A gas sensing method and a gas sensing system are provided. The gas sensing method includes using a gas sensing device to sense a target gas, the gas sensing device having a self-heating region capable of producing a change in resistance in response to the target gas being sensed by the gas sensing device, and controlling a change in supply of current or voltage to the gas sensing device according to the change in resistance, so that the gas sensing device is substantially maintained operating at a predetermined temperature for sensing the target gas.

The present invention concerns vacuum pressure gauge or gas pressure measurement device comprising a polar semiconductor structure, at least one light source for illuminating a surface of the polar semiconductor structure, measurement means configured to measure a value representing a gas adsorption rate or a change in gas adsorption rate on the surface of the polar semiconductor structure, comparison means configured to compare said measured value with at least one predetermined setpoint value representing a balance between photoinduced desorption and gas adsorption on the surface of the polar semiconductor structure and control means configured to change an optical output power of the light source to match or substantially match said measured value with said setpoint value.

A sensor device includes a first electrode and a second electrode disposed over a substrate, and a sensitive film including a base film which couples the first electrode and the second electrode to each other and contains Cu and a halogen element and PEDOT/PSS which bonds to the base film.

An electronic device for sensing a target analyte in a gas, liquid or vapor sample, the device has at least two sensing elements, each sensing element having an exposed layer of a transduction material supported on a dielectric substrate. The dielectric substrate of at least one of the sensing elements is made of a different dielectric material than the dielectric substrate of at least one other of the sensing elements. The different dielectric materials providing a different sensing response according to one or more transduction modes. The plurality of sensing elements in the device yield a specific transduction pattern for a specific target analyte in a gas, liquid or vapor sample.

Disclosed herein are p-n metal oxide semiconductor (MOS) heterostructure-based sensors and systems. The sensors and systems described herein can include sensing element that comprises a first region comprising a p-type MOS material (e.g., NiO) and a second region comprising an n-type MOS material (e.g., In.sub.2O.sub.3). These sensors and systems can exhibit sensitivity and selectivity to NH.sub.3 at ppb levels, while discriminating against CO, NO, or a combination thereof at concentrations a thousand-fold higher (ppm) and spread over a considerable range (0-20 ppm). These sensors and systems can be used to detect and/or quantify NH.sub.3 in samples, including biological samples (e.g., breath samples) and combustion gases.

The MEMS type semiconductor gas detection element of the invention is a MEMS type semiconductor gas detection element 1 having a MEMS structure, for detecting hydrogen gas, comprising: a substrate 2; a gas sensitive portion 3 mainly made of a metal oxide semiconductor and provided to the substrate 2; a heating portion 4 for heating the gas sensitive portion 3; an inactive film 5 having hydrogen-permselective and formed outside the gas sensitive portion 3; a protective film 6 formed outside the inactive film 5, for suppressing deterioration of the gas sensitive portion 3.

An electricity measuring type surface plasmon resonance sensor including: a plasmon polariton intensifying sensor chip in which a prism and a sensor chip including a transparent electrode, an n-type transparent semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the transparent electrode, the n-type transparent semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the transparent electrode and the plasmon resonance film electrode.

The present invention provides device for profiling a biological sample with at least one RNA segment comprising: a metal wire positioned relative to the biological sample such that the sample and the metal wire form a Schottky barrier junction; a bias voltage provider adapted for rectifying the Schottky junction; and; a module for collecting the current over voltage profile of the Schottky junction.

In some embodiments, a microelectronic sensor includes an open-gate pseudo-conductive high-electron mobility transistor and used for air quality monitoring. The transistor comprises a substrate, on which a multilayer hetero-junction structure is deposited. This hetero-junction structure comprises a buffer layer and a barrier layer, both grown from III-V single-crystalline or polycrystalline semiconductor materials. A two-dimensional electron gas (2DEG) conducting channel is formed at the interface between the buffer and barrier layers and provides electron current in the system between source and drain electrodes. The source and drain contacts are non-ohmic (capacitively-coupled) and connected to the formed 2DEG channel and to the electrical metallizations, the latter are placed on top of the transistor and connect it to the sensor system. The metal gate electrode is placed between the source and drain areas on or above the barrier layer, which may be recessed or grown to a specific thickness. An optional dielectric layer is deposited on top of the barrier layer.

Disclosed herein are tritium detection devices and methods of making and use thereof. For example, disclosed herein are tritium detection devices comprising: a tritium detection region comprising a tritium absorption layer and an anti-diffusion layer; a Schottky contact region comprising a Schottky contact layer; a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor; an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor; and an Ohmic contact layer.