Patent classifications
G01N27/4146
NANOSCALE SENSOR, SYSTEM TO MANUFACTURE THE SENSOR, AND METHOD TO MANUFACTURE THE SENSOR
A nanoscale sensor, and method to manufacture the sensor. The sensor is designed to measure the change in free carriers from analyte detection by measuring current with an applied bias across the nano-wire(s) in a tested aqueous solution. The measured current is compared to known calibrated concentrations of the tested characteristic bacterium, virus, chemical, gas, or some combination thereof and a value for the tested aqueous solution. Temperature, pH and salinity measuring circuits are included to enable environmental correction.
Systems and methods for single-molecule nucleic-acid assay platforms
Integrated circuits for a single-molecule nucleic-acid assay platform, and methods for making such circuits are disclosed. In one example, a method includes transferring one or more carbon nanotubes to a complementary metal-oxide semiconductor (CMOS) substrate, and forming a pair of post-processed electrodes on the substrate proximate opposing ends of the one or more carbon nanotubes.
GRAPHENE-BASED NANOSENSOR FOR IDENTIFYING TARGET ANALYTES
A microdevice for monitoring a target analyte is provided. The microdevice can include a field effect transistor comprising a substrate, a gate electrode, and a microfluidic channel including graphene. The microfluidic channel can be formed between drain electrodes and source electrodes on the substrate. The microdevice can also include at least one aptamer functionalized on a surface of the graphene. The at least one aptamer can be adapted for binding to the target analyte. Binding of the target analyte to the at least one aptamer can alter the conductance of the graphene.
DEVICES WITH FIELD EFFECT TRANSISTORS
Devices and methods of using the devices are disclosed which can provide scalability, improved sensitivity and reduced noise for sequencing polynucleotide. Examples of the devices include a biological or solid-state nanopore, a field effect transistor (FET) sensor with improved gate controllability over the channel, and a porous structure.
SEMICONDUCTOR SENSOR
A semiconductor sensor includes an insulating substrate, a semiconductor sheet on the insulating substrate and including graphene or carbon nanotubes, a source electrode and a drain electrode, each being provided on the insulating substrate and electrically coupled to the semiconductor sheet, an oxide film extending over a surface of the semiconductor sheet and including silica, alumina, or a composite oxide of silica and alumina, and a receptor at a surface of the oxide film.
Integrated circuit FLUID sensor
In some examples, an integrated circuit comprises: a semiconductor die including a semiconductor substrate, a dielectric layer on the semiconductor substrate, and a metallization structure encapsulated in the dielectric layer, in which the semiconductor substrate includes a transistor having a first current terminal, a second current terminal, and a channel region between the first and second current terminals, and the dielectric layer has a sensing side facing away from the semiconductor substrate; an insulation layer on the sensing side; a sensor terminal on the sensing side and over the channel region; and a restriction structure including an opening and a rigid silicon-based fluidic structure, in which the silicon-based fluidic structure is on the sensing side and encapsulates a fluid cavity on the sensing side, the sensor terminal is in the fluid cavity, and the restriction structure is configured to transport a fluid by microfluidic diffusion.
Method for manufacturing a fluid sensor device and a fluid sensor device
According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET arrangement.
SENSOR ARRANGEMENT FOR SIMULTANEOUS MEASUREMENT OF OPTICAL AND ELECTRICAL PROPERTIES
A sensor arrangement performs simultaneous measurement of optical and electrical properties of a dielectric medium to be investigated, as well as the analytes contained therein. The arrangement contains a field-effect transistor and a surface plasmon resonance sensor. The sensor arrangement further contains a sample chamber for receiving the dielectric medium, which sample chamber is arranged such that the optical and electrical properties of the dielectric medium can be recorded simultaneously. The gate electrode of the field-effect transistor forms the active surface and/or is connected to the active surface of the surface plasmon resonance sensor, and has charge carriers which can be caused to oscillate by use of electromagnetic radiation.
DETECTION DEVICE AND METHOD FOR CORONAVIRUS AND INFLUENZA VIRUS
The present application is related to a detection device and method for coronavirus and influenza virus. The device comprises a detection module (20), a signal processing circuit (30), a controller (40), a displayer (50), a digital-to-analog conversion circuit (60), and a clock (70). Noticeably, the detection module (20) comprises a sample cell, and a transistor sensor combination integrated in the sample cell and used for measuring different targets. The detection module (20) may comprise a sample cell array to realize simultaneous detection of a plurality of samples to be detected. The detection method comprises the following steps: adding a sample to be detected into a sample cell, reading an electrical signal response of each transistor sensor in the sample cell to judge whether the sample to be detected contains a virus to be detected or not. The present application belongs to the technical field of biological detection.
Carbon nanotube biofet with a local amplifier in a system array for analysis of biomarkers and method of analysis of same
A bioFET cell for measuring a time dependent characteristic of an analyte bearing fluid includes a source, a drain, a semiconductive single wall carbon nanotube network layer extending between the source and drain electrodes and electrically coupled there between, a gate insulatively spaced from and disposed over and extending between the source and drain electrodes, a layer of at least one selected antibody disposed on and linked to the polymer layer to functionalize the semiconductive single wall carbon nanotube network layer to a selected target biomarker corresponding to the at least one selected antibody so that electron transport into the semiconductive single wall carbon nanotube network layer is facilitated, where the source, drain and gate electrodes with the carbon nanotube network layer form a defined channel through which the analyte bearing fluid may flow, and a high impedance source follower amplifier coupled to the source electrode.