An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.

Aspects of the present disclosure relate to an energy-resolving photon counting detector pixel. Further aspects of the present disclosure relate to an energy-resolving photon counting detector comprising a plurality of such pixels, and to an energy-resolving photon counting system comprising the same.

In accordance with an aspect of the present disclosure, a CSA base level shift detector is used for determining a shift in the CSA base level over time relative to a first level. The pixel is configured to reset the CSA in dependence of the determined CSA base level shift.

The present invention relates to a radiation detector (100) comprising: i) a substrate (110); ii) a sensor, which is coupled to the substrate, the sensor comprising a first array (120) of sensor pixels, a second array (130) of signal read-out elements, and an electronic circuitry which is configured to provide image data based on signals received from the signal read-out elements; iii) a transducer, which is coupled to the substrate and to the sensor, the transducer comprising a third array (140) of subpixels, wherein at least two subpixels are assigned to one sensor pixel; wherein the second array of signal read-out elements and the third array of subpixels correspond to each other; wherein each of the subpixels comprises a radiation conversion material.

An X-ray detector according to embodiments is an X-ray detector of a direct conversion type in which a plurality of X-ray detection elements are arranged in a column direction and a channel direction and voltage is applied between anodes and cathodes. The X-ray detector includes processing circuitry. The processing circuitry performs control so as not to use, for generation of image data, data from the X-ray detection elements in end portions in one of the column direction and the channel direction of the X-ray detection elements, and so as to use, for generation of image data, data from the X-ray detection elements in other than the end portions.

A signal processing system (SPS) and related method. The system comprises an input interface (IN) for receiving at least two data sets, comprising a first data set and second data set. The first data set is generated by an X-ray detector sub-system (XDS) at a first pixel size and the second data set generated at a second pixel size different from the first pixel size. An estimator (EST) is configured to compute, based on the two data sets, an estimate of a charge sharing impact.

It is an object to provide a device and a method for x-ray and/or gamma ray detection. a detector comprising a plurality of pixels, each pixel in the plurality of pixels being switchable between a floating mode and a detection mode, wherein each pixel in the plurality of pixels is configured to detect incident x-ray and/or gamma ray radiation when in the detection mode; a control unit coupled to the detector, configured to: during a first temporal frame, configure a first subset of pixels in the plurality of pixels to the floating mode and a second subset of pixels in the plurality of pixels to the detection mode; and during a second temporal frame, configure a third subset of pixels in the plurality of pixels to the floating mode and a fourth subset of pixels in the plurality of pixels to the detection mode. A device and a method are provided.

To optimize an image quality and/or a sensitivity, a Compton camera is adaptable. A scatter detector and/or a catcher detector may move closer to and/or further away from a patient and/or each other. This adaptation allows a balancing of the image quality and the sensitivity by altering the geometry.

A radiation imaging panel comprising a substrate in which a plurality of pixels each including a photoelectric conversion element are arranged, a scintillator containing a plurality of columnar crystals arranged on the substrate, and a protective layer is provided. The protective layer includes a first resin layer arranged so as to cover the scintillator and a second resin layer arranged on the first resin layer, and the first resin layer contains a resin to which particles of a metal compound is added. A light reflectance r1 [%] of the first resin layer satisfies 47%<r1<75%, and a light reflectance r2 [%] of the second resin layer and a light absorptance a2 [%] of the second resin layer satisfy r2<a2.

The invention relates to energy-resolved X-ray imaging apparatus and method. The present disclosure provides an apparatus for electromagnetic irradiation imaging. The apparatus includes one or more pixels, each pixel including a plurality of detector cells arranged in a row extending in a row direction. The row is configured to receive photons at an incident surface at one end of the row, and the received photons penetrate the plurality of detector cells in the row direction. The plurality of detector cells of the same row are configured to generate respective signals that collectively indicate an energy-resolved spectral profile of the photons based on the penetration of the photons into the row of detector cells.

Disclosed herein are apparatuses for detecting radiation and methods of making them. The method comprises forming a recess into a semiconductor substrate, wherein a portion of the semiconductor substrate extends into the recess and is surrounded by the recess; depositing semiconductor nanocrystals into the recess, the semiconductor nanocrystals having a different composition from the semiconductor substrate; forming a first doped semiconductor region in the semiconductor substrate; forming a second doped semiconductor region in the semiconductor substrate; wherein the first doped semiconductor region and the second doped semiconductor region form a p-n junction that separates the portion from the rest of the semiconductor substrate.