A display module and a method for monitoring backlight brightness are provided in the present disclosure. The display module includes a display region including an opening region and a non-opening region. The display module includes a backlight module and an array substrate. The array substrate is at a light-exiting side of the backlight module. The array substrate includes a plurality of gate lines which extends along a first direction and is arranged along a second direction, and further includes a plurality of data signal lines which is arranged along the first direction and extends along the second direction. The array substrate further includes a first substrate and at least one photosensitive unit, where the photosensitive unit is at a side of the first substrate away from the backlight module; and the photosensitive unit is disposed at the non-opening region for sensing a luminous brightness of the backlight module.

Provided are a light intensity detection circuit, a light intensity detection method and an light intensity detection apparatus. The light intensity detection circuit includes a photoelectric conversion sub-circuit, a source follower sub-circuit, a reset sub-circuit, a read sub-circuit and a sense sub-circuit. The photoelectric conversion sub-circuit generates a corresponding electrical signal according to an incident light signal, and outputs it to a first node; the source follower sub-circuit generates a corresponding voltage signal or current signal according to the electrical signal of the first node and outputs it to a second node; the read sub-circuit reads the voltage signal or current signal of the second node to determine an incident light intensity; the reset sub-circuit provides a voltage at a offset voltage terminal to the first node.

An optical scanner unit includes a mirror component, a vibration generator, an optical sensor, and a light shield portion. The mirror component includes a reflective portion for reflecting light. The vibration generator swings the mirror component around a specific swing axis when AC voltage is applied. The optical sensor includes a light emitter and a light receiver for receiving light emitted from the light emitter. The light shield portion is provided to the mirror component so as to swing along with the mirror component. The light shield portion blocks the light emitted from the light emitter. The light receiver further includes a first light receiver that is provided on one swing angle side from a center position of a swing angle range of the light shield portion, and a second light receiver that is provided on the other swing angle side from the center position of the swing angle range.

The present disclosure discloses a metamaterial based metal gate MOSFET detector with gate rasterized, comprising a metamaterial based metal gate MOSFET having a rasterized gate structure and various different grating pattern forms thereof, wherein a gate of the metal gate MOSFET is connected to a first bias resistor and a first bias voltage, a source of the metal gate MOSFET is grounded, a drain of the metal gate MOSFET is connected to a first DC blocking capacitor, the first DC blocking capacitor is connected to a low noise preamplifier, and a second bias resistor and a second bias voltage are connected between the low noise preamplifier and the first DC blocking capacitor. The technical solution according to the present disclosure can completely absorb terahertz waves of a specific frequency band and generate resonance.

An optical sensing circuit includes a first, a second, and a third optical sensing element and a sampling circuit. The first sensing element provides a first current from a first node to a second node according to an ambient light and a sensing signal. The second optical sensing element drains a second current from the second node to the first node according to the ambient light and the sensing signal. The third optical sensing element is coupled between the first node and the second node. The third optical sensing element receives a first color light, and transmits the first current to the second node or transmits the second current to the first node according to the first color light. The sampling circuit is turned on according to the sampling signal to output a detection signal based on the voltage level of the second node.

A photon source includes a photo-pair generator and a detection device. The photo-pair generator is configured to generate a photon-pair in receiving an input signal. A first photon of the photon-pair is output from the photon source via a first optical path. The detection device is configured to receive a second photon of the photon-pair. The detection device includes a transistor that has a semiconducting component that is a source and a drain of the transistor, and a superconducting component that is adjacent to the semiconducting component and is a gate of the transistor. The transistor is configured to transition from an off state to an on state in response a photon being incident upon the detection device.

The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

A light detection circuit for a projector is provided. The light detection circuit includes: a light transistor for receiving and sensing reflected light from a side of a color wheel driving motor of the projector, wherein the side of the color wheel driving motor includes a dark region and a bright region; a bias unit coupled to the light transistor for providing a bias voltage; an operation amplifier including a positive input coupled to the bias unit, a negative input coupled to the light transistor and the bias unit, and an output, the base unit providing the bias voltage to the positive input; and a feedback resistor coupled between the negative input of the operation amplifier and the output, wherein, a resistance of the feedback resistor causes the light transistor to be operated in a linear region.

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.

Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).