Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

A device for an MeV-based ion beam analysis of a sample includes a vacuum measurement chamber, having at least one detector and a sample observation unit, a vacuum system for generating a vacuum within the vacuum measurement chamber, and an ion beam tube and a focusing system for focusing an ion beam. The device further includes a sample transfer system, comprising a sample manipulator including a sample holder for receiving at least one sample. The device additionally includes an in-coupling system for the vacuum-tight connection of the ion beam tube to the measurement chamber, which comprises an ion beam vacuum feedthrough, at least one receiver for a detector, a receiver for receiving the sample observation unit, and a receiver for receiving the sample transfer system. The in-coupling system represents a direct mechanical connection between the components that are the ion lens system, detector and sample observation unit.

A device for an MeV-based ion beam analysis of a sample includes a vacuum measurement chamber, having at least one detector and a sample observation unit, a vacuum system for generating a vacuum within the vacuum measurement chamber, and an ion beam tube and a focusing system for focusing an ion beam. The device further includes a sample transfer system, comprising a sample manipulator including a sample holder for receiving at least one sample. The device additionally includes an in-coupling system for the vacuum-tight connection of the ion beam tube to the measurement chamber, which comprises an ion beam vacuum feedthrough, at least one receiver for a detector, a receiver for receiving the sample observation unit, and a receiver for receiving the sample transfer system. The in-coupling system represents a direct mechanical connection between the components that are the ion lens system, detector and sample observation unit.

A spectroscopy method and system, the method comprising irradiating an object with a laser-accelerated particle beam and detecting photons emitted by the object as a result of the interaction between the laser-accelerated particle beam and the object. The system comprises a laser; a particle source, positioned at a distance from the object; and a spectrometer and a detector; wherein the particle source generates a laser-accelerated particle beam under irradiation by the laser; and the spectrometer and the detector detect photons emitted from the object under irradiation by the laser-accelerated particle beam.

A spectroscopy method and system, the method comprising irradiating an object with a laser-accelerated particle beam and detecting photons emitted by the object as a result of the interaction between the laser-accelerated particle beam and the object. The system comprises a laser; a particle source, positioned at a distance from the object; and a spectrometer and a detector; wherein the particle source generates a laser-accelerated particle beam under irradiation by the laser; and the spectrometer and the detector detect photons emitted from the object under irradiation by the laser-accelerated particle beam.

A composition analysis method includes iteratively irradiating a sample with an ion beam, irradiating a specific portion of the sample that is thinned by the irradiation of the ion beam with an electron beam, and detecting an intensity of an X-ray generated from the sample by the irradiation of the electron beam. The method further includes determining an identity of an element included in the sample based on at least one detection result obtained in the iterative process.

A composition analysis method includes iteratively irradiating a sample with an ion beam, irradiating a specific portion of the sample that is thinned by the irradiation of the ion beam with an electron beam, and detecting an intensity of an X-ray generated from the sample by the irradiation of the electron beam. The method further includes determining an identity of an element included in the sample based on at least one detection result obtained in the iterative process.

Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

Practical implementation of Particle-Induced X-ray Emission (PIXE) on a focused ion beam apparatus or on a dual-beam apparatus comprising both focused-ion beam and scanning microscopy capabilities is described. Accordingly, an analytical method comprises: directing and focusing a beam of ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and detecting and measuring X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample.