Patent classifications
G01R31/2635
Optical power monitoring using dual modulation
A system and method for measuring optical power is described. The optical system and method may include a module configured to generate a secondly modulated signal based on secondly modulating a firstly modulated signal with an amplitude modulated signal. The firstly modulated signal may include data that is modulated for transmission by a laser diode array. The firstly modulated signal may then be secondly modulated using amplitude modulation techniques. The system may further include a photodiode configured to generate a photodiode current based on optically sensing a laser diode array. The laser diode array outputs an optical output power based on being driven by the secondly modulated signal. The system may yet further include a controller configured to calculate the optical output power from the photodiode current based on the amplitude modulated signal.
Image sensor system and image sensor
An image sensor system includes an image sensor and a prediction part. The image sensor includes an illumination module and a processing part. The illumination module includes a light emitting part for emitting light and a nonvolatile memory. The processing part stores a first data and a second data in the memory. The first data includes an electric parameter value when the light emitting part is applied with a power and a cumulative power-on time obtained by accumulating a time when the light emitting part is applied with the power. The second data includes a value obtained by multiplying the electric parameter value when the light emitting part is applied with the power by the cumulative power-on time. The prediction part obtains the first data or the second data from the memory and predicts a lifetime of the light emitting part based on the first data or the second data.
DETECTION DEVICE AND DETECTION METHOD
A detection device and a detection method are provided. The detection device includes a plurality of detection portions, a signal generator, and an optical component. The detection portions include a first detection electrode and a second detection electrode disposed at a same side. Different electrical signals provided by the signal generator are provided to a first electrode and a second detection electrode of a corresponding micro light-emitting device by the first detection electrode and the second detection electrode, respectively, to make a plurality of micro light-emitting devices emit light, and corresponding optical parameters are obtained by the optical component according to light-emitting conditions.
Tandem Micro-Light Emitting Diode Redundancy Architecture
A display system of a display includes multiple primary light emitting diodes and multiple secondary light emitting diodes. The multiple primary light emitting diodes may emit light, in which at least a first primary light emitting diode of the multiple primary light emitting diodes is shorted. Moreover, the multiple secondary light emitting diodes may emit light. At least a first secondary light emitting diode of the multiple secondary light emitting diodes is associated with the first primary light emitting diode, and the first secondary light emitting diode may emit light based at least in part on the first primary light emitting diode being shorted.
METHOD FOR TESTING LIGHT-EMITTING DIODE, AND A PLASMA GENERATING DEVICE FOR IMPLEMENTING THE METHOD
A method for testing a light-emitting diode (LED) includes steps of providing a plasma generating device in proximity to a device under test (DUT) that includes the LED and a conductive port which are electrically connected to each other, and utilizing the plasma generating device to emit a plasma beam toward the conductive port of the DUT to cause generation of a positive voltage on the LED for testing the LED.
Method for inspecting light-emitting diodes and inspection apparatus
An inspection apparatus including an illumination light source, a sensing probe and a processing device is provided. The illumination light source emits an illumination beam to simultaneously irradiate the plurality of light-emitting diode. The sensing probe is configured to measure a charge distribution, an electric field distribution, or a voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. The processing device determines a plurality of electro-optical characteristics of the plurality of light-emitting diodes through the charge distribution, the electric field distribution, or the voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. Moreover, a method of for inspecting light-emitting diodes is also provided.
Micro LED display and repair method thereof
A micro LED display includes a display substrate, a first soldering layer, at least one second soldering layer, first micro LEDs and at least one second micro LED. The display substrate includes a substrate having a plurality of pixel areas, a first circuit layer and a second circuit layer, and the first circuit layer and the second circuit layer are arranged in each pixel area. The first soldering layer is disposed on the first circuit layer, and the second soldering layer is disposed on the second micro LED. An arranging area of the first soldering layer is greater than an arranging area of the second soldering layer. The first micro LEDs is bonding to the first circuit layer in each pixel area through the first soldering layer. The second micro LED is bonding to the second circuit layer of one of the pixel areas through the second soldering layer.
Method of manufacturing surface-emitting lasers, method of testing surface-emitting lasers, and surface-emitting-laser-testing apparatus
In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.
Intelligent Wafer-Level Testing of Photonic Devices
A wafer includes a semiconductor substrate, multiple photonics devices and a test coupler. The multiple photonics devices are fabricated on the substrate and have multiple respective ports. The test coupler is disposed on the wafer and is configured to couple an optical test signal between a tester and the multiple ports of the multiple photonics devices during testing of the photonics devices.
METHOD FOR TESTING LIGHT-EMITTING DEVICES
A method for testing LEDs includes: Step 1: providing a wafer including a plurality of LEDs and selecting N LEDs from the plurality of LEDs to form an LED group; Step 2: selecting n LEDs from the LED group, where 1<n<N, and testing the n LEDs at a time to obtain a subgroup optical parameter of the LED group; Step 3: performing the Step 2 on the N LEDs repeatedly and alternately for another n LEDs in the LED group to obtain a plurality of the subgroup optical parameters; and Step 4: obtaining an optical parameter of each of the LEDs in the LED group from the plurality of the subgroup optical parameters.