Systems and methods provide a device for characterizing a thin film, including a conducting or insulating substrate, an active layer on the conducting or insulating substrate to be characterized, and a plurality of stripline electrodes on the active layer. The plurality of stripline electrodes include a pitch width of a same order as the thickness of the active layer and strip width smaller than the thickness of the active layer.

A probe card for testing power devices under high temperature and high voltage. The probe card includes air inlet system, PCB board, switching layer, guide plate and probe from top to bottom; the bottom of air inlet system includes plurality of lower air outlets and side air outlets, the PCB board includes a first through-hole with same position, shape and quantity as the lower air outlet, the switching layer includes a second through-hole with same position, shape and quantity as the lower air outlet, the guide plate includes a third through-hole with same position, shape and quantity as the lower air outlet. The lower air outlet, the first through-hole, the second through-hole and the third through-hole are coaxially arranged. The high-temperature and high-pressure gas ejected from the lower air outlet is blown between the guide plate and the tested wafer after successively passing through the first, second, and third through-holes.

A test device includes a power compensation module and a test module. The power compensation module receives AC power generated by a device under test to generate DC power to the device under test. The test module provides a plurality of test signals and a test mode to the device under test for testing the device under test.

The invention relates to a system comprising a probe and a measuring device, wherein the probe is connected to an input of the measuring device, and wherein an analog-digital converter is connected downstream of the input of the measuring device. The probe provides an analog-digital converter for the generation of a value-discrete and/or time-discrete signal from an analog input signal, wherein the value-discrete and/or time-discrete signal is supplied to the analog-digital converter of the measuring device. The invention further relates to a method for the registration of an analog signal by means of a system comprising a probe and a measuring device.

A semiconductor evaluation apparatus includes a jig for evaluation and a probe substrate. The jig for evaluation is provided such that a plurality of semiconductor devices can be placed thereon. The probe substrate is provided so as to face the jig for evaluation, and includes a contact probe. The jig for evaluation includes a plurality of housing portions divided by a frame portion such that the plurality of semiconductor devices can be separately placed on the plurality of housing portions, respectively. The semiconductor evaluation apparatus is configured such that the contact probe can be brought into contact with a plurality of elements in the state where a space is provided by bringing the frame portion and the probe substrate in proximity to each other. In this space, each of the plurality of semiconductor devices is placed between a corresponding one of the plurality of housing portions and the probe substrate.

A measurement device includes a stage for carrying an object to be measured, an insulating board having a through hole, a probe fixed on the undersurface of the insulating board, a side wall section in a shape surrounding the probe, a pressurizing section provided on the top surface of the insulating board, the pressuring section supplying a gas below the insulating board via the through hole, and a measurement section electrically connected to the probe to control the pressurizing section, wherein the measurement section measures an electric property of the object to be measured via the probe in a state where the pressurizing section is controlled to supply a gas to a measurement space located below the insulating board to increase a pressure in the measurement space, the measurement space surrounded by the stage, the side wall section, and the insulating board.

There is a need to improve estimation accuracy of a failure estimation method or its failure estimation apparatus that performs failure estimation on a targeted instrument based on history information about several instruments mounted with the same type of semiconductor device as an instrument targeted at failure estimation. A failure estimation apparatus that includes a history information database storing history information about a plurality of instruments mounted with the same type of semiconductor device and performs failure estimation on a targeted instrument mounted with a semiconductor device whose type equals the type, wherein the history information contains operation information and failure information; wherein the operation information indicates a chronological operating state of the semiconductor device mounted on the instruments; wherein the failure information indicates a failure cause of a failed instrument; and wherein the operating state is categorized into a plurality of classifications.

Provided is a current application device capable of applying a test current of a magnitude necessary for testing of a semiconductor element without any trouble. A current application device 1 is configured to have a contacting section having a plurality of projections 21 for contacting a contact region 24 inside an active region 23 of a semiconductor element 22 and applying the test current thereto, and a pressing section 3 which presses the contacting section 2 against the semiconductor element 22 such that each projection 21 contacts the contact region 24. A plurality of the projections 21 are arranged such that an arrangement density of outside projections 21 is larger than the arrangement density of inside projections 21.

A probe assembly includes a stepped insulator and a printed circuit board. The insulator is configured to surround a current carrying conductor. The printed circuit board includes a main portion and an outward protruding portion. The outward protruding portion is implemented as a voltage probe and extends outward away from the main portion and into the insulator. The printed circuit board includes a conductive element, one or more dielectric layers, and a pickup element, where the conductive element extends through the one or more dielectric layers and is connected to the pickup element, and where the pickup element is embedded in the one or more dielectric layers and disposed proximate the current carrying conductor. The printed circuit board includes signal conditioning components connected to the conductive element of the voltage probe.

A test system for high-voltage and high-current testing of power semiconductor devices comprised in a wafer which has a test machine, a needle probe card and a contacting system is provided. The contacting system has a wafer housing conductive portion and a test electrical circuit closing contact conductive portion. The test electrical circuit closing contact conductive portion has a shape and an extension to determine respective straight and continuous current conduction paths from each power semiconductor device to at least one test electrical circuit closing terminal arranged along a predetermined non-variable direction. Each current conduction path extends along a direction parallel to or coincident with the predetermined non-variable direction. A contacting system is also provided.