A radio frequency identification (RFID) tag includes a power harvesting circuit that operates generate power for the RFID tag from a continuous wave of a radio frequency (RF) signal. The RFID tag further includes a tuning circuit that is tuned based on a capacitance setting, where the capacitance setting is indicative of a power level of the power. The RFID tag further includes a processing module operably coupled to the tuning circuit, where the processing module operates to generate the capacitance setting to obtain a desired power level for the power.

A moisture sensor comprises a carrier element comprises an insulating material, a first and a second electrode structure at a distance from one another at the carrier element, a moisture-sensitive, dielectric layer element at a first main surface region of the carrier element and adjacent to the first and second electrode structures and a third electrode structure on a first main surface region of the moisture-sensitive, dielectric layer element, such that the moisture-sensitive, dielectric layer element is between the third electrode structure and the first electrode structure and between the third electrode structure and the second electrode structure. The first electrode structure is a first capacitor electrode and the second electrode structure is a second capacitor electrode of a measurement capacitor for capacitive moisture measurement, wherein the third electrode structure is a floating electrode structure.

A capacitive vapor sensor, sensor system, and method for determining a vapor concentration is provided. The capacitive sensor includes a first electrode and a second electrode. The first and second electrodes are configured to provide a bias voltage. The sensor further includes a cantilevered sensor electrode interdigitated between the first and second electrodes and having an adsorptive polymer attached to a surface of the cantilevered sensor electrode. The adsorptive polymer is configured to expand in response to adsorbing a vapor and cause a deflection of the cantilevered sensor electrode, the deflection causing a change in a differential capacitance of the first and second electrodes. A sensor indicates current at the cantilevered sensor electrode, and an electronic processor determines the change in the differential capacitance to determine a characteristic or concentration of the vapor.

A method of moisture detection and estimation in an absorbent article with use of multiple frequencies is provide that comprises: applying, by capacitive coupling, drive signal of multiple frequencies to a drive electrode in the absorbent article; sensing, by capacitive coupling, sense signal of the multiple frequencies from a sense electrode in the absorbent article; detecting the first wetness event in the absorbent article with use of sense signal of a frequency of the multiple frequencies; and detecting the saturation of the absorbent article with use of sense signal of another frequency of the multiple frequencies.

The disclosed subject matter relates generally to methods of forming a semiconductor device, such as a moisture sensor. More particularly, the present disclosure relates to a method of forming a sensor device and a bond pad in the same dielectric region. The present disclosure also relates to the semiconductor devices formed by the method disclosed herein.

According to one embodiment, a sensor includes a first sensor part. The first sensor part includes a first electrode, a first counter electrode, and a first intermediate layer located between the first electrode and the first counter electrode. The first counter electrode includes a first electrode side surface. The first electrode side surface crosses a first cross direction. The first cross direction crosses a first direction from the first electrode toward the first counter electrode. The first intermediate layer includes a first intermediate layer side surface. The first intermediate layer side surface crosses the first cross direction. The first intermediate layer side surface is recessed when referenced to the first electrode side surface.

A humidity sensor includes a semiconductor substrate, an insulating film, an interconnect layer formed above the semiconductor substrate via the insulating film, a protective film that covers the interconnect layer, a moisture sensitive film formed above the protective film, and a metal oxide film formed between the protective film and the moisture sensitive film.

A sensor includes a substrate, a reference electrode provided above the substrate, a lower electrode provided above the reference electrode via an insulating film, and an upper electrode provided above the lower electrode via a physical quantity detecting film. The upper electrode and the lower electrode form a parallel-plate-type detection capacitor, and the lower electrode and the reference electrode form a parallel-plate-type reference capacitor.

A humidity meter includes a humidity sensor, a heating device oriented towards the humidity sensor, a signal generator capable of modulating a power output of the heating device, and a lock-in amplifier capable of demodulating a response signal of the humidity sensor as induced by the modulated heating device. A method of measuring humidity includes the steps of providing a humidity sensor positioned along a channel, a heating device positioned opposite the humidity sensor along the channel, and a controller including a signal generator and a lock-in amplifier; providing an airflow along the channel; modulating a power supply to the heating device using the signal generator; and demodulating a response signal of the humidity sensor induced by the modulated heating device.

A sensor includes a substrate, a reference electrode provided above the substrate, a lower electrode provided above the reference electrode via an insulating film, and an upper electrode provided above the lower electrode via a physical quantity detecting film. The upper electrode and the lower electrode form a parallel-plate-type detection capacitor, and the lower electrode and the reference electrode form a parallel-plate-type reference capacitor.