A signal processing method according to the present disclosure is for use in a signal processing system including a first magnetic detection unit, a second magnetic detection unit, and a processing unit. The signal processing method includes an angle calculating step and a failure diagnosis step. The angle calculating step includes transforming, by using an inverse trigonometric function, a sine signal, a cosine signal, and a tangent signal into a first angle signal, a second angle signal, and a third angle signal, respectively. The failure diagnosis step includes making a failure diagnosis of the first magnetic detection unit and the second magnetic detection unit by comparing with each other two or more pieces of angle information selected from first angle information, second angle information, and third angle information.

The disclosed technology relates to a multibit memory cell. In one aspect, the multibit memory cell includes a plurality of spin-orbit torque (SOT) tracks, plurality of magnetic tunnel junctions (MTJs), an electrically conductive path connecting a first MTJ and a second MTJ together, and a plurality of terminals. The plurality of terminals can be configured to provide a first SOT write current to the first MTJ, a second SOT write current to the second MTJ, and at least one of: the second SOT write current to a third MTJ, a third SOT write current to the third MTJ, and a spin transfer torque (STT) write current through the third MTJ. The junction resistances of the various MTJs are such that a combined multibit memory state of the MTJs is readable by a read current through all the MTJs in series.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.

The innovative concept described herein relates to a magnetic angle sensor system having a rotatable shaft, a permanent magnet coupled to the rotatable shaft, and a magnetic field sensor arranged opposite the permanent magnet, wherein the magnetic field sensor is configured to detect a magnetic field prevailing in its detection region. The magnetic angle sensor system comprises means for reducing and/or compensating for an inhomogeneous stray field component of a per se homogeneous external magnetic stray field.

A pair of bias magnets applies a bias magnetic field to the magneto-resistive effect element, the bias magnetic field having a component in a direction such that the component cancels the external magnetic field that is applied to the magneto-resistive effect element and a component that is perpendicular to the external magnetic field. The bias magnet has an elongate cross section in a plane that is parallel both to the external magnetic field and to the bias magnetic field. In a projection plane that is parallel to the cross section and onto which the bias magnets and the magneto-resistive effect element are projected, the bias magnet includes an element facing side that is opposite to the magneto-resistive effect element and that extends in a longitudinal direction. The bias magnet is magnetized in a direction that is perpendicular to the longitudinal direction. The element facing side is longer than other sides.

A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.

A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.

A magnetoresistive stack includes a reference layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a first coupling intensity, a free layer having a coercivity of less than 10 microTesla, the free layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a second coupling intensity lower than the first coupling intensity, a third spacer layer separating the reference and free layers.

A magnetic property measuring apparatus measures magnetic properties of a magnetic recording medium, and includes a rotating mechanism which rotates the magnetic recording medium, a heating or cooling mechanism which heats or cools the magnetic recording medium; a temperature measuring mechanism which measures a temperature of the magnetic recording medium, a laser heating mechanism, disposed opposite to a measurement site of the magnetic recording medium, which heats the measurement site without making contact with the measurement site, a magnetic write part, disposed opposite to the measurement site, which magnetizes the measurement site without making contact with the measurement site, and a magnetic read part, disposed opposite to the measurement site, which reads a magnetic flux leakage at the measurement site without making contact with the measurement site.

The present disclosure relates to integrated circuits, and more particularly, a tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures and methods of manufacture and operation. The structure includes: a first magnetic tunneling junction (MTJ) structure on a first level; a second MTJ structure on a same wiring level as the first MTJ structure; and at least one metal line between the first MTJ structure and the second MTJ structure.