A magnetic field sensor may include a semiconductor structure having a planar surface, and first, second, and third sensing devices. The semiconductor structure may include a semiconductor member having a two-dimensional electron gas therein, and an insulator member disposed on the semiconductor member. The first sensing device may be configured to sense magnetic field along a first axis parallel to the planar surface. The second sensing device may be configured to sense magnetic field along a second axis parallel to the planar surface, and orthogonal to the first axis. The third sensing device may be configured to sense a magnetic field along a third axis normal to the planar surface. Each of the first, second, and third sensing devices may be formed in the semiconductor structure and may include electrodes that extend from the insulator member to the two-dimensional electron gas.

A magnetic field sensor includes a current source configured to generate a bias current, a plurality of magnetic field transducers, each having power terminals coupled to the current source and output terminals at which an output signal of the transducer is provided, wherein the power terminals of each of the plurality of magnetic field transducers are electrically coupled together in series so that the bias current flows through each of the plurality of magnetic field transducers in series. A capacitively-coupled summing amplifier has a plurality of inputs, each configured to receive the output signal of a respective one of the plurality of magnetic field transducers, and an output at which an amplified and summed signal is provided, wherein the capacitively-coupled summing amplifier is configured to amplify and sum the received output signals of the plurality of magnetic field transducers.

Transistor devices are provided. In some example implementations, a magnetic field sensor chip is fitted on a load electrode of a transistor chip. In other example implementations, two magnetic field sensors are arranged on a load electrode of a transistor chip in such a way that they measure different effective magnetic fields in the event of current flow through the transistor chip.

In one aspect, an angle sensor includes magnetic-field sensing elements that include a first pair, a second pair, a third pair and a fourth pair of magnetic-field sensing elements; and processing circuitry configured to determine an angle of a rotating ring magnetic having a plurality of North-South pole pairs each having a unique period length. The processing circuitry includes a first bridge formed from the first and second pairs of magnetic-field sensing elements and a second bridge formed from the third and fourth pairs of magnetic-field sensing elements. The angle includes a value from 0° to 360°. The first, second, third and fourth pairs of magnetic-field sensing elements are each disposed on a first axis. The first, second, third and fourth pairs of magnetic-field sensing elements each have a sensitivity in a first direction along the first axis. The angle sensor is formed on a single die.

A magnetic field sensor may include a semiconductor structure having a planar surface, and first, second, and third sensing devices. The semiconductor structure may include a semiconductor member having a two-dimensional electron gas therein, and an insulator member disposed on the semiconductor member. The first sensing device may be configured to sense magnetic field along a first axis parallel to the planar surface. The second sensing device may be configured to sense magnetic field along a second axis parallel to the planar surface, and orthogonal to the first axis. The third sensing device may be configured to sense a magnetic field along a third axis normal to the planar surface. Each of the first, second, and third sensing devices may be formed in the semiconductor structure and may include electrodes that extend from the insulator member to the two-dimensional electron gas.

Provided is a Hall element that detects a magnetic field. The Hall element includes a substrate including a semiconductor region, a first drive electrode arranged on the substrate, a first ground electrode arranged on the substrate separately from the first drive electrode in a first direction, a second ground electrode arranged on the substrate separately from the first drive electrode in a second direction different from the first direction, and a detection electrode group including a first electrode group that detects a Hall voltage generated by a current of components perpendicular to a surface of the substrate, the current flowing from the first drive electrode to the first ground electrode and the second ground electrode.

A Hall integrated circuit including a vertical Hall element, having a first wafer and a second wafer, the second wafer including a CMOS substrate integrating a CMOS processing circuit coupled to the vertical Hall element and a stack of dielectric layers, and the first wafer including a Hall-sensor layer having a first surface and a second surface, the first and second wafers being bonded with the interposition of a dielectric layer arranged above the first surface of the Hall-sensor layer. The vertical Hall element has: at least a first Hall terminal; at least a second Hall terminal; a deep trench isolation ring extending through the Hall-sensor layer from the first surface to the second surface and enclosing and isolating a Hall sensor region of the Hall-sensor layer; and a first and a second conductive structures electrically connected to respective contact pads embedded in the stack of the second wafer.

By configuring an encoder scale as a varying scale with successively increasing or decreasing pitch, sensors in a travel path of the scale can detect a phase difference to determine an absolute position of the scale for use in an industrial control system. Due to the successively increasing or decreasing pitch, each sensor can detect successively increasing or decreasing properties (such as magnetic fields) from the scale in a uniquely identifiable pattern. By taking the difference between readings of adjacent sensors, each sensor detecting properties of the scale, an absolute position of the scale between the sensors can be determined. The principle for feedback for the encoder system is analogous to a Nonius or Vernier principle to determine absolute position.

A system includes a ring magnet having magnetic segments and configured to rotate about an axis of rotation, wherein adjacent segments have different magnetic polarities, The system can further include a substrate positioned so that a top surface of the substrate is substantially parallel to the axis of rotation and a center plane passing through the ring magnet and perpendicular to the axis of rotation of the ring magnet intersects the top surface at an intersection line. The system can further include four magnetic field sensing elements supported by the substrate and electrically coupled to form a first bridge circuit, wherein two of the four magnetic field sensing elements are positioned on one side of the intersection line and the other two of the four magnetic field sensing elements are positioned on the other side of the intersection line.

A method of magnetic sensing uses at least two magnetic sensing elements including a first and a second magnetic sensor element. The method includes: a) measuring in a first configuration a combination of the first and second signal obtained from both sensors; b) measuring in a second configuration an individual signal obtained from the first sensor only; c) testing a consistency of the combined signal and the individual signal, or testing a consistency of signals derived therefrom, in order to detect an error. A sensor device is configured for performing this method. A sensor system includes the sensor device and optionally a second processor connected thereto.