An optical sensor system includes a plurality of sets of optical sensors implemented on a substrate, with a plurality of sets of optical filters, wherein a set of optical filters of the plurality of sets of optical filters is associated with a set of optical sensors and a set of optical filters of the plurality of sets of optical filters includes a plurality of optical filters that are arranged in a pattern, with each optical filter of the plurality of optical filters configured to pass light in a different wavelength range of a predefined spectral range. Each set of optical filters operates to provide a bandpass response corresponding to the predefined spectral range and a set of optical filters is located atop an associated set of optical sensors, where at least two sets of optical filters of the plurality of sets of optical filters are configured to provide different bandpass responses. An optical element is associated with a corresponding set of optical sensors, with each rejection filter configured to pass light wavelengths in a predefined spectral range.

An optical filter includes a first mirror that has a first uniform thickness, a second mirror that has a second uniform thickness, and a spacer that is positioned between the first mirror and the second mirror. The spacer has a variable thickness along a first axis of the optical filter. In some implementations, a thickness profile of the spacer, along the first axis, includes one or more portions that have a non-linear slope with an absolute value that is greater than zero.

Provided are a spectral filter, and an image sensor and an electronic device each including the spectral filter. The spectral filter includes a plurality of first filter arrays respectively including a plurality of band filters and a plurality of second filter arrays provided on the plurality of first filter arrays. The plurality of unit filters includes a first reflecting plate, a second reflecting plate provided above the first reflecting plate, and a plurality of cavities provided between the first and second reflecting plates and each having central wavelengths of different bands. Each of the plurality of cavities includes a lower cavity layer, a upper cavity layer, and an intermediate light absorption layer provided between the lower cavity layer and the upper cavity layer. Each of the plurality of band filters is configured to transmit light in a specific band, and two or more of the plurality of cavities are configured to have a same effective refractive index.

An optical filter includes a plurality of optical channels that each have a Fano resonance characteristic. A first optical channel, of the plurality of optical channels, is configured to pass a first portion of a first set of light beams (that are associated with a first wavelength range) and reflect a second portion of the first set of light beams when the first set of light beams falls incident on a particular surface of the first optical channel. A second optical channel, of the plurality of optical channels, is configured to pass a first portion of a second set of light beams (that are associated with a second wavelength range) and reflect a second portion of the second set of light beams when the second set of light beams falls incident on a particular surface of the second optical channel.

The present disclosure relates to an infrared band pass filter, which comprises a first multilayer film. The first multilayer film including a plurality of Si:NH layers and a low refraction index layer. The plurality of low refraction index layers are stacked with Si:NH layers alternatively; wherein the difference between the refraction index of Si:NH layer and the refraction index of the low refraction index layer is greater than 0.5. The infrared band pass filter has a pass band in a wavelength range of 800 nm and 1100 nm, and when the incident angle is changed from 0 degrees to 30 degrees, the center wavelength of the pass band is shifted less than 12 nm, and the infrared band pass filter of the present disclosure can be used to enhance the 3D image resolution when applied to a 3D imaging system.

The present disclosure relates to an optical filter and an infrared image sensing system including the optical filter. The optical filter includes a glass substrate, and an IR film layer and an AR film layer plated on two opposite surfaces of the glass substrate; the IR film layer includes a first refractive-index-material layer, a second refractive-index-material layer, and a third refractive-index-material layer; the refractive index of the third refractive-index-material layer is greater than the refractive index of the first refractive-index-material layer, and the refractive index of the second refractive-index-material layer is greater than the refractive index of the third refractive-index-material layer. The optical filter of the present disclosure has a good anti-reflection effect on near-infrared light so that a high accuracy of face recognition and gesture recognition is ensured.

A light filter and a spectrometer including the light filter are disclosed. The light filter includes a plurality of filter units having different resonance wavelengths, wherein each of the plurality of filter units includes a cavity layer configured to output light of constructive interference, a Bragg reflection layer provided on a first surface of the cavity layer, and a pattern reflection layer provided on a second surface of the cavity layer opposite to the first surface and configured to cause guided mode resonance of light incident on the pattern reflection layer, the pattern reflection layer including a plurality of reflection structures that are periodically arranged.

Aspects of the present disclosure include systems for detecting light from a particle in a flow stream by spectral discrimination. Light detection systems according to certain embodiments include a wavelength separator component configured to propagate light between a first set of linear variable optical filters and a second set of linear variable optical filters where each set of linear variable optical filters is configured to pass light having predetermined sub-spectral ranges and a plurality of photodetectors positioned to detect light from each sub-spectral range across the linear variable optical filters. Systems having a light source for irradiating a particle in a flow stream and a photodetector modulator component for binning data signals generated in a plurality of photodetector channels of the light detection system are also described. Methods for detecting light with the subject systems and kits having one or more components for detecting light according to the subject methods are also provided.

An optical sensor device may include a set of optical sensors. The optical sensor device may include a substrate. The optical sensor device may include a multispectral filter array disposed on the substrate. The multispectral filter array may include a first dielectric mirror disposed on the substrate. The multispectral filter array may include a spacer disposed on the first dielectric mirror. The spacer may include a set of layers. The multispectral filter array may include a second dielectric mirror disposed on the spacer. The second dielectric mirror may be aligned with two or more sensor elements of a set of sensor elements.

An image capture device includes an image detector, at least one lens, and an optical filter which optically coupled between the image detector and the lens and having an optical filter film. The optical filter film includes first and second metal oxide layers which are alternately stacked. A first refractive index of the first metal oxide layer is greater than a second refractive index of the second metal oxide layer. The optical filter film has a thickness ranging from 620 nm to 640 nm. A wavelength spectrum corresponding to light transmittance of the optical filter has a first pass band, a second pass band, and a blocking range between the first and second pass bands. A value corresponding to cut-off wavelength of the first pass band is less than 660 nm, and a value corresponding to cut-on wavelength of the second pass band is greater than 830 nm.