Various embodiments disclosed relate to photonic assemblies. The present disclosure includes methods for packaging a photonic assembly, including attaching a bridge die to a glass substrate, attaching an electronic integrated circuit die to the glass substrate and the bridge die, attaching a photonic integrated circuit die to the glass substrate and the bridge die, bonding a coupling adapter to the glass substrate and in situ forming a waveguide in the coupling adapted, the waveguide aligning with the photonic integrated circuit die.

Embodiments disclosed herein include electronic packages with photonics integrated circuits (PICs). In an embodiment, an electronic package comprises a glass substrate with a first recess and a second recess. In an embodiment, a PIC is in the first recess. In an embodiment, an optics module is in the second recess, and an optical waveguide is embedded in the glass substrate between the first recess and the second recess. In an embodiment, the optical waveguide optically couples the PIC to the optics module.

An optoelectronic assembly is disclosed, comprising a substrate having a core comprised of glass, and a photonic integrated circuit (PIC) and an electronic IC (EIC) coupled to a first side of the substrate. The core comprises a waveguide with a first endpoint proximate to the first side and a second endpoint exposed on a second side of the substrate orthogonal to the first side. The first endpoint of the waveguide is on a third side of the core parallel to the first side of the substrate. The substrate further comprises an optical via aligned with the first endpoint, and the optical via extends between the first side and the third side. In various embodiments, the waveguide is of any shape that can be inscribed by a laser between the first endpoint and the second endpoint.

A photonic module, comprising a first waveguide; a second waveguide, disposed on an opposing side of the first waveguide to a substrate; and, a coupling section. One of the first waveguide and the second waveguide is formed of crystalline silicon. The other of the first waveguide and the second waveguide is formed of amorphous silicon. The coupling section is configured to couple light between the first waveguide and the second waveguide. Such a silicon photonic module has enhanced coupling and transmission properties in contrast to conventional modules.

A method of making a photonic integrated circuit (PIC) is provided. The method comprises depositing a functional resist material layer over a substrate, disposing and pressing a stamp with a plurality of nanopatterns into the functional resist material for a period of time, and removing the stamp from the functional resist material to provide nanofeatures that are inverted versions of the nanopatterns, wherein the nanofeatures form one or more optical elements.

A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

Embodiments of a thermally modulated photonic switch are presented herein. One embodiment comprises a topology-optimized structure that includes dispersed silicon and silicon dioxide. This topology-optimized structure includes an input waveguide, a first output waveguide, and a second output waveguide. The topology-optimized structure routes a light beam from the input waveguide to the first output waveguide, when the topology-optimized structure is at a first predetermined temperature that causes a refractive index of the silicon in the topology-optimized structure to assume a first predetermined value, and the topology-optimized structure routes a light beam from the input waveguide to the second output waveguide, when the topology-optimized structure is at a second predetermined temperature that causes the refractive index of the silicon in the topology-optimized structure to assume a second predetermined value that is distinct from the first predetermined value.

Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

The glass-based THz optical waveguides (10) disclosed herein are used to guide optical signals having a THz frequency in the range from 0.1 THz to (10) THz and include a core (20) surrounded by a cladding (30). The core has a diameter D1 in the range from (30) μm to 10 mm and is made of fused silica glass having a refractive index n.sub.1. The cladding is made of either a polymer or a glass or glass soot and has a refractive index n.sub.2<n.sub.1 and an outer diameter D2 in the range from 100 μm to 12 mm. The THz optical waveguides can be formed using processes that are extensions of either fiber, ceramic and soot-based technologies. In an example, the THz waveguides have a dielectric loss D.sub.f<0.005 at 100 GHz.

A method for manufacturing an optical fiber includes: a coating step of forming a first layer by applying a first ultraviolet ray curable resin composition onto a glass fiber, and then, of forming a second layer by applying a second ultraviolet ray curable resin composition onto the first layer; a first irradiation step of curing the first layer and the second layer by irradiating the first layer and the second layer with an ultraviolet ray, and of obtaining the optical fiber including a primary resin layer and a secondary resin layer; and a second irradiation step of irradiating the optical fiber with an ultraviolet ray at an illuminance of less than or equal to one tenth of an illuminance in the first irradiation step for an irradiation time of longer than or equal to 10 times an irradiation time in the first irradiation step.