A method for measuring a magnetic field includes radiating a microwave field having a first frequency into at least one measuring location in a crystal, which comprises optically excitable color center defects at the measuring location, radiating excitation light and detecting resulting fluorescence light, applying a deformation force which results in local mechanical strain, wherein an applied first deformation force is selected such that the first frequency corresponds to a resonance frequency of the color center defects under the action of the first deformation force without the magnetic field to be measured and the detected fluorescence light becomes minimal. The method further includes placing the sensor into the magnetic field to be measured to bring about a shift in the resonance frequency and varying the applied deformation force to compensate the shift in the resonance frequency until a minimum fluorescence signal is again acquired at a second deformation force.

A magnetometer includes: a substrate; a diamond layer on the substrate, in which the diamond layer includes a defect sub-layer including multiple lattice point defects; a microwave field transmitter; an optical source configured to emit light including a first wavelength that excites the multiple lattice point defects from a ground state to an excited state; a photodetector arranged to detect photoluminescence including a second wavelength emitted from the defect sub-layer, in which the first wavelength is different from the second wavelength; and a magnet arranged adjacent to the defect sub-layer.

A high-frequency magnetic field generating device includes two coils arranged with a predetermined gap in parallel with each other, the two coils (a) in between which electron spin resonance material is arranged or (b) arranged at one side from electron spin resonance material; a high-frequency power supply that generates microwave current that flows in the two coils; and a transmission line part connected to the two coils, that sets a current distribution so as to locate the two coils at positions other than a node of a stationary wave.

Chemical-shift nuclear magnetic resonance (NMR) spectroscopy involves measuring the effects of chemical bonds in a sample on the resonance frequencies of nuclear spins in the sample. Applying a magnetic field to the sample causes the sample nuclei to emit alternating current magnetic fields that can be detected with color centers, which can act as very sensitive magnetometers. Cryogenically cooling the sample increases the sample's polarization, which in turn enhances the NMR signal strength, making it possible to detect net nuclear spins for very small samples. Flash-heating the sample or subjecting it to a magic-angle-spinning magnetic field (instead of a static magnetic field) eliminates built-in magnetic field inhomogeneities, improving measurement sensitivity without degrading the sample polarization. Tens to hundreds of small, cryogenically cooled sample chambers can be integrated in a semiconductor substrate interlaced with waveguides that contain color centers for optically detected magnetic resonance measurements of the samples' chemical-shift NMR frequencies.

A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.

The invention is related to a novel atomic clock developed by taking into basis Quantum mechanics and the spin-spin status of the electrodes that have been trapped. The disadvantages such as radioactivity perceived in atomic clocks, half life and shelf life are prevented by means of the invention.

An excitation light irradiation device includes a substrate having a color center. The color center is excited by an excitation light incident to the substrate. The substrate includes first and second reflection surfaces facing each other, and first and second end surfaces facing each other. When the excitation light enters into the substrate, the incident excitation light travels from the first end surface to the second end surfaces while repeatedly reflecting between the first and second reflection surfaces. The second end surface is inclined. The second end surface reflects the incident excitation light so as to cause the incident excitation light to be emitted from one of the first and second reflection surfaces.

An embodiment of the invention relates to a sensor comprising a sensor element (10) for measuring a magnetic field, the sensor element (10) comprising a set of at least two first input ports (I1), a set of at least two exit ports (E) each of which is connected to one of the first input ports (I1) via a corresponding first beam path (B1), a set of at least two second input ports (I2) each of which is connected to a second beam path (B2), wherein the first beam paths (B1) extend through a common plane (CP) located inside the sensor element (10), said plane (CP) comprising a plurality of magneto-optically responsive defect centers, wherein the second beam paths (B2) also extend through said common plane (CP), but are angled with respect to the first beam paths (B1) such that a plurality of intersections between the first and second beam paths (B2) is defined, and wherein each intersection forms a sensor pixel (P) located at at least one of said magneto-optically responsive defect centers.

A magnetic field measurement device and a magnetic field measurement method based on solid-state spins are provided. Zeeman splitting between electron energy levels of electrons of a magnetic sensitive unit is different under the action of external magnetic fields having different intensities. Continuous excitation and manipulation is applied to the electrons by means of a control field and control laser, so that spins of a system can reach a balanced state. The spin population of the system is influenced by the external magnetic fields. Therefore, fluorescence signals with intensities changing with the spin population of the system can be obtained, and fluorescent signals having different intensities can be obtained according to the different intensities of the external magnetic fields.

Provided is a quantum sensor based on a rare-earth-ion doped optical crystal, having: a rare-earth-ion doped optical crystal; a low temperature providing unit, which provides a low temperature operating environment to the rare-earth-ion doped optical crystal; a constant magnetic field generation unit, which applies a constant magnetic field to the rare-earth-ion doped optical crystal; a light field generation unit, which provides a light field performing optical pumping on the rare-earth-ion doped optical crystal to prepare the rare-earth-ions in an initial spin state, and a light field for exciting Raman scattering of the rare-earth-ion doped optical crystal; a pulsed magnetic field generation unit, which applies a pulsed magnetic field perpendicular to the constant magnetic field to the rare-earth-ion doped optical crystal to make the rare-earth-ion doped optical crystal generate a spin echo; and a heterodyne Raman scattering light field detection and analysis unit, which detects and analyzes a Raman scattering light field radiated from the rare-earth-ion doped optical crystal. Further provided are uses of this quantum sensor for magnetic field sensing and electric field sensing as well as a sensing method.