An effect of PID is measured with higher accuracy by using an oscillation circuit. There is provided a semiconductor device including at least one measurement transistor a gate of which is electrically connected to an antenna unit that functions as an antenna in a plasma process, a selection transistor a source of which is electrically connected to the gate of the measurement transistor in parallel to the antenna unit; and an oscillation circuit electrically connected to a source of the measurement transistor and having an oscillation frequency that changes according to a threshold voltage of the measurement transistor.

Provided are a semiconductor device and a method of operating the same. A semiconductor includes a test circuit which comprises: a test transistor to be tested for time-dependent dielectric breakdown (TDDB) characteristics using a stress voltage; an input switch disposed between a voltage application node to which the stress voltage is applied and an input node which transmits the stress voltage to the test transistor; and a protection switch disposed between the input node and a ground node.

Systems and methods are disclosed for IC fabrication by specifying a process monitor with one or more functional blocks including process monitoring structures and wafer identification and die location data on the wafer; fabricating the functional blocks embedded in the wafer at one or more die locations; capturing functional test measurements during or after fabricating the functional blocks; and predicting device failures based on information of known device failures or related process parameters and their relationship to functional test measurements.

A system comprising a network-on-chip (NOC) fabric comprising a plurality of routes to communicate data between a plurality of agents; a plurality of built-in self-test (BIST) generators, wherein a BIST generator of the plurality of BIST generators is coupled between an agent of the plurality of agents and the NOC fabric and is to transmit at least one test pattern through the NOC fabric; and a plurality of BIST checkers, wherein a BIST checker of the plurality of BIST checkers is coupled between the agent of the plurality of agents and the NOC fabric and is to receive at least one test pattern through the NOC fabric from at least one of the plurality of BIST generators and to verify whether the at least one test pattern was transmitted correctly through the NOC fabric.

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, a device configured to monitor electrical overstress (EOS) events includes a pair of spaced conductive structures configured to electrically arc in response to an EOS event, wherein the spaced conductive structures are formed of a material and have a shape such that arcing causes a detectable change in shape of the spaced conductive structures, and wherein the device is configured such that the change in shape of the spaced conductive structures is detectable to serve as an EOS monitor.

A semiconductor device includes a temperature sensor, a scan control circuit which generates scan chain selection information in accordance with a measurement result of the temperature sensor, a clock control circuit which generates one or more scan chain clock signals based on an external clock signal and the scan chain selection information, a pattern generation circuit which generates a test pattern, and a logic circuit which includes a plurality of scan chains and which receives the scan chain clock signals and the test pattern. The clock control circuit generates the scan chain clock signal in association with each scan chain. During a burn-in test, the logic circuit captures the test pattern into the scan chain associated with the scan chain clock signal.

The invention relates to an electronic component comprising a first integrated sub-circuit having a defined interface and a defined fixed-hardware functionality, a second, reconfigurable integrated sub-circuit being signal-connected via the interface to the first sub-circuit to exchange signals therewith, and optionally supply energy thereto, and one or more terminals for electrically connecting the electronic component to its periphery. The second sub-circuit is configured as an interface circuit between the one or more terminals and the first sub-circuit. The second sub-circuit is further configured as a reconfigurable integrated testing unit to test said hardware functionality of the first sub-circuit by applying one or more input signals to the first circuit and evaluating one or more output signals received via the interface from the first sub-circuit in response to the one or more input signals for conformance with one or more predetermined test criteria.

A voltage application region and a voltage applying pad form withstand voltage measuring wiring lines insulated from each other and different from each other by connecting a seal ring and a relay region through a via, and the withstand voltage measuring wiring lines different from each other are configured to apply a voltage between insulated seal rings provided on wiring layers adjacent to each other by applying a voltage between the voltage application region and the voltage applying pad.

A semiconductor integrated circuit device and an inspection method for a semiconductor integrated circuit device capable of improving burn-in screening quality by improvement in an activation rate of a DSP without operating a diagnostic circuit at the time of wafer level burn-in in a semiconductor integrated circuit device incorporating an analog circuit and the diagnostic circuit for the analog circuit are provided.

A method for an improved characterization of standard cells in a circuit design process is disclosed. Adaptive body biasing is considered during the design process by using simulation results of a cell set, a data-set for performance of the cell set, and a data-set for a hardware performance for a slow, typical and fast circuit property. Static deviations in a supply voltage are considered by determining a reference performance of a cell and a reference hardware performance monitor value at a PVT corner. A virtual regulation and adapting of body bias voltages of the cell set is performed such that the reference performance of the cell or the reference hardware performance monitor value will be reached at each PVT corner and for compensating the static deviation in the supply voltage. The results are provided in a library file.