Aspects of the present disclosure provide a power activation module for powering one or more wearable electronic components. The power activation module includes a switch configured to provide a path for current flow between a battery associated with the power activation module, the one or more wearable electronic components, and a ground terminal. The power activation module also includes a sensor configured to detect whether a signal is applied to the sensor and, based on the detection, output a first digital output signal for controlling, at least in part, the switch to control the current flow from the battery to the one or more wearable electronic components. The power activation module also includes a lock pin configured to receive a lock signal, wherein when the lock signal is received, the switch is locked to allow current flow from the battery to the one or more wearable electronic components.

According to an embodiment, a magnetic field sensor includes: one or more magnetic field sensing elements; and a magnet structure to provide a bias magnetic field about the one or more magnetic field sensing elements, the magnet structure includes alternating magnetic layers and non-magnetic layers with at least three magnetic layers.

A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a reference layer, a tunnel barrier layer disposed over the reference layer, a free layer disposed over the tunnel barrier layer, and a diffusion barrier layer disposed over the free layer. The MU element in accordance with the present disclosure exhibits a low resistance desired for a low-power write operation, and a high TIM coefficient desired for a low bit-error-rate (BER) read operation.

A magnetic sensor chip includes a substrate including a first main surface, and a magnetoresistive element having a magnetosensitive direction parallel or substantially parallel to the first main surface. The magnetoresistive element includes a reference layer, an intermediate layer, and a free layer stacked in a stacking direction perpendicular or substantially perpendicular to the first main surface. A direction of magnetic anisotropy of the free layer where no external magnetic field acts on the magnetic sensor chip is parallel or substantially parallel to the stacking direction and perpendicular or substantially perpendicular to the magnetosensitive direction. When a stress acts on the substrate predominantly in a first direction parallel or substantially parallel to the first main surface, a direction of stress-induced magnetic anisotropy in the free layer is perpendicular or substantially perpendicular to the magnetosensitive direction and the stacking direction.

A magnetic sensor device for detecting linear movement of a moving body includes a magnetic field generation unit and a magnetic field detection unit, which is provided to be capable of detecting the magnetic field generated by the magnetic field generation unit. The magnetic field detection unit is provided to be relatively moveable along a first axis accompanying linear movement of the moving body. The first axis is parallel to the direction of movement of the moving body. The magnetic field generation unit includes a first magnetic field generation unit and a second magnetic field generation unit. The first magnetic field generation unit and the second magnetic field generation unit are arranged substantially parallel to the first axis. A first line segment parallel to a first magnetization direction of the first magnetic field generation unit is inclined with respect to a second axis orthogonal to the first axis. A second line segment parallel to a second magnetization direction of the second magnetic field generation unit is inclined with respect to the second axis. The first line segment and the second line segment are positioned symmetrically with respect to the second axis and intersect each other to open toward the first axis.

In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.

A magnetic field detection device, containing a) a first soft magnetic body containing a1) a first plate including a first surface having a first outer edge; and a2) a first protrusion disposed directly or indirectly on the first surface of the first plate at a first arrangement position set back from the first outer edge, the first protrusion including a first tip on an opposite side to the first surface; and b) a magnetic detector provided in a vicinity of the first tip, wherein the magnetic detector has a magnetic sensing direction along the first surface, and the first protrusion is capable of bending a direction of a first magnetic flux, which comes into the first plate, along the first surface.

Apparatuses, systems, and associated methods of manufacturing are described that provide for improved sensor devices. An example sensor device includes a magnet mounting tube and a magnet supported within the magnet mounting tube. The sensor device includes a sensor mounting tube that receives at least a portion of the magnet mounting tube and supported magnet therein. The sensor device includes a magnetic sensor affixed to the sensor mounting tube. The sensor device includes a spring positioned around the magnet mounting tube and the sensor mounting tube such that the magnet and the magnetic sensor are surrounded by the spring. In an instance in which a load is applied to either a first end or second end of the spring, the magnet mounting tube translates relative the sensor mounting tube so as to induce a change in magnetic flux identified by the magnetic sensor indicative of a weight of the load.

A magnetic sensor includes first to fourth resistors, a power supply port, a ground port, a first output port, and a second output port. The first resistor and the second resistor are located in a first region and connected in series via a first connection point connected to the first output port. The third resistor and the fourth resistor are located in a second region and connected in series via a second connection point connected to the second output port, at least a part of the second region being located at a position different from the first region in a direction parallel to an X direction. The first and second resistors are located between the third and fourth resistors in a direction parallel to a Y direction.

A magnetic field sensor may include a plurality of MTJ elements. Each MTJ element of has a state indicated by a magnetic moment direction of a sensing layer relative to a pinned, reference layer in an absence of an external magnetic field. The plurality of MTJ elements are arranged into two identical sets of at least two MTJ elements, where each MTJ element in each respective set has a different state. The states of the MTJ elements are arranged in a manner to measure the external magnetic field regardless of the direction of the external magnetic field. The MTJ elements include identical layers, and are electrically serially connected.