A temperature sensor peripheral generates an output voltage that is proportional to temperature, whose temperature coefficient can be adjusted to any desired value, whose temperature coefficient can be either positive or negative, whose room temperature voltage can be adjusted to any desired value, and whose temperature coefficient and room temperature voltage adjustments are independent from one another.

A circuit arrangement comprises a first branch comprising a resistor of variable resistance and a diode-connected bipolar transistor and a second branch comprising a resistor of fixed resistance and another diode-connected bipolar transistor. A control loop reproduces a voltage drop at the resistor of variable resistance to a voltage drop at the resistor of fixed resistance. Output terminals are connected to the bipolar transistors to supply a differential voltage. The circuit arrangement may be used as an analog frontend circuit in a gas sensor or a temperature sensor arrangement.

A temperature detector is used to detect a temperature of a circuit under test, and includes a temperature coefficient component, a multiplier, an impedance component and a node. The temperature coefficient component is arranged in proximity to the circuit under test. A control terminal of the multiplier is coupled to a second terminal of the temperature coefficient component. The impedance component is coupled between the second terminal of the temperature coefficient component and the control terminal of the multiplier, or between a second terminal of the multiplier and a third voltage terminal. The node is formed between the second terminal of the temperature coefficient component and the control terminal of the multiplier. A voltage at the node and an amplified detection current flowing to a first terminal of the multiplier are positively correlated to the temperature of the circuit under test.

A temperature detector is used to detect a temperature of a circuit under test, and includes a temperature coefficient component, a multiplier, an impedance component and a node. The temperature coefficient component is arranged in proximity to the circuit under test. A control terminal of the multiplier is coupled to a second terminal of the temperature coefficient component. The impedance component is coupled between the second terminal of the temperature coefficient component and the control terminal of the multiplier, or between a second terminal of the multiplier and a third voltage terminal. The node is formed between the second terminal of the temperature coefficient component and the control terminal of the multiplier. A voltage at the node and an amplified detection current flowing to a first terminal of the multiplier are positively correlated to the temperature of the circuit under test.

An offset corrected bandgap reference and temperature sensor is disclosed. In a complementary metal-oxide-semiconductor (CMOS) bandgap reference, non-idealities in the operational amplifier (op-amp) bandgap reference circuit can lead to a voltage offset. This operational amplifier offset voltage is the dominant source of error in the bandgap reference. If the bandgap reference is used in a temperature sensor, it only needs to be accurate during the analog-to-digital conversion cycle. Embodiments of the present disclosure employ switched capacitors to store the operational amplifier offset during a sample mode in which the bandgap reference operates continuous-time. The operational amplifier offset is then corrected during a hold mode while the temperature sensor completes the analog-to-digital conversion.

An offset corrected bandgap reference and temperature sensor is disclosed. In a complementary metal-oxide-semiconductor (CMOS) bandgap reference, non-idealities in the operational amplifier (op-amp) bandgap reference circuit can lead to a voltage offset. This operational amplifier offset voltage is the dominant source of error in the bandgap reference. If the bandgap reference is used in a temperature sensor, it only needs to be accurate during the analog-to-digital conversion cycle. Embodiments of the present disclosure employ switched capacitors to store the operational amplifier offset during a sample mode in which the bandgap reference operates continuous-time. The operational amplifier offset is then corrected during a hold mode while the temperature sensor completes the analog-to-digital conversion.

An example device includes a first temperature sensor configured to provide a first current signal indicative of a temperature of a first circuit based on a voltage of a first temperature sensing element. The first circuit includes a power switch device and the first temperature sensing element. A second temperature sensor is configured to provide a second current signal indicative of temperature of a second circuit based on a voltage of a second temperature sensing element. The second circuit includes the second temperature sensing element. A trim circuit is configured to trim current in at least one of the first temperature sensor or the second temperature sensor to compensate for mismatch between temperature coefficients of the first and second temperature sensing elements.

A temperature detector is used to detect a temperature of a circuit under test, and includes a temperature coefficient component, a multiplier, an impedance component and a node. The temperature coefficient component is arranged in proximity to the circuit under test. A control terminal of the multiplier is coupled to a second terminal of the temperature coefficient component. The impedance component is coupled between the second terminal of the temperature coefficient component and the control terminal of the multiplier, or between a second terminal of the multiplier and a third voltage terminal. The node is formed between the second terminal of the temperature coefficient component and the control terminal of the multiplier. A voltage at the node and an amplified detection current flowing to a first terminal of the multiplier are positively correlated to the temperature of the circuit under test.

A temperature detector is used to detect a temperature of a circuit under test, and includes a temperature coefficient component, a multiplier, an impedance component and a node. The temperature coefficient component is arranged in proximity to the circuit under test. A control terminal of the multiplier is coupled to a second terminal of the temperature coefficient component. The impedance component is coupled between the second terminal of the temperature coefficient component and the control terminal of the multiplier, or between a second terminal of the multiplier and a third voltage terminal. The node is formed between the second terminal of the temperature coefficient component and the control terminal of the multiplier. A voltage at the node and an amplified detection current flowing to a first terminal of the multiplier are positively correlated to the temperature of the circuit under test.

A device for performing or enabling an electrical measurement on a measurement layer includes: at least one measurement layer having a layer thickness, and electrical connections connected to and/or adjacent to and serving to determine the electrical resistance of the at least one measuring layer. At least some electrical connections are connected to or adjacent to different length portions of the at least one measuring layer, whereby a measurement for determining the electrical resistance of the at least one measuring layer in the direction of its layer thickness is carried out or made possible. At least some of the electrical connections are connected to or adjacent to different, preferably mutually opposite, surfaces of the at least one measuring layer, whereby a measurement for determining the electrical resistance of the at least one measuring layer is carried out or made possible in the direction transverse to its layer thickness.