Patent classifications
G02B2006/12038
Waveguide of an SOI structure
A method includes forming a layer made of a first insulating material on a first layer made of a second insulating material that covers a support, defining a waveguide made of the first material in the layer of the first material, covering the waveguide made of the first material with a second layer of the second material, planarizing an upper surface of the second layer of the second material, and forming a single-crystal silicon layer over the second layer.
Photodetectors and terminators including a tapered thickness
Structures for a photodetector or terminator and methods of fabricating a structure for a photodetector or terminator. The structure includes a waveguide core, a light-absorbing layer having a sidewall, and a taper positioned adjacent to the sidewall of the light-absorbing layer. The taper extends laterally from the sidewall of the light-absorbing layer to overlap with the waveguide core, and the taper has a thickness that varies with position relative to the sidewall of the light-absorbing layer. For example, the thickness of the taper may decrease with increasing distance from the sidewall of the light-absorbing layer.
INTEGRATED LIGHT SOURCE MODULE
A integrated light source module includes a planar optical waveguides layer having N light incident ports aligned with respect to each other, M light exit ports aligned with respect to each other, and optical waveguides connected to the N light incident ports and the M light exit ports, and N optical semiconductor devices facing each of the N light incident ports arranged so that light emitted from each of the N optical semiconductor devices can be incident on each of the N light incident ports, wherein light emitted from the M light exit ports can be applied to an object to be irradiated.
Back end of line process integrated optical device fabrication
An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.
OPTICAL DETECTION ELEMENT AND GOI DEVICE FOR ULTRA-SMALL ON-CHIP OPTICAL SENSING, AND MANUFACTURING METHOD OF THE SAME
Various embodiments relate to an optical detection element and GOI (Ge-on-insulator) device for ultra-small on-chip optical sensing, and a manufacturing method of the same. According to various embodiments, the optical detection element and the GOI device may be implemented on a GOI structure comprising a germanium (Ge) layer, and the GOI device may be implemented to have an optical detection element. Specifically, the GOI device may include a GOI structure with a waveguide region comprising a germanium layer, a light source element configured to generate light for the waveguide region, and at least one optical detection element configured to detect light coming from the waveguide region. At least one slot configured to collect light from the light source element may be formed in the germanium layer in the waveguide region. The light source element may generate light so as to be coupled to the germanium layer in the waveguide region. The optical detection element may detect heat generated as light is propagated from the germanium layer.
Hologram light guide plate with plurality of layers and head mount display using hologram light guide plate
It is an objective of this disclosure to protect a highly transparent hologram light guide plate from water vapor and ultraviolet ray, thereby suppressing deterioration of the hologram light guide plate even when employed in a head mount display used in outdoor environments. A hologram light guide plate according to this disclosure comprises a protection layer that protects a hologram layer and an intermediate layer that is placed between a glass layer and the protection layer, wherein the glass layer and the hologram layer form a transfer layer that transfers image light. The intermediate layer causes the image light to transfer only in the transfer layer in a section from an input area of the image light to an output area of the image light.
SUBSTRATE AND METHOD FOR MODIFYING AT LEAST ONE REGION OF A SURFACE OR A PORTION OF A SUBSTRATE
A method for physically modifying at least one of at least one region of a surface of a substrate and at least one portion of the substrate, the substrate comprising a multicomponent glass, the method comprising the steps of: providing an apparatus and the substrate, the apparatus including a radiation source configured for generating a particle beam; feeding the substrate to the apparatus and applying a vacuum; modifying at least one of the at least one region of the surface of the substrate and the at least one portion of the substrate by an exposure to the particle beam.
Optical Waveguide
In a waveguide having a given Δ, a low-loss waveguide bend is realized while the curvature radius is kept small. In an optical waveguide in which a first waveguide and a second waveguide are connected, a clothoid tapered waveguide bend is inserted between the first waveguide and the second waveguide. In the clothoid tapered waveguide bend, the waveguide width continuously changes from a first waveguide width at a connection point of the first waveguide to a second waveguide width at a connection point of the second waveguide, the curvature radius continuously changes from a first curvature radius at the connection point of the first waveguide to a second curvature radius at the connection point of the second waveguide, the first waveguide width and the second waveguide width are different from each other, and the first curvature radius and the second curvature radius are different from each other.
Biased total thickness variations in waveguide display substrates
A plurality of waveguide display substrates, each waveguide display substrate having a cylindrical portion having a diameter and a planar surface, a curved portion opposite the planar surface defining a nonlinear change in thickness across the substrate and having a maximum height D with respect to the cylindrical portion, and a wedge portion between the cylindrical portion and the curved portion defining a linear change in thickness across the substrate and having a maximum height W with respect to the cylindrical portion. A target maximum height D.sub.t of the curved portion is 10.sup.−7 to 10.sup.−6 times the diameter, D is between about 70% and about 130% of D.sub.t, and W is less than about 30% of D.sub.t.
OPTICAL WAVEGUIDE FORMED WITHIN IN A GLASS LAYER
Embodiments described herein may be related to apparatuses, processes, and techniques directed an optical waveguide formed in a glass layer. The optical waveguide may be formed by creating a first trench extending from a surface of the glass layer, and then creating a second trench extending from the bottom of the first trench, then subsequently filling the trenches with a core material which may then be topped with a cladding material. Other embodiments may be described and/or claimed.