A sample preprocessing device 2 is to preprocess a sample (W) analyzed by a analysis device 3 by applying heat to the sample, and comprises a heating furnace 4 that applies heat to the sample (W), a discharging port 2P2 from which the sample (W) heated by the heating furnace 4 is discharged by dropping the sample (W), and a posture restriction unit (PR) that restricts a posture of the sample (W) that drops in the discharging port 2P2.

The present application concerns in-situ intrusive probe systems and methods. The probe systems described herein can be installed flush to a hydrocarbon containing structure, such as a pipeline, vessel, or other piping system carrying crude, gas or sour products. The probe systems include hydrogen induced cracking (HIC)-resistant microstructure such that as atomic hydrogen permeates the probe surface, the probe captures recombined hydrogen gas. The pressure of the resultant hydrogen gas buildup is measured and predictions as to the HIC activity of that area can be made.

An objective of this invention is to conduct an accurate quantitative analysis on the Ar element contained in a sample gas by an element analysis device comprising a heating furnace and a mass spectrometer for conducting a quantitative analysis on an element in a vacuum atmosphere. The element analysis device comprises: a heating furnace that heats a graphite crucible containing a sample while introducing a carrier gas into the heating furnace, thereby vaporizing the sample to generate a sample gas; a quadrupole mass spectrometer that conducts the quantitative analysis on the Ar element contained in the sample gas in a mixed gas comprising the carrier gas and the sample gas discharged from the heating furnace, a first pressure regulator that controls the pressure of the carrier gas to be introduced into the heating furnace, and a second pressure regulator that controls the pressure of the mixed gas discharged from the heating furnace.

An objective of this invention is to conduct an accurate quantitative analysis on the Ar element contained in a sample gas by an element analysis device comprising a heating furnace and a mass spectrometer for conducting a quantitative analysis on an element in a vacuum atmosphere. The element analysis device comprises: a heating furnace that heats a graphite crucible containing a sample while introducing a carrier gas into the heating furnace, thereby vaporizing the sample to generate a sample gas; a quadrupole mass spectrometer that conducts the quantitative analysis on the Ar element contained in the sample gas in a mixed gas comprising the carrier gas and the sample gas discharged from the heating furnace, a first pressure regulator that controls the pressure of the carrier gas to be introduced into the heating furnace, and a second pressure regulator that controls the pressure of the mixed gas discharged from the heating furnace.

Embodiments of the disclosure generally relate to a system, apparatus and method for testing a coating over a semiconductor chamber component. In one embodiment, a test station comprises a hollow tube, a sensor coupled to a top end of the tube and a processing system communicatively coupled to the sensor. The hollow tube has an open bottom end configured for sealingly engaging a coating layer of the semiconductor chamber component. The sensor is configured to detect the presence of a gaseous byproduct of a reaction between a reagent disposed in the hollow tube and a base layer disposed under the coating layer. The processing system is configured to determine exposure of the base layer through the coating layer in response to information about the presence of the gaseous byproduct. In another embodiment, the processing system is communicatively coupled to each sensor of a plurality of test stations.

Embodiments of the disclosure generally relate to a system, apparatus and method for testing a coating over a semiconductor chamber component. In one embodiment, a test station comprises a hollow tube, a sensor coupled to a top end of the tube and a processing system communicatively coupled to the sensor. The hollow tube has an open bottom end configured for sealingly engaging a coating layer of the semiconductor chamber component. The sensor is configured to detect the presence of a gaseous byproduct of a reaction between a reagent disposed in the hollow tube and a base layer disposed under the coating layer. The processing system is configured to determine exposure of the base layer through the coating layer in response to information about the presence of the gaseous byproduct. In another embodiment, the processing system is communicatively coupled to each sensor of a plurality of test stations.

The present application concerns in-situ intrusive probe systems and methods. The probe systems described herein can be installed flush to a hydrocarbon containing structure, such as a pipeline, vessel, or other piping system carrying crude, gas or sour products. The probe systems include hydrogen induced cracking (HIC)-resistant microstructure such that as atomic hydrogen permeates the probe surface, the probe captures recombined hydrogen gas. The pressure of the resultant hydrogen gas buildup is measured and predictions as to the HIC activity of that area can be made.

The present application concerns in-situ intrusive probe systems and methods. The probe systems described herein can be installed flush to a hydrocarbon containing structure, such as a pipeline, vessel, or other piping system carrying crude, gas or sour products. The probe systems include hydrogen induced cracking (HIC)-resistant microstructure such that as atomic hydrogen permeates the probe surface, the probe captures recombined hydrogen gas. The pressure of the resultant hydrogen gas buildup is measured and predictions as to the HIC activity of that area can be made.

Systems and methods include a predictor module configured to receive an input, e.g., composition parameters and processing parameters. A processor processes the input to predict a material property, e.g., fatigue strength, of an alloy based on the input. The processor outputs the predicted fatigue strength of the alloy for display.

Systems and methods include a predictor module configured to receive an input, e.g., composition parameters and processing parameters. A processor processes the input to predict a material property, e.g., fatigue strength, of an alloy based on the input. The processor outputs the predicted fatigue strength of the alloy for display.