Embodiments herein relate to a test, repair, and diagnostic solution for chip-to-chip interconnects. In one aspect, on a first chip, a first finite state machine (FSM) is coupled to a set of transmit lanes. To test each transmit lane, one at a time, the first FSM is to apply a first periodic signal to a transmit lane under test and concurrently apply a second periodic signal to other transmit lanes of the set of transmit lanes, where a phase of the first periodic signal is opposite to a phase of the second periodic signal. A comparator compares a detected signal on the lane under test to an expected response. The comparator can be on the first chip, when the first chip is tested alone, or on a second chip, where the two chips are tested together.

An inspection circuit for inspecting a connection state between a semiconductor storage element including a storage section, and a semiconductor element connected to the semiconductor storage element, the inspection circuit includes: an input terminal that is input with a test signal to be sent to a first controller; an input/output terminal that is input and output with data to be written to or read from the storage section; a first inspection section that is input with an inspection signal; a second inspection section, disposed between the input terminal and the first controller, that converts the test signal to a control signal at a predetermined logic level under control of the first inspection section; and a third inspection section, disposed between the input/output terminal and a second controller, that sends the test signal to the second controller under control of the first inspection section.

A board adapter device includes: a first adapter structure provided with a gold finger matched with a board of a target memory module, a second adapter structure provided with a connector matched with the gold finger, and a signal transmission structure including a first and second transmission module. The first transmission module is for connecting a data signal line, a clock signal line, an address signal line, and a control signal line of the gold finger to corresponding connecting lines of the connector. The second transmission module is configured to, when receiving a power input signal, convert the power input signal into a power output signal matched with a power supply of the target memory module, and transmit the power output signal to a power signal line of the connector.

A network on a chip (NoC) testing interface (NTI) includes a plurality of switches whose ports are coupled to respective endpoints. In one embodiment, the ports and endpoints are coupled to a shared bus that starts and terminates at a root device. The endpoints are assigned unique address which the NTI uses to select one of the endpoints so that test data is forwarded to a device under test (DUT) coupled to the endpoint. In one embodiment, the endpoints include selection logic for determining whether the endpoint has been selected, and if so, forwarding test data to the DUT. For example, if the endpoint receives a data vector on the bus which has an address that matches the unique address of the endpoint, the selection logic forwards the test data contained in subsequently received data vectors to the DUT until a different address is received.

A semiconductor die includes a feedback path coupled to the output pin, and an integrity monitor circuit (IMC). The output pin is communicatively coupled to the logic. The IMC is configured to receive a data value. The IMC is further configured to receive measured data value from the output pin routed through the feedback path, compare the data value and the measured data value, and, based on the comparison, determine whether an error has occurred.

A thermal abnormality detection system includes: a first heat dissipation system having a first temperature sensor for measuring an actual temperature of the first heat dissipation system; a second heat dissipation system having a second temperature sensor for measuring an actual temperature of the second heat dissipation system. Assuming that a difference between the actual temperature of the first heat dissipation system and an upper limit temperature of the first heat dissipation system is d1, and a difference between the actual temperature of the second heat dissipation system and an upper limit temperature of the second heat dissipation system is d2, when a value of d1d2 is greater than an error threshold value Error1_level, the first heat dissipation system is determined to be abnormal, and when the value of d1d2 is less than an error threshold value Error2_level, the second heat dissipation system is determined to be abnormal.

A semiconductor device includes a first integrated chip; a second integrated chip; a plurality of reference through-chip vias formed through the first and second integrated circuit chips; and at least a normal through-chip via formed through the first and second integrated circuit chips, wherein the first integrated circuit chip comprises: a plurality of reference sourcing circuits suitable for sourcing a reference current to the respective reference through-chip vias; and at least a sourcing circuit suitable for sourcing the reference current to the normal through-chip via, and wherein the second integrated circuit chip comprises: a plurality of reference sinking circuits suitable for sinking currents flowing through the respective reference through-chip vias; a line suitable for electrically coupling the plurality of reference through-chip vias; a comparison voltage generation circuit suitable for generating a plurality of comparison voltages based on a voltage of the line; at least a sinking circuit suitable for sinking a current flowing through the normal through-chip via; and a comparison circuit suitable for comparing the voltage of the normal through-chip via to the plurality of comparison voltages.

An integrated circuit chip comprising: system circuitry comprising interconnect circuitry for transporting transactions; and monitoring circuitry configured to: monitor transactions from the interconnect circuitry comprising transactions between an entity and a specified region of the integrated circuit chip, the entity being associated with a set of one or more access rights for accessing the specified region of the integrated circuit chip; determine from the monitored transactions values of one or more parameters associated with the access to the specified region by the entity to identify whether the entity has breached its access rights; and perform a dedicated action indicative of a breach of the access rights in response to determining from the parameter values that the entity has breached its access rights.

A chip package and method of fabricating the same are described herein. The chip package includes a high speed data transmission line that has an inter-die region through which a signal transmission line couples a first die to a second die. The signal transmission line has a resistance greater than an equivalent base resistance (EBR) of a copper line, which reduces oscillation within the transmission line.

A bonded structure is disclosed. The bonded structure can include a first element that has a first plurality of contact pads. The first plurality of contact pads includes a first contact pad and a second redundant contact pad. The bonded structure can also include a second element directly bonded to the first element without an intervening adhesive. The second element has a second plurality of contact pads. The second plurality of contact pads includes a third contact pad and a fourth redundant contact pad. The first contact pad is configured to connect to the third contact pad. The second contact pad is configured to connect to the fourth contact pad. The bonded structure can include circuitry that has a first state in which an electrical signal is transferred to the first contact pad and a second state in which the electrical signal is transferred to the second contact pad.