A gas sensing method and a gas sensing system are provided. The gas sensing method includes using a gas sensing device to sense a target gas, the gas sensing device having a self-heating region capable of producing a change in resistance in response to the target gas being sensed by the gas sensing device, and controlling a change in supply of current or voltage to the gas sensing device according to the change in resistance, so that the gas sensing device is substantially maintained operating at a predetermined temperature for sensing the target gas.

A method for manufacturing a gas sensor may be provided, the method comprising the steps of: preparing a porous base substrate; providing, on the porous base substarte, a source solution having graphene dispersed in a base solvent; manufacturing a graphene-impregnated base substrate by means of a driving process; and forming a first electrode and a second electrode on the graphene-impregnated base substrate.

The present inventive concept relates to a battery-free gas sensor or humidity sensor comprising a metal-organic framework and a method of manufacturing the same. In a photodiode-type battery-free gas sensor or humidity sensor according to the present inventive concept, since photoelectron collection electrodes are formed at certain intervals between P-N junction layers, when gas is adsorbed thereon, the gas can be detected without an extra power source by change of photocurrent. Due to fine pores of the metal-organic framework, gas sensitivity may be increased and stability of catalysts may be improved. When catalysts are not provided, humidity may be detected. Therefore, a system that used the photodiode-type battery-free gas sensor and the photodiode-type battery-free humidity sensor together may be performed humidity correction to accurately measure an amount of a gas.

A gas sensor containing counter electrodes and a semiconductor nanowire 4 disposed between the counter electrodes 2, 3, wherein the semiconductor nanowire 4 is in a state where light can be irradiated, which sensor measures changes in the electric current associated with adsorption of a gas to the semiconductor nanowire 4, wherein the electric current is generated by irradiation of light on the semiconductor nanowire with a voltage applied to the counter electrodes 2, 3.

The present description provides a gas sensor, a method for manufacturing the same and a detection device. The gas sensor includes: an insulation substrate, a gas sensitive element, a first electrode and a second electrode. The gas sensitive element is disposed on the insulation substrate and has a three-dimensional nano network structure. The first electrode and the second electrode are located on opposite sides of the gas sensitive element.

Miniature resistive gas detectors incorporate thin films that can selectively identify specific gases when heated to certain characteristic temperatures. A solid state gas sensor module is disclosed that includes a gas sensor, a heater, and a temperature sensor, stacked over an insulating recess. The insulating recess is partially filled with a support material that provides structural integrity. The solid state gas sensor module can be integrated on top of an ASIC on a common substrate. With sufficient thermal insulation, such a gas detector can be provided as a low-power component of mobile electronic devices such as smart phones. A method of operating a multi-sensor array allows detection of relative concentrations of different gas species by either using dedicated sensors, or by thermally tuning the sensors to monitor different gas species.

A sensor for detecting and measuring a gas in a gaseous environment where the gaseous environment contains an interferent such as a related gas. A vertical chemiresistor with a top gate includes a semiconductor layer that has a bulk resistivity that changes in the presence of the gas and/or the interferent. The electrodes (103, 107) of the vertical chemiresistor have a work function that changes when the gas is absorbed onto the electrode. This absorption changes the work function of the electrode and thereby the contact resistance of the electrode in the vertical chemiresistor. By detecting changes in the contact resistance and the bulk resistivity of the semiconducting layer (105) the presence and the concentration of the gas may be determined and distinguished from the interferent.

A gas sensor system is made up of a first gas sensor that is sensitive to both a target gas (200) and a secondary gas and a second sensor (300) that is only sensitive to the target gas. The response of the two gas sensors is processed to detect a presence of or a concentration of the target gas. The first sensor includes a semiconductor material that is sensitive to the presence of both the target and the secondary gas and electrodes that are sensitive to the presence of the target gas. The second sensor includes a semiconductor material that is sensitive to the presence of both the target and the secondary gas, but also includes a blocking layer on a surface of at least one of the electrodes that prevents the second gas interacting with the electrodes.

Systems, methods, and other embodiments associated with gas detecting sensors. According to one embodiment, a gas sensor includes a metal layer, a barrier interlayer, a substrate layer, a first insulating layer, a conduction path, a contact pad, and a second insulating layer. The conduction path connects the metal layer to the contact pad. The second insulating layer prevents diffusion through the contact pad, the conduction path, or the metal layer. The sensor includes a wire bonded electrical connection to the contact pad such that voltage can be determined and/or applied.

An electricity measuring type surface plasmon resonance sensor including: a plasmon polariton intensifying sensor chip in which a prism and a sensor chip including a transparent electrode, an n-type transparent semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the transparent electrode, the n-type transparent semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the transparent electrode and the plasmon resonance film electrode.