According to an embodiment of the present disclosure, an integrated circuit includes: at least one sensing element configured to generate a sensed signal responsive to an electrical or magnetic phenomenon; an analog-to-digital converter configured to convert the sensed signal into a digital signal; and a digital processor configured to detect a target frequency of the electrical or magnetic phenomenon by iteratively applying a first real-valued coefficient to samples of the digital signal using real-valued arithmetic.

A magnetic field sensor includes a first magnetic field sensing element configured to produce a first signal representing a detected external magnetic field; a circular vertical hall element configured to produce a second signal representing an amplitude of the external magnetic field; and an error compensation circuit coupled to receive the first and second signal, compute an error value based on the amplitude of the external magnetic field, and apply the error value to the first signal to compensate for an error in the first signal.

A Hall element is integrated on a single substrate and is capable of cancelling offset voltage with a spinning switch configured to switch spinning current and capable of simultaneously detecting a horizontal direction magnetic field and a vertical direction magnetic field. The Hall element has a four-fold rotational axis and includes a P-type semiconductor substrate layer formed of P-type silicon, a vertical magnetic field detection N-type doped region formed on the P-type semiconductor substrate layer, and eight horizontal magnetic field detection N-type doped regions formed so as to surround the vertical magnetic field detection N-type doped region.

A magnetic field sensor for sensing external magnetic fields on multiple axes comprises a coil structure and a gain equalization circuit. The coil structure generates reference fields on magnetic field sensing elements in each axis. The gain equalization circuit measures and compares reference fields to generate gain-equalized output signals responsive to the external magnetic fields.

The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to a first set of sensing blocks of the plurality of sensing blocks; and a second switching element connecting to a second set of sensing blocks of the plurality of sensing blocks.

A rotary button system for use in a domestic apparatus, comprising: a ferromagnetic plate; a button removably mountable at a predefined first distance from said ferromagnetic plate on a first side of said plate, and rotatable about a virtual rotation axis substantially perpendicular to said plate, and comprising a permanent magnet magnetised in a direction perpendicular to said rotation axis; and a magnetic sensor device mounted at a predefined second distance from said ferromagnetic plate on a second side of said plate opposite the first side, and comprising one or more magnetic sensors for measuring one or more magnetic field components or field gradients, and configured for determining an angular position of the rotary button based on said one or more field components and/or field gradients.

A Hall sensor trim circuit includes a current source, a transistor, a reference voltage circuit, an amplifier, and a Hall sensor. The transistor includes a first terminal, a second terminal, and a third terminal. The third terminal is coupled to the current source. The amplifier includes an output terminal, a first input terminal, and a second input terminal. The output terminal is coupled to the first terminal of the transistor. The first input terminal is coupled to the second terminal of the transistor. The second input terminal is coupled to the reference voltage circuit. The Hall sensor is coupled to the current source.

A vertical Hall sensor includes a Hall effect region and a plurality of contacts formed in or on a surface of the Hall effect region. The plurality of contacts are arranged in a sequence along a path extending between a first end and a second end of the Hall effect region. The plurality of contacts includes at least four spinning current contacts and at least two supply-only contacts. The spinning current contacts are configured to alternatingly function as supply contacts and sense contacts according to a spinning current scheme. The at least four spinning current contacts are arranged along a central portion of the path. The at least two supply-only contacts are arranged on both sides of the central portion in a distributed manner and are configured to supply electrical energy to the Hall effect region according to an extension of the spinning current scheme.

An electromechanical sensor and a method of sensing an object or a tactile input using the sensor. The sensor includes: a base provided with a magnetic sensor arranged to detect a change in magnetic flux at the position of the magnetic sensor; a flexible film adjacent to the magnetic sensor; and a magnetic element provided on the flexible film; wherein the magnetic element is arranged to move relative to the magnetic sensor when the flexible film is reversibly deformed by an external force applied to the flexible film.

A semiconductor chip for measuring a magnetic field. The semiconductor chip comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element is mounted on the electronic circuit. The magnetic sensing element is electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material.