A semiconductor element test apparatus includes a first switch having a switching element, a coil, a second switch, a semiconductor element, a first rectifying element, and a second rectifying element. The first switch, the coil, and the second switch are connected in series to a power source. The semiconductor element is disposed to configure a loop path along with the coil and the second switch when the switching element is switched off. The semiconductor element has a diode element. A cathode electrode of the diode element is connected to a positive electrode of the power source. The second rectifying element is connected to the first rectifying element in series, and has a rectification direction opposite to a rectification direction of the first rectifying element. The first rectifying element and the second rectifying element configure, along with the coil, another loop path which is different from the loop path.

The invention relates to a semiconductor switch and to a method for determining a current in the power path of a semiconductor switch. For this purpose, a semiconductor switch, according to the invention, has a plurality of sense connections, wherein each of said sense connections provides an individual output signal that is proportional to the current in the power path of the semiconductor switch. The evaluation of the current in the power path can be optimized by the appropriate selection of one of the plurality of sense connections in accordance with the current in the power path of the semiconductor switch.

A test circuit for measuring phase distortion includes a first laser, a second laser and a photo diode. The first laser is tuned to a first frequency f1 and generates a first optical signal. The second laser is tuned to a second frequency f2 and generates a second optical signal and phase modulates the second optical signal with a periodic signal with a repetition frequency fM. The photo diode receives and mixes the first optical signal and the second optical signal, and produces a first tone at a third frequency f3, which is a carrier frequency equal to an absolute value of a difference between the second frequency f2 and the first frequency f1, a second tone at a fourth frequency f4 at a difference between the third frequency f3 and the repetition frequency fM, and a third tone at a fifth frequency f5 at a sum of the third frequency f3 and the repetition frequency fM.

A device for providing power to a light arrangement (1) having a current conducting state and a current blocking state. The device comprises a storage circuit (2) with a capacitor (21) coupled to the light arrangement (1) and a resistor (22) located in parallel to the capacitor, a first determination circuit (3) for determining the state of the lighting arrangement, a second determination circuit (4) for, in the current blocking state, determining points of two discharging curves of the storage circuit, a derivation circuit (5) for deriving a condition of the storage circuit, such as life-end, from the discharging curves, a switch circuit (6) comprising an element (61), wherein the switch circuit is configured to switch the element (61) in parallel to the capacitor (21), whereby a first discharging curve is determined with the element being disconnected from the capacitor and a second discharging curve is determined with the element being connected to the capacitor, the capacitor discharging via both the resistor (22) and the element (61). The element (61) may comprise a resistor, a capacitor or an inductor.

A circuit for inspecting a semiconductor device includes: the semiconductor device that is an object to be inspected and includes a diode; a protection element that is connected in series with the semiconductor device and includes a protection diode having higher breakdown resistance than the diode; a switch that includes a switching element connected in series with the semiconductor device and the protection element; and a coil that provides a loop path together with the semiconductor device and the protection element when the switching element is turned off. Even when the semiconductor device including the diode is broken, an inspection device is restricted from being damaged.

The invention relates to a system (30) and a method for identifying a non-switching semiconductor switch (34a, 36a). The system (30) comprises a first semiconductor switch (34a), a first semiconductor component (34b), a second semiconductor switch (36a), a second semiconductor component (36b), a first resistor (64b), a second resistor (66b) and a detection unit (38). The detection unit (38) is designed to identify, on the basis of a curve of a first voltage dropping across the first resistor (64b), whether the first semiconductor switch (34a) is not switching. The detection unit (38) is designed to identify, on the basis of a curve of a second voltage dropping across the second resistor (66b), whether the second semiconductor switch (36a) is not switching.

Disclosed is a method for checking the turn-off capability of an electronic fuse in the form of a MOSFET, said electronic fuse being used as an interrupter switch between a voltage supply and a control device, wherein the MOSFET is turned on during operation as intended and is operated in the linear region, wherein, for checking the turn-off capability, the gate-source voltage of the MOSFET is reduced by a predefined value until a predefined threshold value is reached and, after the threshold value has been reached, the gate-source voltage is increased again to the previous value for turning on the MOSFET, and wherein a check is made to ascertain whether the drain-source voltage of the MOSFET increases as the gate-source voltage is reduced.

A system for measuring soft starter current includes a current monitoring system having a controller and a current transfer device that includes a first solid state switching device. A first current sensor is coupled to the first solid state switching device and the controller to sense off-state current of the first solid state switching device. The controller is configured to determine an operational status of the first solid state switching device.

A circuit for inspecting a semiconductor device includes: the semiconductor device that is an object to be inspected and includes a diode; a protection element that is connected in series with the semiconductor device and includes a protection diode having higher breakdown resistance than the diode; a switch that includes a switching element connected in series with the semiconductor device and the protection element; and a coil that provides a loop path together with the semiconductor device and the protection element when the switching element is turned off. Even when the semiconductor device including the diode is broken, an inspection device is restricted from being damaged.

A test system measures parameters of a device under test (DUT), including a transistor. The test system includes a first voltage source unit for supplying a gate voltage; a second voltage source unit for supplying one of a drain voltage or a source voltage, the second voltage source having a current measurement device for detecting one of a drain current or a source current flowing through the transistor, respectively; a feedback unit for outputting a feedback current, based on the one of the drain or source currents; and an error amplifier for outputting a feedback control signal, based on comparison of the feedback current and a target current value. The first voltage source unit adjusts the gate voltage based on the feedback control signal so that the one of the drain or source currents converges to match the target current value.