The innovative concept described herein relates to a magnetic angle sensor system having a rotatable shaft, a permanent magnet coupled to the rotatable shaft, and a magnetic field sensor arranged opposite the permanent magnet, wherein the magnetic field sensor is configured to detect a magnetic field prevailing in its detection region. The magnetic angle sensor system comprises means for reducing and/or compensating for an inhomogeneous stray field component of a per se homogeneous external magnetic stray field.

A pair of bias magnets applies a bias magnetic field to the magneto-resistive effect element, the bias magnetic field having a component in a direction such that the component cancels the external magnetic field that is applied to the magneto-resistive effect element and a component that is perpendicular to the external magnetic field. The bias magnet has an elongate cross section in a plane that is parallel both to the external magnetic field and to the bias magnetic field. In a projection plane that is parallel to the cross section and onto which the bias magnets and the magneto-resistive effect element are projected, the bias magnet includes an element facing side that is opposite to the magneto-resistive effect element and that extends in a longitudinal direction. The bias magnet is magnetized in a direction that is perpendicular to the longitudinal direction. The element facing side is longer than other sides.

This disclosure presents systems, devices, and methods that use magnetometers to measure large magnetic moments with strong magnetic anisotropy. A torque magnetometer may include an actuator driven by a motor, a load cell coupled to the actuator, a rotatable spool having a platform configured to hold a sample of a superconductor material, where the rotatable spool is coupled to the load cell by a first line, a pulley, and a second line extending between the rotatable spool and a counterweight, where the second line is positioned on the pulley. Movement of the actuator may cause the rotatable spool to rotate an angle of the platform relative to a magnetic field about the rotatable spool, and the load cell is capable of measuring the tension on the first line.

A polymer composition comprising from about 20 vol. % to about 60 vol. % of a polymer matrix that includes a liquid crystalline polymer and from about 20 vol. % to about 60 vol. % of magnetic particles is provided. The ratio of the volume of the polymer matrix to the volume of the magnetic particles is from about 0.6 to about 1.5.

A single-chip two-axis magnetoresistive angle sensor comprises a substrate located in an X-Y plane, a push-pull X-axis magnetoresistive angle sensor and a push-pull Y-axis magnetoresistive angle sensor located on the substrate. The push-pull X-axis magnetoresistive angle sensor comprises an X push arm and an X pull arm. The push-pull Y-axis magnetoresistive angle sensor comprises a Y push arm and a Y pull arm. Each of the X push, X pull, Y push arm, and Y pull arms comprises at least one magnetoresistive angle sensing array unit. The magnetic field sensing directions of the magnetoresistive angle sensing array units of the X push, X pull, Y push, and Y pull arms are along +X, −X, +Y and −Y directions respectively. Each magnetoresistive sensing unit comprises a TMR or GMR spin-valve having the same magnetic multi-layer film structure. A magnetization direction of an anti-ferromagnetic layer is set into a desired orientation through the use of a laser controlled magnetic annealing, and a magnetic field attenuation layer can be deposited in the surface of the magnetoresistance angle sensing unit.

The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.

A magnetic sensor includes a plurality of resistor sections each including a plurality of MR elements, and a plurality of protruding surfaces each structured to cause the plurality of MR elements to detect a specific component of a target magnetic field. The plurality of MR elements are disposed dividedly in first to fourth areas corresponding to the respective resistor sections. Each of the first to fourth areas includes a first and a second end edge located at both ends in a first reference direction, and a third and a fourth end edge located at both ends in a second reference direction. An angle that each of the plurality of protruding surfaces forms with respect to the first end edge or the second end edge is larger than an angle that each of the plurality of protruding surfaces forms with respect to the third end edge or the fourth end edge.

Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.

According to one embodiment, a magnetic sensor includes a first conductive part circuit, an alternating current circuit part, a first direct current circuit part, and a first element. The first conductive part circuit includes a first conductive part including a first conductive part end portion and a first conductive part other-end portion, and a first alternating current transfer element electrically connected in series with the first conductive part. The first conductive part circuit includes a first circuit end portion and a first circuit other-end portion. The alternating current circuit part is configured to apply an alternating current voltage between the first circuit end portion and the first circuit other-end portion. The first direct current circuit part is configured to apply a first direct current voltage to the first conductive part end portion and the first conductive part other-end portion. The first element includes a first magnetic layer.

A magnetic sensor includes an insulating layer, a first MR element, and a second MR element. The insulating layer includes a protruding surface including first and second inclined surfaces. Each of the first and second MR elements includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer of the first MR element are disposed on the first inclined surface. The magnetization pinned layer and the free layer of the second MR element are disposed on the second inclined surface. The dimension of the protruding surface in a direction parallel to the Z direction is in the range of 1.4 .Math.m to 3.0 .Math.m.