A sensor is disclosed. The sensor according to an embodiment of the present invention may include a substrate; a first electrode pattern disposed on one side of the substrate to form a layer; a second electrode pattern disposed on the one side of the substrate to form a layer and separated from the first electrode pattern; a sensing layer located on the one side of the substrate and covering the first electrode pattern and the second electrode pattern and containing a semiconductor; a protective layer located on the one side of the substrate and covering at least a part of the sensing layer, and containing a material different from that of the sensing layer; a first electrode pad disposed on the one side of the substrate to form a layer and electrically connected to the first electrode pattern; a second electrode pad disposed on the one side of the substrate and electrically connected to the second electrode pattern; and a housing accommodating the substrate and including a filter spaced apart from the substrate, wherein the substrate includes an opening formed adjacent to an outer boundary of the first and second electrode patterns.

An embodiment contact combustion type hydrogen sensor includes a substrate including silicon, lamination layers disposed over a top surface of the substrate and including a first thin oxide layer and a first thin nitride layer, a heater over the lamination layers, the heater including a connecting part electrically connected to a predetermined part and a heating part configured to be heated in response to power being applied, insulating layers covering a top surface of the heater and configured to perform an insulating operation, the insulating layers including a second thin oxide layer and a second thin nitride layer, a platinum catalyst over the insulating layers and configured to be heated by the heater to perform a hydrogen reaction, and a slit outside the heating part and passing through the substrate and the lamination layers.

An embodiment contact combustion type hydrogen sensor includes a substrate including silicon, lamination layers disposed over a top surface of the substrate and including a first thin oxide layer and a first thin nitride layer, a heater over the lamination layers, the heater including a connecting part electrically connected to a predetermined part and a heating part configured to be heated in response to power being applied, insulating layers covering a top surface of the heater and configured to perform an insulating operation, the insulating layers including a second thin oxide layer and a second thin nitride layer, a platinum catalyst over the insulating layers and configured to be heated by the heater to perform a hydrogen reaction, and a slit outside the heating part and passing through the substrate and the lamination layers.

The gas measurement device includes a catalyst member connected to a power source applying voltage or current, performing a reaction of a first gas and a second gas contained in a mixed gas contacted with the catalyst member to generate a third gas, and exhibiting a catalytic action in which the reaction changes in response to temperature, and a gas sensor configured to detect gas molecules contacted with the catalyst member.

Methods and systems are disclosed in which metal oxide composition electrical resistance is measured in a plurality of sensors to detect flammable or reducing compounds wherein at least one of the plurality of sensors is operated at a temperature or includes a metal oxide composition that is different than a respective temperature or metal oxide composition of another of the plurality of sensors.

Methods and systems are disclosed in which metal oxide composition electrical resistance is measured in a plurality of sensors to detect flammable or reducing compounds wherein at least one of the plurality of sensors is operated at a temperature or includes a metal oxide composition that is different than a respective temperature or metal oxide composition of another of the plurality of sensors.

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface opposed to each other, and a porous metal oxide film on a side of the first main surface of the semiconductor substrate, the porous metal oxide film having a plurality of pores. The semiconductor substrate has a connection electrically connected to the porous metal oxide film, and the semiconductor substrate is configured to provide a power supply path from the second main surface to the connection on the first main surface.

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface opposed to each other, and a porous metal oxide film on a side of the first main surface of the semiconductor substrate, the porous metal oxide film having a plurality of pores. The semiconductor substrate has a connection electrically connected to the porous metal oxide film, and the semiconductor substrate is configured to provide a power supply path from the second main surface to the connection on the first main surface.

Sensors and methods for detecting combustible gases in a gas mixture are disclosed based on combustion catalyst compositions comprising an amount of a precious metal supported on an ion-exchangeable alkali metal titanate substrate. The sensors and methods are particularly useful for measuring the concentration of combustible gases in low temperature and high humidity conditions. Advantageously, certain embodiments can selectively measure the concentration of select species (e.g. ethylene).

Sensors and methods for detecting combustible gases in a gas mixture are disclosed based on combustion catalyst compositions comprising an amount of a precious metal supported on an ion-exchangeable alkali metal titanate substrate. The sensors and methods are particularly useful for measuring the concentration of combustible gases in low temperature and high humidity conditions. Advantageously, certain embodiments can selectively measure the concentration of select species (e.g. ethylene).