A gas sensing device includes chemoresistive gas sensing elements, wherein a material composition of a first chemoresistive gas sensing element is similar to a material composition of a second chemoresistive gas sensing element, wherein the first chemoresistive gas sensing element is exposed to an ambient mixture of gases so that first sensing signals depend on a concentration of a first gas and on a concentration of a second gas, wherein the gas sensing device includes a gas filter so that the second sensing signals depend on the concentration of the first gas to a lesser degree than the first sensor signals and so that the second sensing signals depend on the concentration of the second gas, and wherein the gas sensing device estimates the concentration of the first gas and/or the concentration of the second gas based on the first sensing signals and the second sensing signals.

According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.

A gas detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a light-emitting element, a particle-sensing element, a gas-sensing element, a driving-chip element and an encapsulation layer. The driving-chip element controls driving operations of the microelectromechanical element, the light-emitting element, the particle-sensing element and the gas-sensing element, respectively. When the microelectromechanical element is enabled to actuate transportation of gas, the gas is introduced into the gas detection device through an inlet aperture of the substrate. Scattered light spots generated by the light beam of the light-emitting element irradiating on suspended particles contained in the gas are received by the particle-sensing element to generate a detection datum of the suspended particles. The gas-sensing element detects the gas passing through and generates a detection datum of hazardous gas contained in the gas. Finally, the gas is discharged from an outlet aperture of the encapsulation layer.

Systems of electrical devices with high-resolution components and methods of fabricating the electrical devices using micro-molding processes are described. Small foot print electrical devices can be achieved by fabricating components with highly conductive materials, and with closely spaced components.

A sensor system in a package, comprising: a package, the package including: a sensor chip comprising sensor array comprising a plurality of sensing elements, wherein each of the plurality of sensing elements are functionalized with a deposited mixture consisting of hybrid nanostructures and a molecular formulation specifically targeting at least one of a plurality of gases, and wherein each of the plurality of sensing elements comprises a resistance and a capacitance, and wherein at least one resistance and capacitance are altered when the interacting with gaseous chemical compounds; and a mixed signal System on a Chip (SoC), comprising an analog signal conditioning and Analog-to-Digital conversion circuit configured to convert the analog signal into a digital signal, and a low-power processor circuit configured to processes the digital signal using a pattern recognition system implementing gas detection and measurement algorithms.

A gas sensor comprises a set of one or more sensor cells (SC) and a substrate (1). Each sensor cell (SC) of the set comprises a sensitive film (42) built from a sensitive material (4) covering an area of the substrate (1). One or more elevated structures (2) are manufactured in or around said area for preventing the sensitive material (4) to expand when being applied thereto.

In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.

A method for manufacturing an electronic component includes providing a substrate and a functional layer supported by the substrate; forming a structured protection layer on a side of the substrate to which the functional layer is attached, wherein the structured protection layer has a recess so that a portion of the functional layer is exposed; applying a dispersion comprising a solvent and electrically conductive components to the exposed portion of the functional layer so that the recess is at least partially filled with the dispersion; drying the dispersion in order to create an electrically conductive layer; and removing the structured protection layer.

It is proposed a sensor for measuring a gas property, wherein the sensor comprises a semiconductor die, wherein the semiconductor die comprises a reference cavity and a measuring cavity, wherein a reference sensor element is arranged in the reference cavity, wherein a measuring sensor element is arranged in the measuring cavity, wherein the reference cavity is sealed from ambient gas, wherein the measuring cavity is fluidly connected to ambient gas. Further it is proposed a method for manufacturing such a sensor.

A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO.sub.2-patterned portion, and a second Pt-patterned portion on the second TiO.sub.2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO.sub.2 layer formed on the IMD layer, a first TiO.sub.2-patterned portion and a first Pt-patterned portion.