In an example, an integrated optical circuit (IOC) includes a first substrate formed of a first material and a first waveguide formed of a second material and positioned on the first substrate. The first waveguide includes a plurality of branches and is configured to polarize light beams that propagate through the first waveguide. The IOC further includes a second substrate formed of a third material, the second substrate coupled to or positioned on the first substrate. The IOC further includes a plurality of straight waveguides formed in the second substrate, each of the plurality of straight waveguides optically coupled to a respective branch of the plurality of branches of the first waveguide. The IOC further includes a plurality of electrodes positioned proximate to the plurality of straight waveguides, the plurality of electrodes configured to modulate the phase of light beams that propagate through the plurality of straight waveguides.

Electro-optic devices for classical and quantum microwave photonics are provided. In various embodiments, a device comprises: a waveguide; a first ring resonator; a second ring resonator, the second ring resonator evanescently coupled to the first ring resonator and to the waveguide; a first pair of electrodes, one of the first pair of electrodes disposed within the first ring resonator and the other of the first pair of electrodes disposed without the first ring resonator; a second pair of electrodes, one of the second pair of electrodes disposed within the second ring resonator and the other of the second pair of electrodes disposed without the second ring resonator; a microwave source electrically coupled to the first and second pairs of electrodes; a bias port electrically coupled to the first and second pairs of electrodes and configured to sweep a frequency band.

A groove having any length is manufactured in a quartz-based waveguide chip without limitation of a chip size. A marker indicating a planned cutting line extending from a connection end surface of a quartz-based waveguide chip in an in-chip plane direction is formed in advance by processing a core layer of the waveguide of the quartz-based waveguide chip, an irradiation position of laser light is aligned with a position of a starting point of the marker in a state where quartz-based waveguide chip is placed on a stage, and a groove is manufactured in the connection end surface of the quartz-based waveguide chip by moving the stage in the extending direction of the marker while irradiating the quartz-based waveguide chip with the laser light from an upper side.

With a wavelength conversion device based on a nonlinear optical effect, when arrayed waveguides including an intended nonlinear waveguide are fabricated, unwanted slab waveguides are inevitably formed. The slab waveguides can cause an erroneous measurement in the selection of a waveguide having desired characteristics from the arrayed waveguides. The erroneous measurement can lead to redoing steps for fabricating the wavelength conversion device and a decrease in the yield and inhibit the evaluation of the characteristics in selection of the waveguide and the subsequent fabrication of the wavelength conversion device from being efficiently performed. A wavelength conversion device according to the present invention includes a plurality of waveguides formed on a substrate, and a plurality of slab waveguides that are arranged substantially in parallel with and spaced apart from the plurality of waveguides, and a guided light attenuator is formed in each of the slab waveguides. The guided light attenuators allow efficient selection of a waveguide having desired optical characteristics from the plurality of waveguides. The light attenuation by the guided light attenuators can be changed in steps for fabricating the wavelength conversion device.

An optical device is described. At least a portion of the optical device includes ferroelectric non-linear optical material(s) and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.

An optical waveguide device including a rib-type optical waveguide 2 formed of a material having an electro-optic effect, and a reinforcing substrate 1 that supports the rib-type optical waveguide, one end of the rib-type optical waveguide 2 has a tapered portion 20, structures 4 are provided that are disposed apart from the tapered portion so as to sandwich the tapered portion and are disposed on the reinforcing substrate 1, an upper substrate is disposed above the tapered portion and the structures, and an adhesive layer is disposed in a space sandwiched between the upper substrate and the structures.

According to examples, a tunable visible light source may include a periodically poled lithium niobate (PPLN) waveguide and a control mechanism to optimize the phase-matching of the PPLN waveguide in response to an input signal with a varied wavelength. The control mechanism may include an electro-optic (EO) tuning mechanism, a microheater-based thermo-optic (TO) control mechanism, and/or an acousto-optic (AO) control mechanism. The control mechanisms may, respectively, generate an electric field, heat, or an acoustic wave to affect a change in refractive index of the PPLN waveguide and thereby optimize the conversion efficiency to maximize the output power of the output wavelength of the PPLN waveguide as the input wavelength is tuned.

A hybrid photonics device package is described. The hybrid photonics device package includes an electro-optic integrated circuit and a photonics integrated circuit. The electro-optic integrated circuit includes an optical structure and an electrode on a first substrate. The optical structure has a thin film electro-optic layer including lithium. The photonics integrated circuit includes a second substrate and a photonics component on the second substrate. The photonics component and the optical structure are optically coupled. One of the electro-optic integrated circuit and the photonics integrated circuit is mounted on an other of the electro-optic integrated circuit and the photonics integrated circuit.

A photonic integrated circuit may include a substrate and an optical waveguide integrated with the substrate. The optical waveguide may include a bend section, wherein a bend shape of the bend section is defined by a curvature function to suppress waveguide mode conversion.

A CMOS compatible material platform for photonic integrated circuitry is invented. The material platform has SiO2 as cladding material, at least a bottom layer made of moderate refractive index material(s) fabricated first on a unpatterned SOI wafer, a bonded system substrate, a set of photonic circuitry made within a SOI layer of the SOI wafer after its substrate and BOX layer removed, and some coupling devices enabling light travelling between the devices made within these two layers. A solution to provide IIIV laser diodes boned and embedded in the system substrate is also proposed. The invention provides a great material platform to offer full set of photonic building blocks for all sort of different applications such as photonic circuitry for optical neural network, quantum computing, telecommunication, data communication, optical switching, optical sensing, passive and/or active Si optical interposer with its size even bigger than lithography step field size.