An optical sensing circuit includes a first, a second, and a third optical sensing element and a sampling circuit. The first sensing element provides a first current from a first node to a second node according to an ambient light and a sensing signal. The second optical sensing element drains a second current from the second node to the first node according to the ambient light and the sensing signal. The third optical sensing element is coupled between the first node and the second node. The third optical sensing element receives a first color light, and transmits the first current to the second node or transmits the second current to the first node according to the first color light. The sampling circuit is turned on according to the sampling signal to output a detection signal based on the voltage level of the second node.

A display module and a method for monitoring backlight brightness are provided in the present disclosure. The display module includes a display region including an opening region and a non-opening region. The display module includes a backlight module and an array substrate. The array substrate is at a light-exiting side of the backlight module. The array substrate includes a plurality of gate lines which extends along a first direction and is arranged along a second direction, and further includes a plurality of data signal lines which is arranged along the first direction and extends along the second direction. The array substrate further includes a first substrate and at least one photosensitive unit, where the photosensitive unit is at a side of the first substrate away from the backlight module; and the photosensitive unit is disposed at the non-opening region for sensing a luminous brightness of the backlight module.

An optical sensing circuit includes a capacitor, and a light sensing unit, a compensation unit, and a switching element coupled to the capacitor. The light sensing unit includes a first light sensing transistor for sensing a first color. The compensation unit includes a second light sensing transistor for sensing a second color. The spectra of the second color and the first color do not overlap each other. When the light illuminates, the light sensing unit generates a first current and the compensation unit generates a second current. The second current reduces the magnitude of the charging or discharging current when the capacitor is charged or discharged by the first current. When the switching element turned on, the voltage of the capacitor is read to determine the color of the light. The voltage level of the gate of the first or second light sensing transistor is adjustable.

An apparatus comprises a transparent substrate (3), at least one sensor (5) for the detection of electromagnetic radiation (31), and for each sensor a corresponding mirror having a reflective surface (11). The reflective surface (11) is shaped so that electro-magnetic radiation (31) incident on the transparent substrate (3) at a specific angle, passing through the transparent substrate (3) and being reflected by the reflective surface (11) is directed towards the sensor (5). The sensor (5) comprises a two dimensional material like graphene and may be a quantum dot functionalised graphene field effect transistor. The present invention enables the incident electromagnetic radiation (31) to be focussed onto the at least one sensor (5) without the use of additional optical components like lenses or microlenses. This may enable focussed images to be obtained by the apparatus.

In various embodiments, a simple, robust molybdenum disulfide (MoS.sub.2) based photosensor is provided that is able to detect both light intensity and wavelength. The MoS.sub.2 based photosensor may be structured as a field effect transistor (FET) with a back-gate configuration, including MoS.sub.2 nanoflake layers, an insulating layer coated, doped substrate, and source, drain and backgate electrodes. The photoresponse of the MoS.sub.2 based photosensor exhibits a fast response component that is only weakly dependent on the wavelength of light incident on the sensor and a slow response component that is strongly dependent on the wavelength of light incident on the sensor. The fast response component alone may be analyzed to determine intensity of the light, while the slow response component may be analyzed to determine the wavelength of the light.

A power conversion device includes a switched-mode power supply (SMPS), a photocoupler and a controller. The SMPS receives a pulse width modulation (PWM) signal from the controller to generate a DC output voltage related to a DC input voltage. The photocoupler generates a reference voltage signal based on the DC output voltage. The controller adjusts at least one of a duty cycle or a frequency of the PWM signal based on the reference voltage signal.

A photon source includes a photo-pair generator and a detection device. The photo-pair generator is configured to generate a photon-pair in receiving an input signal. A first photon of the photon-pair is output from the photon source via a first optical path. The detection device is configured to receive a second photon of the photon-pair. The detection device includes a transistor that has a semiconducting component that is a source and a drain of the transistor, and a superconducting component that is adjacent to the semiconducting component and is a gate of the transistor. The transistor is configured to transition from an off state to an on state in response a photon being incident upon the detection device.

An optical sensing circuit includes a capacitor, and a light sensing unit, a compensation unit, and a switching element coupled to the capacitor. The light sensing unit includes a first light sensing transistor for sensing a first color. The compensation unit includes a second light sensing transistor for sensing a second color. The spectra of the second color and the first color do not overlap each other. When the light illuminates, the light sensing unit generates a first current and the compensation unit generates a second current. The second current reduces the magnitude of the charging or discharging current when the capacitor is charged or discharged by the first current. When the switching element turned on, the voltage of the capacitor is read to determine the color of the light. The voltage level of the gate of the first or second light sensing transistor is adjustable.

Methods and systems for reading out a pixel array are provided. An example system may be configured to represent the activity of at least two pixels in the array as at least two digital signals. Further, the example system may be configured to dynamically aggregate the at least two digital signals into one representative analog signal corresponding to the activity of the at least two pixels.

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The P-N junction photodiodes include a blanket oxide over the silicon carbide substrate and the gate, an implant extending into the silicon carbide substrate, and an opening extending through the blanket oxide layer down to the silicon carbide substrate on one side of the gate of the P-N junction photodiode.