G01R33/093

MAGNETIC ANGLE SENSOR SYSTEM WITH STRAY FIELD COMPENSATION
20220393554 · 2022-12-08 ·

The innovative concept described herein relates to a magnetic angle sensor system having a rotatable shaft, a permanent magnet coupled to the rotatable shaft, and a magnetic field sensor arranged opposite the permanent magnet, wherein the magnetic field sensor is configured to detect a magnetic field prevailing in its detection region. The magnetic angle sensor system comprises means for reducing and/or compensating for an inhomogeneous stray field component of a per se homogeneous external magnetic stray field.

Magnetic sensor and camera module

A pair of bias magnets applies a bias magnetic field to the magneto-resistive effect element, the bias magnetic field having a component in a direction such that the component cancels the external magnetic field that is applied to the magneto-resistive effect element and a component that is perpendicular to the external magnetic field. The bias magnet has an elongate cross section in a plane that is parallel both to the external magnetic field and to the bias magnetic field. In a projection plane that is parallel to the cross section and onto which the bias magnets and the magneto-resistive effect element are projected, the bias magnet includes an element facing side that is opposite to the magneto-resistive effect element and that extends in a longitudinal direction. The bias magnet is magnetized in a direction that is perpendicular to the longitudinal direction. The element facing side is longer than other sides.

Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method
11521776 · 2022-12-06 · ·

A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.

Stray field robust XMR sensor using perpendicular anisotropy

A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.

MAGNETORESISTIVE STACK WITHOUT RADIATED FIELD, SENSOR AND MAGNETIC MAPPING SYSTEM COMPRISING SUCH A STACK

A magnetoresistive stack includes a reference layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a first coupling intensity, a free layer having a coercivity of less than 10 microTesla, the free layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a second coupling intensity lower than the first coupling intensity, a third spacer layer separating the reference and free layers.

MAGNETIC PROPERTY MEASURING APPARATUS AND MAGNETIC PROPERTY MEASURING METHOD

A magnetic property measuring apparatus measures magnetic properties of a magnetic recording medium, and includes a rotating mechanism which rotates the magnetic recording medium, a heating or cooling mechanism which heats or cools the magnetic recording medium; a temperature measuring mechanism which measures a temperature of the magnetic recording medium, a laser heating mechanism, disposed opposite to a measurement site of the magnetic recording medium, which heats the measurement site without making contact with the measurement site, a magnetic write part, disposed opposite to the measurement site, which magnetizes the measurement site without making contact with the measurement site, and a magnetic read part, disposed opposite to the measurement site, which reads a magnetic flux leakage at the measurement site without making contact with the measurement site.

Systems and methods using magnetically-responsive sensors for determining a genetic characteristic
11512348 · 2022-11-29 · ·

Sequencing-by-synthesis (SBS) method is provided that includes providing a detection apparatus that includes an array of magnetically-responsive sensors. Each of the magnetically-responsive sensors is located proximate to a respective designated space to detect a magnetic property therefrom. The detection apparatus also includes a plurality of nucleic acid template strands located within corresponding designated spaces. The method also includes conducting a plurality of SBS events to grow a complementary strand by incorporating nucleotides along each template strand. At least some of the nucleotides are attached to corresponding magnetic particles having respective magnetic properties. Each of the plurality of SBS events includes detecting changes in electrical resistance at the magnetically-responsive sensors caused by the respective magnetic properties of the magnetic particles. The method also includes determining genetic characteristics of the complementary strands based on the detected changes in electrical resistance.

Single-chip double-axis magnetoresistive angle sensor

A single-chip two-axis magnetoresistive angle sensor comprises a substrate located in an X-Y plane, a push-pull X-axis magnetoresistive angle sensor and a push-pull Y-axis magnetoresistive angle sensor located on the substrate. The push-pull X-axis magnetoresistive angle sensor comprises an X push arm and an X pull arm. The push-pull Y-axis magnetoresistive angle sensor comprises a Y push arm and a Y pull arm. Each of the X push, X pull, Y push arm, and Y pull arms comprises at least one magnetoresistive angle sensing array unit. The magnetic field sensing directions of the magnetoresistive angle sensing array units of the X push, X pull, Y push, and Y pull arms are along +X, −X, +Y and −Y directions respectively. Each magnetoresistive sensing unit comprises a TMR or GMR spin-valve having the same magnetic multi-layer film structure. A magnetization direction of an anti-ferromagnetic layer is set into a desired orientation through the use of a laser controlled magnetic annealing, and a magnetic field attenuation layer can be deposited in the surface of the magnetoresistance angle sensing unit.

Apparatus and method for dynamically adjusting quantum computer clock frequency with a locking pulse

Apparatus and method for dynamically adjusting a quantum computer clock frequency. For example, one embodiment of an apparatus comprises: a quantum execution unit to execute quantum operations specified by a quantum runtime; a qubit drive controller to translate the quantum operations into physical pulses directed to qubits on a quantum chip at a first cycle frequency; a spin echo sequencer to issue spin echo command sequences to cause the qubit drive controller to generate a sequence of spin echo pulses at the first cycle frequency; and qubit measurement circuitry to measure the qubits and to store qubit timing data for each qubit, the qubit timing data indicating a coherence time or an amount of computational time available for each qubit to perform quantum operations.

ELECTRIC CURRENT SENSOR AND SENSING DEVICE
20220373619 · 2022-11-24 ·

The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.