An optoelectronic device (LV) with a reflective composite material (V) having a carrier (1) consisting of aluminium, having an interlayer (2) composed of aluminium oxide present on one side (A) of the carrier (1) and having a reflection-boosting optically active multilayer system (3) that has been applied via the interlayer (2). The interlayer (2) consisting of aluminium oxide has a thickness (D.sub.2) in the range from 5 nm to 200 nm and that, on the opposite side (B) of the carrier (1) from the reflection-boosting optically active multilayer system (3), a superficial layer (9) of a metal or metal alloy having, at 25° C., a specific electrical resistivity of not more than 1.2*10.sup.−1 Ωmm.sup.2/m has been applied. The thickness (D.sub.9) of the superficially applied layer (9) is in the range from 10 nm to 5.0 μm. For an optoelectronic device (LV), the leadframe (LF) has a metallic material with an aluminium carrier (1), on the surface (A) of which a metallic joining layer (FA) not consisting of aluminium has been applied locally at the bonding site (SP) of an electronic surface-mounted device (SMD) to a wire (D).

A support for optical elements is described. The support includes a base substrate with high specific stiffness and a finishing layer. The base substrate is a non-oxide ceramic material, preferably a carbide, such as boron carbide or silicon carbide. The finishing layer is preferably Ge or an alloy of Al and Si. The finishing layer is or is capable of being processed to provide a surface with low finish. Low finish is achieved by diamond turning or polishing the finishing material. The finishing layer has a coefficient of thermal expansion similar to the coefficient of thermal expansion of the base substrate. The optical element optionally includes a reflective stack on the finishing layer.

Provided is a wide angle application high reflective mirror having a reflection band partially overlapping in a wavelength range of 800-4000 nm. The mirror comprises a film system in which a plurality of high refractive index film layers and a plurality of low refractive index film layers that are alternately stacked, and the material of the high refractive index film layer is one of SiH, SiO.sub.xH.sub.y, or SiO.sub.xN.sub.y, or a mixture thereof. The highly reflective mirror can achieve a reflectance greater than 99% with an incident angle ranging from 0 to 60 degrees over a large angle range.

An opto-electronic device includes a semiconductor substrate having a planar surface. An emitter is formed on the substrate and configured to emit a beam of light away from the planar surface. A reflective layer is formed on the planar surface adjacent to the emitter. A transparent layer is formed over the planar surface and has a curved outer surface including a first segment positioned vertically over the emitter and configured to internally reflect the emitted beam of light toward the reflective layer, and a second segment positioned and configured to collimate and transmit the beam reflected from the reflective layer.

A multilayer thin film that reflects an omnidirectional structural color including a multilayer stack. The multilayer stack includes a reflector layer; a selective absorber layer extending over the reflector layer; an absorbing layer extending over the first layer; and a dielectric layer extending over the second layer. The multilayer thin film reflects a single narrow band of visible light when exposed to broadband electromagnetic radiation, the single narrow band of visible light having a center wavelength greater than 550 nm, and a visible full width at half maximum (FWHM) width of less than 200 nm. A color shift of the reflected single narrow band of visible light is less than 50 nm when the multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45 degrees relative to a direction normal to an outer surface of the multilayer thin film.

A multilayer thin film that reflects an omnidirectional structural color includes a multilayer stack comprising having: a reflector layer; a first dielectric layer extending over the reflector layer; an absorbing layer extending over the first dielectric layer; and a second dielectric layer extending over the absorbing layer. The multilayer thin film reflects a single narrow band of visible light when exposed to broadband electromagnetic radiation, and the single narrow band of visible light has: a visible full width at half maximum (FWHM) width of less than 200 nm; a color shift of the reflected single narrow band of visible light is less than 50 nm when the multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45 degrees relative to a direction normal to an outer surface of the multilayer thin film.

The invention relates to a reflective composite material (V) having a carrier (1) consisting of aluminum, having an interlayer (2) which is present on a side (A) on the carrier (1) and is composed of a varnish, and having an optically active multilayer system (3) which has been applied atop the interlayer (2) and consists of at least three layers, wherein the upper layers (4, 5) are dielectric and/or oxidic layers, and the lowermost layer (6) is a metallic layer which consists of silver and forms a reflection layer (6). To increase the aging resistance, it is proposed that the interlayer (2) comprise an organic layer-forming varnish or be formed entirely from such a varnish that has been cured in an ionic photopolymerization and crosslinking or that has been cured after UV irradiation by free-radical photopolymerization and crosslinking.

A reflective composite material with a carrier consisting of aluminum with, on one side (A) of the carrier, an interlayer made of aluminum oxide, and with, above the interlayer, an optically active reflection-boosting multilayer system. In order to provide a high-reflectivity composite material of this kind which exhibits improved electrical connectivity when surface-mounting procedures are used, it is proposed that the thickness of the interlayer is in the range 5 nm to 200 nm, and that a layer of a metal or a metal alloy has been applied superficially on side (B) of the carrier that is opposite to the optically active reflection-boosting multilayer system, where the electrical resistivity at 25° C. of the metal or metal alloy is at most 1.2×10.sup.−1 Ωmm.sup.2/m, where the thickness of the layer applied superficially is in the range 10 nm to 5.0 μm.

An optoelectronic device (LV) with a reflective composite material (V) having a carrier (1) consisting of aluminium, having an interlayer (2) composed of aluminium oxide present on one side (A) of the carrier (1) and having a reflection-boosting optically active multilayer system (3) that has been applied via the interlayer (2). The interlayer (2) consisting of aluminium oxide has a thickness (D.sub.2) in the range from 5 nm to 200 nm and that, on the opposite side (B) of the carrier (1) from the reflection-boosting optically active multilayer system (3), a superficial layer (9) of a metal or metal alloy having, at 25° C., a specific electrical resistivity of not more than 1.2*10.sup.−1 Ωmm.sup.2/m has been applied. The thickness (D.sub.9) of the superficially applied layer (9) is in the range from 10 nm to 5.0 μm. For an optoelectronic device (LV), the leadframe (LF) has a metallic material with an aluminium carrier (1), on the surface (A) of which a metallic joining layer (FA) not consisting of aluminium has been applied locally at the bonding site (SP) of an electronic surface-mounted device (SMD) to a wire (D).

The invention concerns a mirror (14), in particular for a photovoltaic cell (10), comprising a stack of layers (SC1, SC2, SC3, SC4, SC5, SC6), the layers (SC1, SC2, SC3, SC4, SC5, SC6) being superimposed along a stacking direction, the stack comprising: a first layer (SC1) of transparent conductive oxide, a second optical reflection layer (SC4) of metal, and a third layer (SC6) of conductive oxide.