding layer is overlapped with the driving circuit in a top-view direction of the optical sensing device.

A transistor includes (i) a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature and (ii) a second wire including a superconducting component configured to operate in a superconducting state while: a temperature of the superconducting component is below a superconducting threshold temperature and a first input current supplied to the superconducting component is below a current threshold. The semiconducting component is located adjacent to the superconducting component. In response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first input current exceeds the lowered current threshold.

A photoelectric detection circuit, a photoelectric detection device and an electronic device. The photoelectric detection circuit includes a first detection sub-circuit configured to be exposed to the environment of light to be detected and having an equivalent resistance that varies with the variation of illumination intensity of the light to be detected in the environment; and a second detection sub-circuit configured to be in a state of fixed illumination intensity and having an equivalent resistance that is constant due to the fixed illumination intensity. The first detection sub-circuit is connected in series with the second detection sub-circuit via a first node N1 and the signal output lead Vout is electrically connected with the first node N1 to output detected electrical signals.

The present invention introduces an arrangement for enhancing the performance of an electronic circuit comprising a phototransistor (Q). Either a common-collector or a common-emitter connected phototransistor (Q) has a main resistor (R.sub.L), and at least one external bias resistors (R.sub.L2, R.sub.L3, R.sub.L4), each in parallel to one another. The microcontroller may directly control the voltage outputs or act via respective switches (S1, S2) regarding each respective resistor. When the electronic circuit with the phototransistor (Q) is switched on, at least one of the external bias resistors (R.sub.L2, R.sub.L3, R.sub.L4) are switched on. The voltage output rise time is short, and when the bias has been set, the external bias resistor(s) are disconnected functionally. This means that during the actual measurement with the electric circuit, only the main resistor (R.sub.L) is used in the connection.

The present embodiment relates to a photon detector which includes a preamplifier having a structure capable of preventing saturation of an amplifier. The preamplifier includes an amplifier, and further includes a capacitive element, an n-type MOSFET, and a p-type MOSFET disposed on a plurality of wirings electrically connecting the input end side and the output end side of the amplifier. A control electrode of the n-type MOSFET is set to a first fixed potential V1, while a control electrode of the p-type MOSFET is set to a second fixed potential V2.

A light detection circuit for a projector is provided. The light detection circuit includes: a light transistor for receiving and sensing reflected light from a side of a color wheel driving motor of the projector, wherein the side of the color wheel driving motor includes a dark region and a bright region; a bias unit coupled to the light transistor for providing a bias voltage; an operation amplifier including a positive input coupled to the bias unit, a negative input coupled to the light transistor and the bias unit, and an output, the base unit providing the bias voltage to the positive input; and a feedback resistor coupled between the negative input of the operation amplifier and the output, wherein, a resistance of the feedback resistor causes the light transistor to be operated in a linear region.