A system for monitoring and controlling an IC testing machine includes a vibration sensor, a sensor interface, and a processor coupled to the sensor interface. The vibration sensor is in mechanical communication with an IC testing machine to develop an electrical vibration signal representing mechanical vibrations generated by the operation of the IC testing machine. The sensor interface processes the vibration signal to develop vibration data that can be processed by the processor to determine whether the vibration data is indicative of an operational anomaly and, if so, to generate a machine control signal to correct an operation of the IC testing machine. Multiple vibration sensors can be used to increase the amount of vibration data available for analysis.

A system for monitoring and controlling an IC testing machine includes a vibration sensor, a sensor interface, and a processor coupled to the sensor interface. The vibration sensor is in mechanical communication with an IC testing machine to develop an electrical vibration signal representing mechanical vibrations generated by the operation of the IC testing machine. The sensor interface processes the vibration signal to develop vibration data that can be processed by the processor to determine whether the vibration data is indicative of an operational anomaly and, if so, to generate a machine control signal to correct an operation of the IC testing machine. Multiple vibration sensors can be used to increase the amount of vibration data available for analysis.

A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.

A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.

When VC inspection for a TEG is performed, it is easily detected whether any failure of a contact plug occurs or not by increasing an emission intensity of a contact plug, so that reliability of a semiconductor device is improved. An element structure of an SRAM is formed on an SOI substrate in a chip region. Also, in a TEG region, an element structure of an SRAM in which a contact plug is connected to a semiconductor substrate is formed on the semiconductor substrate exposed from an SOI layer and a BOX film as a TEG used for the VC inspection.

A system for monitoring and identifying states of a semiconductor device, the system including at least one acoustic sensor for sensing acoustic emission emitted by at least one semiconductor device operating at a voltage of less than or equal to 220 V, the at least one acoustic sensor outputting at least one acoustic emission signal and a signal processing unit for receiving the at least one acoustic emission signal from the at least one acoustic sensor and for analyzing the at least one acoustic emission signal, the signal processing unit providing an output based on the analyzing, the output being indicative at least of whether the at least one semiconductor device is in an abnormal operating state with respect to a normal operating state of the semiconductor device.

Described are various embodiments of a contrast-enhancing staining system and method. In one embodiment, a method is described for enhancing contrast in an image of a substrate surface between regions of said substrate having different charge carrier characteristics. The method comprises exposing said substrate to a staining precursor comprising an oxidant; directing microwave electromagnetic radiation at the substrate, said microwave electromagnetic radiation enhancing a reaction rate of said oxidant reacting into a deposition material, said reaction rate being related to the charge carrier characteristics of a proximal region; and acquiring an image of said substrate surface indicating a visual contrast between each of said regions based on differential deposition of the deposition material therebetween.

A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

A semiconductor inspection device capable of detecting an abnormality with high sensitivity in a failure analysis of a fine-structured device is provided. An electron optical system radiates an electron beam to a sample on a sample stage. A measurement device measures an output from a measurement probe that is in contact with the sample. An information processing device starts and stops the radiation of the electron beam to the sample, sets a first measurement period in which the measurement device measures the output from the measurement probe during the radiation and a second measurement period in which the measurement device measures the output from the measurement probe after the radiation, and obtains the measurement value of the output from the measurement probe based on a difference between a first measurement value measured in the first measurement period and a second measurement value measured in the second measurement period.