A magnetic field generator includes a plurality of conductive windings comprising a first conductive winding arranged in a first plane and a second conductive winding arranged in a second plane that is substantially parallel to the first plane. The plurality of conductive windings are configured to generate, when supplied with a drive current, a first component of a compensation magnetic field. The first component of the compensation magnetic field is configured to actively shield a magnetic field sensing region located between the first conductive winding and the second conductive winding from ambient background magnetic fields along a first axis that is substantially orthogonal to the first plane and the second plane.

An object of the present invention is to selectively detect a detection magnetic field without separately providing a sensor for detecting an environmental magnetic field. A magnetic field detection device includes a magnetic field detection unit 10 that generates an output signal S1 according to a magnetic field, a first signal generation unit 20 that extracts a predetermined frequency component from the output signal S1 and generates a cancel signal S2 based on the predetermined frequency component, a first magnetic field generation unit 40 that applies a first cancel magnetic field to the magnetic field detection unit 10 based on the cancel signal S2, and a second signal generation unit 30 that generates a detection signal S3 based on the output signal S1 of the magnetic field detection unit 10 to which the first cancel magnetic field is applied. According to the present invention, a cancel signal is generated based on a frequency component of an output signal, and a first cancel magnetic field is applied to a magnetic field detection unit using the cancel signal. Therefore, it is not necessary to separately provide a sensor for detecting an environmental magnetic field. Because this configuration reduces the number of parts, downsizing and cost reduction can be realized.

A sensor assembly includes a first magnetic field sensor that is a first type of sensor and has a first magnetic field sensitivity in a first primary sensing direction. The first primary sensing direction is along a longitudinal axis of the sensor assembly. The sensor assembly further includes a second magnetic field sensor that is a second type of sensor different than the first type of sensor and has a second magnetic field sensitivity in a second primary sensing direction that is less than the first magnetic field sensitivity. The second primary sensing direction is along a second axis that is different than the longitudinal axis.

Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

A magnetic sensor includes a first insulating layer, a second insulating layer, a third insulating layer, a lower coil element located on an opposite side of the first insulating layer from the second insulating layer, and a second MR element. The second MR element includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer are located on an opposite side of the third insulating layer from the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.

Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.