Load Pull tuning pattern and probe movement algorithms allow creating a test pattern allowing to avoid instability regions and spurious oscillations of microwave transistors during testing using slide screw load and source tuners. The impedances are selected based on the stability circle and instability area on the Smith chart and the probe movement trajectory allows both avoiding the static and circumventing the transient crossing through the instability area. All tuning commands are saved in a pattern file.

In described examples, a time-domain analyzer is arranged to generate an indication of a number of high-frequency events of an electrical monitor signal that includes a fundamental periodic frequency. The high-frequency events include frequencies higher than the fundamental periodic frequency. A frequency-domain analyzer is arranged to generate frequency band information in response to frequencies of the electrical monitor signal that are higher than the fundamental periodic frequency. A fault detector is arranged to monitor the indication of the number of high-frequency events and the generated frequency band information, and to generate a fault flag in response to the monitored indication of the number of high-frequency events and the generated frequency band information.

A new multi-carriage slide screw impedance tuner uses a circular slabline, eccentrically rotating disc probes and rotating carriages allowing reducing the linear size of the tuner by a factor of 3 compared with linear tuners. The slabline lies flat on the bench table surface and the disc probes rotate at the end of rotating arms, which act as mobile carriages, forming a planetary configuration. The rotation of the arms control the phase of GAMMA and the rotation of the disc-probes controls its amplitude.

The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.

An impedance synthesis method for single and multi-probe high resolution slide screw impedance RF and microwave tuners employs a fast calibration algorithm, which creates appropriately distributed calibration points over the Smith chart and a second order interpolation algorithm between calibration points, optimized for best suitability to the natural behavior of the tuners. The fast tuning algorithm uses a general search in order to identify the closest calibrated points, followed by a gradient search using fine interpolation grid in order to reach the final target. The method is applicable, after proper data preparation, also to double and triple probe harmonic tuners. The method allows tuning accuracy as high as 60 dB, or deviation-from-target vector distance of 0.001 units on the Smith chart, whereas absence of the fine grid interpolation typically yields accuracies of the order of 20 dB, or a deviation-from-target vector distance of 0.1 reflection factor units.