Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

The disclosure relates to a method of determining the initialization state of a multi-turn sensor based on the sensor outputs. The method takes a reading of the sensor outputs, and then determines whether the sensor outputs are feasible based on an assumption that the sensor is initialized in one of two states. If the sensor outputs are correct, this initial assumption is taken to also be correct. However, if an incorrect sensor output is read, then it is taken that the assumed initialization state is incorrect. The sensor is therefore taken to be initialized in the alternative state. The method will then determine whether the sensor outputs are feasible based on this second assumption, and if an incorrect sensor output is still being read, then there is a fault in the multi-turn sensor.

The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI.sub.1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI.sub.2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.

Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

An exemplary magnetic field measurement system includes a wearable sensor unit that includes a magnetometer and a twisted pair cable interface assembly electrically connected to the magnetometer.

A sensor test system having excellent throughput is provided. The sensor test system 1 includes a test apparatus group 20 including a plurality of sensor test apparatuses 30A to 30D coupled to each other so that the sensor 90 can be transferred, and each of the sensor test apparatuses 30A to 30D includes an application unit 40 including an application device 42 including a socket 445 to which the sensor 90 is electrically connected, and a pressure chamber 43 which applies a pressure to the sensor 90, a test unit 35 which tests the sensor 90 via the socket 445, and a conveying robot 33 which conveys the sensor 90 into and out of the application unit 40.

Apparatuses, systems, and associated methods of manufacturing are described that provide for improved sensor devices. An example sensor device includes a magnet mounting tube and a magnet supported within the magnet mounting tube. The sensor device includes a sensor mounting tube that receives at least a portion of the magnet mounting tube and supported magnet therein. The sensor device includes a magnetic sensor affixed to the sensor mounting tube. The sensor device includes a spring positioned around the magnet mounting tube and the sensor mounting tube such that the magnet and the magnetic sensor are surrounded by the spring. In an instance in which a load is applied to either a first end or second end of the spring, the magnet mounting tube translates relative the sensor mounting tube so as to induce a change in magnetic flux identified by the magnetic sensor indicative of a weight of the load.

Magnetic position sensors, systems and methods are disclosed. In an embodiment, a position sensing system includes a magnetic field source; and a sensor module spaced apart from the magnetic field source, at least one of the magnetic field source or the sensor module configured to move relative to the other along a path, the sensor module configured to determine a position of the magnetic field source relative to the sensor module from a nonlinear function of a ratio of a first component of a magnetic field of the magnetic field source to a second component of the magnetic field of the magnetic field source.

A magnetic field generator includes a first planar substrate, a second planar substrate positioned opposite to the first planar substrate and separated from the first planar substrate by a gap, a first wiring set on the first planar substrate, a second wiring set on the second planar substrate, and one or more interconnects between the first planar substrate and the second planar substrate. The one or more interconnects electrically connect the first wiring set with the second wiring set to form a continuous electrical path. The continuous electrical path forms a conductive winding configured to generate, when supplied with a drive current, a first component of a compensation magnetic field configured to actively shield a magnetic field sensing region located in the gap from ambient background magnetic fields along a first axis that is substantially parallel to the first planar substrate and the second planar substrate.