We have invented an EUV spectroscopic polarimeter including a light receiving element, a first polarizing modulation element, a second polarizing modulation element, an energy splitting element and a light detecting and analyzing apparatus. The light receiving element is for receiving a target light. The first polarizing modulation element is rotatably connected to the light receiving element for generating a first polarized light. The second polarizing modulation element is rotatably connected to the first polarizing modulation element for generating a second polarized light. The energy splitting element receives the second polarized light so as to generate a modulated-polarization and energy-resolved light. The light detecting and analyzing apparatus receiving the polarization-modulated and energy-resolved light and providing a spectrum information by an analyzing algorithm which is able to retrieve the helicity, ellipticity, tilt angle and the degree of polarization for the whole spectrum of the target light.

Spectral ellipsometry measurement systems are provided including a polarizer that rotates at a first angle and adjusts a polarizing direction of incident light of a measurement sample; a compensator that rotates at a second angle, different from the first angle, and adjusts a phase difference of the incident light; an analyzer that rotates at a third angle and adjusts a polarizing direction of light reflected on the measurement sample; a detector that detects a spectral image from the reflected light; a controller that controls one of the polarizer, the compensator, and the analyzer according to polarizer-compensator-analyzer (PCA) angle sets including the first to third angles; and a processor that receives, from the detector, a first spectral image corresponding to a first PCA angle set and a first wavelength and a second spectral image corresponding to a second PCA angle set and a second wavelength, different from the first wavelength, and generates a polarizer-compensator-analyzer rotating (PCAR) spectral matrix using the first and second spectral images.

According to embodiments, a wafer inspection device is provided. The wafer inspection device includes a porous chuck including a plurality of pores formed all over the porous chuck to allow pressure for fixing a wafer to be applied thereto, a chuck driving device, a back side inspection optical system configured to inspect a portion of a back surface of the wafer, and a position identification optical system, wherein the porous chuck includes a plurality of holes uniformly formed all over the porous chuck to partially expose the back surface of the wafer and a slit exposing the back surface of the wafer and extending in one direction parallel to a top surface of the porous chuck.

A method and device of thin film spectroellipsometric imaging are disclosed. The device comprises an illuminator to direct light through a polarization generator system toward an extended area of a sample; an imaging system to form images; a detection system to record in a plurality of spectral channels; a computer to display and analyze the recorded images; and at least one reference phantom with known optical properties to replace the sample for calibration. The method comprises directing light from an illuminator through a polarization generator system toward an extended area of a sample having a geometrical shape; forming images with an imaging system; adjusting a polarization generator system and a polarization analyzer system to obtain a series of polarimetric setups; recording the images with a detection system in a plurality of spectral channels; replacing the sample with at least one reference phantom; and analyzing the recorded images with a computer.

The present disclosure discloses a method for measuring the film thickness of a semiconductor device. The measuring method includes: providing a reference spectrogram of a main storage region of a reference semiconductor device; obtaining a first measured spectrogram of a main storage region of a semiconductor device to be measured; adjusting a thickness parameter of a target film in the main storage region of the reference semiconductor device within a preset range based on the reference spectrogram, obtaining an adjusted reference spectrogram, and comparing the first measured spectrogram with the adjusted reference spectrogram; if the similarity between the first measured spectrogram and the adjusted reference spectrogram is greater than a first preset value, using the thickness parameter corresponding to the adjusted reference spectrogram as the thickness of the target film in the main storage region of the semiconductor device to be measured.

A system includes a reflector attached to a liner of a processing chamber. A light coupling device is to transmit light, from a light source, through a window of the processing chamber directed at the reflector. The light coupling device focuses, into a spectrometer, light received reflected back from the reflector along an optical path through the processing chamber and the window. The spectrometer detects, within the focused light, a first spectrum representative of a deposited film layer on the reflector using reflectometry. An alignment device aligns, in two dimensions, the light coupling device with the reflector until maximization of the focused light received by the light coupling device.

A method and apparatus for cleaning vacuum ultraviolet (VUV) optics (e.g., one or more mirrors of a VUV) of a substrate inspection system is disclosed. The cleaning system ionizes or disassociates hydrogen gas in a VUV optics environment to generate hydrogen radicals (e.g., H*) or ions (e.g., H.sup.+, H.sub.2.sup.+, H.sub.3.sup.+, which remove water or hydrocarbons from the surface of the one or more mirrors. The one or more VUV mirrors may include a reflective material, such as aluminum. The one or more VUV mirrors may have a protective coating to protect the reflective material from any detrimental reaction to the hydrogen radicals or ions. The protective coating may include a noble metal.

A method for detecting abnormal growth of graphene includes: measuring, through spectroscopic ellipsometry, a reflection spectrum of a measurement object having a graphene film formed through CVD on a substrate; creating a film structure model, calculating polarization parameters, and matching calculated values of the polarization parameters to measured values through fitting; and detecting abnormal growth of the graphene based on a value of goodness of fit obtained when fitting the polarization parameters.

An ellipsometer uses a broadband light source and a Fresnel cone to produce a simultaneous broadband polarization state generator with no moving parts. The detector of the ellipsometer includes a diffractive element to spatially separate the wavelengths of the light from the sample. The wavelengths may be spatially separated sufficiently that there is no overlap of bands of wavelengths when imaged by a two-dimensional sensor or may be temporally separated. Additionally, the detector separates and simultaneously analyzes the polarizations states of the light from the sample so there is no overlap of polarization states when imaged by a two-dimensional sensor and no moving parts are used. The resulting image with separated wavelengths and polarization states may be used to determine at least a partial Mueller matrix for the sample.

An ellipsometer, polarimeter and the like system operating in the infrared spectral range (0.75 μm to 1000 μm), utilizing a tunable quantum cascade laser (QCL) source in combination with dithering capability to reduce speckle and standing wave effects, dual-rotating optical elements, a single-point detector, as well as optional means of reducing the size of the probe beam at the measurement surface and optional chopper for lock-in detection.