Patent classifications
G01R31/2619
Power Converting Device
By detecting a temperature abnormality of a power semiconductor by using the power semiconductor as a temperature sensor, it is possible to detect deterioration and an abnormality of elements, a drive circuit and a cooling system, prevent a failure during an operation by taking an appropriate measure in advance, and make a system operational life long. More specifically, a power converting device which includes the power semiconductor and an arithmetic operation circuit which gives a drive instruction to the power semiconductor detects the temperature abnormality of the power semiconductor based on the drive instruction of the power semiconductor and a delay time of a control drive voltage applied to the power semiconductor to protect the power converting device. The power converting device which includes the power semiconductor and the arithmetic operation circuit gives the drive instruction compares and determines a delay time of the drive instruction and a control voltage applied to the power semiconductor and a reference value, and changes at least one of the drive instruction and the drive voltage based on a result of the comparison and the determination.
METHOD AND APPARATUS FOR DETECTING AGEING OF A POWER ELECTRONIC APPARATUS COMPRISING A SEMICONDUCTOR COMPONENT, AND POWER ELECTRONIC SYSTEM
A method for detecting the aging of a power electronic device that comprises at least one semiconductor component including a step of providing of an excitation signal, which is designed to trigger a flow of an at least approximately semi-sinusoidal excitation current through the semiconductor component in order to introduce a power loss into the semiconductor component, a step of uploading a temperature signal, which represents the temporal course of the temperature of the semiconductor component, and a step of determining of an aging value that represents the aging of the power electronic device by using the temperature signal.
ANALYZING AN OPERATING CONDITION OF A POWER CONVERTER
A method analyzes an operating condition of a power converter. The method includes: providing a sample clock signal; determining repeatedly at least one operating parameter of a power semiconductor device of the power converter; and determining the operating condition of the power converter depending on the at least one determined operating parameter. The repetitions of the determining the at least one operating parameter are synchronous to the sample clock signal. For a given repetition of the determination of the at least one operating parameter, determining the at least one operating parameter includes measuring the at least one operating parameter or identifying a value for the at least one operating parameter from a previous repetition depending on a switching behavior of the power converter within the given repetition.
DETERMINING THE REMAINING USABILITY OF A SEMICONDUCTOR MODULE IN NORMAL USE
A method for determining the remaining usability of a semiconductor module in normal use. The semiconductor module is thermally coupled to a cooling device. A predefined electrical load is applied to the semiconductor module while predefined cooling is effected by the cooling device. A temperature of a semiconductor element of the semiconductor module is sensed at least for the predefined electrical load on the semiconductor module. The sensed temperature is compared with a comparison temperature in a first comparison. The comparison temperature is assigned to the predefined electrical load with the predefined cooling, and prediction data for the remaining usability of the semiconductor module in normal use up to a usability end are determined at least in accordance with the first comparison.
METHOD AND APPARATUS FOR ELECTRICAL COMPONENT LIFE ESTIMATION WITH CORROSION COMPENSATION
Systems and methods for estimating electrical component degradation include a processor programmed to: compute a cumulative degradation value for an electrical system component of an electrical system based on an operating parameter of the electrical system component; and to compute a corrosion compensated cumulative degradation value for the electrical system component based on the cumulative degradation value and a corrosion rating of the electrical system.
SEMICONDUCTOR DEVICE AND SYSTEM
A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
A deteriorated section identifying unit refers to correspondence information that defines a deteriorated section of a plurality of bonding sections to the emitter electrode surface to which the first bonding wires are connected, for a combination of temporal change of a first voltage that is a difference between a potential at a collector main terminal and a potential at the emitter main terminal and temporal change of a second voltage that is a difference between a potential at the emitter reference terminal and a potential at the emitter main terminal, and identifies the deteriorated section corresponding to a combination of temporal change of the first voltage measured by a first voltage measuring circuit and temporal change of the second voltage measured by a second voltage measuring circuit.
Testing device
A testing device for inspecting an electronic device by causing contact terminals to electrically contact the electronic device, includes: a mounting table formed with a light transmission member opposite the side on which a inspection object is placed and having therein a coolant flow path through which a coolant capable of transmitting light flows; a light irradiation mechanism disposed so as to face the surface opposite the inspection object placement side of the mounting table, and having LEDs pointing toward the inspection object; and a controller controlling absorption of heat by the coolant and heating by the lights from the LEDs to control the temperature of the electronic device to be inspected. The controller controls the light output from the LEDs based on the measured temperature of the electronic device to be inspected and controls the absorption of heat by the coolant based on the LED light output.
Analyzing an operating condition of a power converter
A method analyzes an operating condition of a power converter. The method includes: providing a sample clock signal; determining repeatedly at least one operating parameter of a power semiconductor device of the power converter; and determining the operating condition of the power converter depending on the at least one determined operating parameter. The repetitions of the determining the at least one operating parameter are synchronous to the sample clock signal. For a given repetition of the determination of the at least one operating parameter, determining the at least one operating parameter includes measuring the at least one operating parameter or identifying a value for the at least one operating parameter from a previous repetition depending on a switching behavior of the power converter within the given repetition.
METHOD FOR ASSESSING THE THERMAL LOADING OF A CONVERTER
A method for assessing the state of damage of a semiconductor module that is subject to operational loading, in particular a semiconductor module of a drive system converter, that includes at least one semiconductor component arranged on or in a support structure. It is possible not only to estimate a spent service life for the entire semiconductor module, but also to detect unexpected or undesirable loading states and thus a premature reduction of the remaining service life of the semiconductor module. Continuous load assessments are thus possible already during the operation of the semiconductor module and allow interventions to be made in good time.