A method of manufacturing a semiconductor package includes covering a semiconductor die and a plurality of conductive terminals coupled to the semiconductor die in a mold compound, positioning the mold compound between a first pair of electrodes and a second pair of electrodes, and moving a movable electrode of the first pair and a movable electrode of the second pair into a first clamping position. In the first clamping position, each of the first pair of electrodes and the second pair of electrodes electrically couples to a unique subset of the plurality of conductive terminals. The method also includes applying, by the first pair of electrodes, a first voltage to the semiconductor die within the mold compound; and applying, by the second pair of electrodes, a second voltage to the semiconductor die within the mold compound. The second voltage is less than the first voltage.

A method, a non-transitory computer readable medium and a detection system for detecting an electric arc hazard related to a wafer. The detection system may include a measurement unit, an electrode and a processing unit. The measurement unit may be configured to provide a measurement result by measuring an electrical parameter of the electrode during a test period, while the wafer may be moved in relation to the electrode, and while a certain electrical field may be formed between the electrode and the wafer; wherein the certain electrical field induces detached ends of partially detached conductive elements of the wafer to move away from the wafer. The processing unit may be configured to determine an existence of the electric arc hazard based on the measurement result.

An insulation resistance measurement device includes a jig unit, a control unit and a transfer mechanism. The jig unit includes a lower jig having a reference surface, an upper jig having an abutting surface, a probe unit and a servomotor. When the upper jig is lowered toward the lower jig by the servomotor, the probe contacts a portion to be measured. When the upper jig is lowered further and the abutting surface of the upper jig abuts the reference surface, a torque of the servomotor increases. When the torque reaches a predetermined value, an insulation resistance is measured by the probe in a state where the torque is maintained.

[Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of a surface electrode or increasing the number of semiconductor devices (number of chips) to be obtained from one wafer, and a method for manufacturing the same.

[Solution Means] A semiconductor device 1 includes an n-type SiC layer 2 having a first surface 2A, a second surface 2B, and end faces 2C, a p-type voltage relaxing layer 7 formed in the SiC layer 2 so as to be exposed to the end portion of the first surface 2A of the SiC layer 2, an insulating layer 8 formed on the SiC layer 2 so as to cover the voltage relaxing layer 7, and an anode electrode 9 that is connected to the first surface 2A of the SiC layer 2 through the insulating layer 8 and has a pad area 95 selectively exposed.

There is provided a laminated sheet with which the electrical inspection of a redistribution layer formed later can be efficiently performed, while the laminated sheet is in the form of a sheet useful for the formation of a redistribution layer. This laminated sheet includes a carrier with a release function; a first electrically conductive film provided on the carrier with the release function; an insulating film provided on the first electrically conductive film; and a second electrically conductive film provided on the insulating film. The second electrically conductive film is used for formation of a redistribution layer, and the first electrically conductive film, the insulating film, and the second electrically conductive film function as a capacitor for performing electrical inspection of the redistribution layer.

[Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of a surface electrode or increasing the number of semiconductor devices (number of chips) to be obtained from one wafer, and a method for manufacturing the same. [Solution Means] A semiconductor device 1 includes an n-type SiC layer 2 having a first surface 2A, a second surface 2B, and end faces 2C, a p-type voltage relaxing layer 7 formed in the SiC layer 2 so as to be exposed to the end portion of the first surface 2A of the SiC layer 2, an insulating layer 8 formed on the SiC layer 2 so as to cover the voltage relaxing layer 7, and an anode electrode 9 that is connected to the first surface 2A of the SiC layer 2 through the insulating layer 8 and has a pad area 95 selectively exposed.

A semiconductor structure for measuring a breakdown voltage of a pn-junction, said semiconductor structure comprises: a substrate; a sensor device comprising an optical active region comprising said pn-junction in said substrate, wherein said sensor device is configured to apply a reverse bias voltage to said pn-junction; and an emitter located adjacent to said optical active region in said substrate and configured to provide charge carriers to said optical active region in order to trigger breakdown of said pn-junction when said reverse bias voltage is equal to or greater than said breakdown voltage.

An insulation resistance measurement device includes a jig unit, a control unit and a transfer mechanism. The jig unit includes a lower jig having a reference surface, an upper jig having an abutting surface, a probe unit and a servomotor. When the upper jig is lowered toward the lower jig by the servomotor, the probe contacts a portion to be measured. When the upper jig is lowered further and the abutting surface of the upper jig abuts the reference surface, a torque of the servomotor increases. When the torque reaches a predetermined value, an insulation resistance is measured by the probe in a state where the torque is maintained.

A semiconductor device is provided. The semiconductor device includes a functional circuit; a plurality of electrostatic discharge (ESD) protection circuits formed independently of the functional circuit, wherein each of the plurality of ESD protection circuits includes a plurality of junctions having different sizes and capacities, each of the plurality of ESD protection circuits is configured to perform an ESD test in different processes of fabrication of the semiconductor device; and a plurality of test pads connected to the plurality of ESD protection circuits and the functional circuit, respectively, wherein each of the plurality of test pads is configured to receive a test signal for the ESD test.

An insulating substrate inspecting method includes bringing a lower electrode into contact with lower metal of an insulating substrate including an insulating layer, the lower metal in contact with a lower surface of the insulating layer, and upper metal in contact with an upper surface of the insulating layer, and bringing an upper electrode into contact with the upper metal, and applying an AC voltage to the lower electrode and the upper electrode to detect electromagnetic waves generated at a defect in the insulating layer.