A defect inspection apparatus includes a first objective lens having an optical axis is perpendicular to a wafer mounting surface of the stage, a second objective lens having an optical axis forms a predetermined acute angle with respect to the wafer mounting surface of the stage, and a dichroic mirror which reflects light having a first wavelength and transmits or reflects light having a second wavelength. Emitted light of a first optical path 111 from a first light source which is reflected from or transmitted through the dichroic mirror and first emitted light and second emitted light polarized and separated from a second light source which are transmitted through or reflected from the dichroic mirror are incident on the first objective lens, and emitted light of a second optical path from the first light source is incident on the second objective lens.

An optical inspection system that may include an illumination optics configured to generate an illumination light beam and to illuminate a sample with the illumination light beam; at least one collection optics configured to collect light from the sample; at least one detector configured to detect at least one detected light beam outputted from the at least one collection optics; multiple polarizers that are configured to (a) set a polarization of the illumination light beam by selectively introducing, under a control of the control unit, at least one illumination optics polarization change, and (b) set a polarization of the at least one detected light beam by selectively introducing, under a control of the control unit, at least one collection optics polarization change. The multiple polarizers may include one or more illumination half-wave plates, one or more quarter-wave plates, and one or more inhomogeneous polarizers.

A method for inspection for a photovoltaic module or cell is disclosed. The method includes acquiring one or more polarimetric images of the photovoltaic module or cell using a camera which may include a polarization sensor, analyzing the one or more polarimetric images, and identifying a presence of a defect in the photovoltaic module or cell. A device for inspection for a photovoltaic module or cell is also disclosed, wherein the device includes a camera having a polarimetric sensor and is configured to be positioned at one or more locations relative to a location of the photovoltaic module or cell.

Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed. The system may include an illumination source comprising a pump source configured to generate pump light and a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light. The system may also include a detector assembly and a set of optics configured to direct the IR radiation onto a sample and direct a portion of the IR radiation reflected and/or scattered from the sample to the detector assembly.

Apparatuses and methods for inspecting a pharmaceutical cylindrical containers are provided. The apparatus includes a support device, a light emitting unit, and a light receiving unit. The support device supports the pharmaceutical cylindrical container and rotates the cylindrical pharmaceutical container around a longitudinal axis. The light emitting unit has a light source that illuminates the pharmaceutical cylindrical container with a detection beam while the support device rotates the pharmaceutical cylindrical container. The light receiving unit has a camera that acquires polarization information of the detection beam.

A detector has an internal sensing space, and includes a light source unit for emitting light into the sensing space, a reflector for reflecting the light, a sample supply for providing a sample into a path of the light, a first sensor unit for sensing the light reflected by the reflector, and a second sensor unit for sensing at least one of scattered light and fluorescence by the sample. The light source and the first and second sensor units are arranged in the sensing space.

A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The FinFET notch features ensure that sufficient spacing is provided between the gate structure and source/drain regions of the FinFET to avoid inadvertent shorting of the gate structure to the source/drain regions. Gate structures of different sizes (e.g., different gate widths) and of different pattern densities can be provided on a same substrate and avoid inadvertent of shorting the gate to the source/drain regions through application of the notched features.

The present invention relates to defects inspection on a silicon carbide wafer or an epitaxial layer thereon to determine the location, and adjustment of the location of the scribe line, which is a separation line forming a gap between adjacent dies. The present invention can obtain high efficiency and economy in the semiconductor process using wafers containing various defects in the surface and thin film, by minimizing the effect of wafer defects on the final yield of the semiconductor chip or die, via adjustment of scribe line positions arranged on the wafer.

An apparatus for inspecting containers and in particular cans, having an illumination device which illuminates the can to be inspected and radiates radiation onto an inner base wall of the container, and having an image recording device which records at least one spatially resolved image of the inner base wall illuminated by the illumination device is provided. The apparatus has a first polarization device in a beam path between a light source of the illumination device and the inner base wall in such a way that the radiation reaching the inner base wall is polarized, wherein the illumination device being designed in such a way that a predominant proportion of the radiation irradiated into the container by the illumination device reaches the inner base wall.

Provided is a light detection and ranging (LiDAR)-based inspection device including an ultrafast pulse source configured to generate a first ultrafast pulse and a second ultrafast pulse each having a pulse width ranging from 1 fs to 100 fs, a stage configured to generate a gating signal by adjusting a distance of flight of the first ultrafast pulse, a dispersing device configured to generate a chirp signal, based on the second ultrafast pulse reflected from a specimen, the chirp signal including a plurality of pulses having different wavelengths, a nonlinear optical generator configured to generate a nonlinear optical signal based on the chirp signal and the gating signal, and a detector configured to detect the nonlinear optical signal, wherein the gating signal temporally overlaps with some of the plurality of pulses included in the chirp signal in the nonlinear optical generator.