Patent classifications
G01N27/4145
NANOPORE FORMING METHOD AND USES THEREOF
The invention relates to a method for making nanopores in thin layers or monolayers of transition metal dichalcogenides that enables accurate and controllable formation of pore within those thin layer(s) with sub-nanometer precision.
INTEGRATED CIRCUIT WITH BIOFETS
An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.
BIOSENSOR
A biosensor system includes an array of biosensors with a plurality of electrodes situated proximate the biosensor. A controller is configured to selectively energize the plurality of electrodes to generate a DEP force to selectively position a test sample relative to the array of biosensors.
Systems and methods for single-molecule nucleic-acid assay platforms
Integrated circuits for a single-molecule nucleic-acid assay platform, and methods for making such circuits are disclosed. In one example, a method includes transferring one or more carbon nanotubes to a complementary metal-oxide semiconductor (CMOS) substrate, and forming a pair of post-processed electrodes on the substrate proximate opposing ends of the one or more carbon nanotubes.
Methods for manufacturing well structures for low-noise chemical sensors
In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.
FIELD EFFECT TRANSISTOR AND SENSOR USING SAME
A field effect transistor and a sensor using the field effect transistor is provided. The field effect transistor can be manufactured so as to have uniform properties by simple steps at low costs, and can stably detect, when used as a sensor, a very small amount of analyte with a high sensitivity while the properties are hardly deteriorated. A channel of the field effect transistor is constituted by a single-walled carbon nanotube thin film that is grown, by a chemical vapor deposition method, using particles of a nonmetallic material as growth nuclei, the nonmetallic material containing 500 mass ppm or less metallic impurities that contain a metal and its compounds.
BIOSENSOR FOR ELECTRICAL DETECTION OF A NUCLEOTIDE SEQUENCE
The present invention relates generally to the field of microelectronics, and more particularly to a structure and method of forming a biosensor having a nucleotide attracting surface formed to reduce false detection of nucleotides and enabling electrical detection of nucleotides. The biosensor may include an analyte-affinity layer on an upper surface of a substrate. A conductive layer may extend a length of the substrate below and in contact with the analyte-affinity layer. The conductive layer may be electrically connected to one or more transistors. The analyte-affinity layer may have dimensions tailored for a target analyte. A distance between a first analyte-affinity layer and a second analyte-affinity layer may range from approximately 50% of a length of a target analyte to approximately 300% of a length of a target analyte. The analyte-affinity layer may have an upper surface with a diameter ranging from approximately 3 nm to approximately 20 nm.
GRAPHENE-BASED NANOSENSOR FOR IDENTIFYING TARGET ANALYTES
A microdevice for monitoring a target analyte is provided. The microdevice can include a field effect transistor comprising a substrate, a gate electrode, and a microfluidic channel including graphene. The microfluidic channel can be formed between drain electrodes and source electrodes on the substrate. The microdevice can also include at least one aptamer functionalized on a surface of the graphene. The at least one aptamer can be adapted for binding to the target analyte. Binding of the target analyte to the at least one aptamer can alter the conductance of the graphene.
DEVICES WITH FIELD EFFECT TRANSISTORS
Devices and methods of using the devices are disclosed which can provide scalability, improved sensitivity and reduced noise for sequencing polynucleotide. Examples of the devices include a biological or solid-state nanopore, a field effect transistor (FET) sensor with improved gate controllability over the channel, and a porous structure.
SEMICONDUCTOR SENSOR
A semiconductor sensor includes an insulating substrate, a semiconductor sheet on the insulating substrate and including graphene or carbon nanotubes, a source electrode and a drain electrode, each being provided on the insulating substrate and electrically coupled to the semiconductor sheet, an oxide film extending over a surface of the semiconductor sheet and including silica, alumina, or a composite oxide of silica and alumina, and a receptor at a surface of the oxide film.