A method and system of monitoring a reliability of a semiconductor circuit are provided. A current consumption of a first ring oscillator that is in static state is measured at predetermined intervals. Each measured current consumption value is stored. A baseline current consumption value of the first ring oscillator is determined based on the stored current consumption values. A latest measured current consumption value of the first ring oscillator is compared to the baseline current consumption value. Upon determining that the latest measured current consumption value is above a threshold deviation from the baseline current consumption value, the first ring oscillator is identified to have a dielectric breakdown degradation.

An insulating substrate inspecting method includes bringing a lower electrode into contact with lower metal of an insulating substrate including an insulating layer, the lower metal in contact with a lower surface of the insulating layer, and upper metal in contact with an upper surface of the insulating layer, and bringing an upper electrode into contact with the upper metal, and applying an AC voltage to the lower electrode and the upper electrode to detect electromagnetic waves generated at a defect in the insulating layer.

A system and method for stress-testing of electronic components are disclosed. The system and method include a stationary bath including a tub that defines an aperture in a plane, in which a plurality of slots are positionable and defined inside the tub and oriented orthogonally with respect to the plane. A dielectric fluid in the tub is heated by a heating element to a predetermined temperature value. A board is configured to be retrievably placed with one of the plurality of slots, the board having a plurality of sockets operable to receive corresponding electronic components.

An exemplary apparatus includes a testing module connected to, and providing a test voltage to, an integrated circuit containing devices under test. The testing module performs a time-dependent dielectric breakdown (TDDB) test on the devices under test. A decoder is connected to the devices under test and the testing module. The decoder selectively connects each device being tested to the testing module. Efuses are connected to a different one of the devices under test. The efuses separately electrically disconnect each of the devices under test from the test voltage upon failure of a corresponding device under test. Protection circuits are connected between the efuses and a ground voltage. Each protection circuit provides a shunt around the decoder upon failure of the device under test.

There is provided a laminated sheet with which the electrical inspection of a redistribution layer formed later can be efficiently performed, while the laminated sheet is in the form of a sheet useful for the formation of a redistribution layer. This laminated sheet includes a carrier with a release function; a first electrically conductive film provided on the carrier with the release function; an insulating film provided on the first electrically conductive film; and a second electrically conductive film provided on the insulating film. The second electrically conductive film is used for formation of a redistribution layer, and the first electrically conductive film, the insulating film, and the second electrically conductive film function as a capacitor for performing electrical inspection of the redistribution layer.

The invention relates to reliable diagnostic apparatus for a switchgear which may minimize the probability of failure in diagnosing a deterioration of a switchgear. The diagnostic apparatus for a switchgear comprises a VHF sensor detecting an electromagnetic wave signal of a VHF band, which is generated by the switchgear; a UHF sensor detecting an electromagnetic wave signal of a UHF band, which is generated by the switchgear; a data acquisition unit that acquires the electromagnetic wave signals detected by the VHF sensor and the UHF sensor, and converts the electromagnetic wave signals into data indicating magnitudes of the electromagnetic wave signals; and a diagnosis unit connected with the data acquisition unit and that executes analysis including whether the data provided by the data acquisition unit is a pattern of a partial discharge signal and stores the analyzed result.

Provided are a load drive apparatus in which a semiconductor chip using DTI for inter-element separation is mounted, the load drive apparatus being capable of diagnosing a dielectric strength voltage of the DTI and highly reliable and a failure diagnosis method of the load drive apparatus. There is provided a load drive apparatus in which a semiconductor chip is mounted. The semiconductor chip includes a load drive output unit formed on a semiconductor substrate. The load drive output unit has a first region where an MOSFET that controls load driving is formed and a second region insulated and separated by DTI from the first region and includes a first leakage current detection element provided in the first region, a second leakage current detection element provided in the second region, and a failure detection unit that determines a failure of the load drive output unit.

Embodiments include a test circuit to test one or more magnetic tunnel junctions (MTJs) of a magnetic random access memory (MRAM). The test circuit may measure a 1/f noise of the MTJ in the time domain, and determine a power spectral density (PSD) of the 1/f noise. The test circuit may estimate one or more parameters of the MTJ and/or MRAM based on the PSD. For example, the test circuit may determine a noise parameter, such as a Hooge alpha parameter, based on the PSD, and may estimate the one or more parameters of the MTJ and/or MRAM based on the 1/f parameter. Other embodiments may be described and claimed.

Methods and apparatus for an integrated circuit having first and second domains with an insulative material electrically isolating the first and second domains. A conductive shield is disposed between the first and second domains and a current sensor has at least one magnetoresistive element proximate the shield to detect current flow in the shield due to breakdown of the insulative material.

The present application relates to a test circuit, comprising: M test units, each test unit having a first terminal and a second terminal, a first terminal of each test unit being connected to a power wire, a second terminal of each test unit being connected to a ground wire, M being a positive integer; each test unit comprises a TDDB test component, a switch, and a control circuit; the TDDB test component has a first equivalent resistance before being broken down, the TDDB test component has a second equivalent resistance after being broken down, and the first equivalent resistance is greater than the second equivalent resistance.