Provided are three dimensional, stretchable, optical sensor networks that can localize deformations. The devices described herein are suitable for uses in soft robots to determine the position of external contact, such as touching, and possibly internal deformations that may be caused by actuation. Sensor networks of the present disclosure contain a substrate, such as a 3D lattice, and cores having a cladding, such as air. Light passes through the cores and upon deformation of the substrate, cores may come into contact, allowing light to couple between cores due to frustrated total internal reflection. The resulting changes in intensity in the cores can be used to determine the placement and magnitude of deformation.

A photonic circulator deployed on a chip-scale light-detection and ranging (LiDAR) device includes a first arm that includes a first waveguide that is bonded onto a first member at a first bonding region, and a second arm that includes a second waveguide that is bonded onto a second member at a second bonding region. A first thermo-optic phase shifter is arranged on the first member and collocated with the first waveguide, and a second thermo-optic phase shifter is arranged on the second member and collocated with the second waveguide. The magneto-optic material and the first thermo-optic phase shifter of the first member cause a first phase shift in a first light beam travelling through the first waveguide, and the magneto-optic material and the second thermo-optic phase shifter of the second member cause a second phase shift in a second light beam travelling through the second waveguide.

Various embodiments relate to an optical detection element and GOI (Ge-on-insulator) device for ultra-small on-chip optical sensing, and a manufacturing method of the same. According to various embodiments, the optical detection element and the GOI device may be implemented on a GOI structure comprising a germanium (Ge) layer, and the GOI device may be implemented to have an optical detection element. Specifically, the GOI device may include a GOI structure with a waveguide region comprising a germanium layer, a light source element configured to generate light for the waveguide region, and at least one optical detection element configured to detect light coming from the waveguide region. At least one slot configured to collect light from the light source element may be formed in the germanium layer in the waveguide region. The light source element may generate light so as to be coupled to the germanium layer in the waveguide region. The optical detection element may detect heat generated as light is propagated from the germanium layer.

An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.

A compact silicon waveguide mode converter, a dielectric meta-surface structure based on periodical oblique subwavelength perturbations, including a top silicon structure with oblique subwavelength perturbations etched in certain periods with period length of Λ, a duty cycle and an oblique angle θ on the SOI substrate. The invention adopts an all-dielectric meta-surface structure with oblique subwavelength perturbation, which can achieve a compact mode conversion from fundamental mode to arbitrary high-order mode of silicon waveguide, and can improve the optical communication capacity greatly.

Configurations for a modal interference device used for wavelength locking are disclosed. The modal interference device may be an interference device that includes an input waveguide, an interference waveguide, and an output waveguide. A fundamental mode of light may be launched into the input waveguide and the interference waveguide may receive the fundamental mode and generate a higher order mode of light, where the two modes of light may be superimposed while propagating through the interference waveguide. The two modes of light may be received at an output waveguide that collapses the two modes into a single mode and generates an output signal corresponding to the interference between the two modes of light. The output signal may be used to wavelength lock a measured wavelength to a target wavelength. The multiple output waveguides may produce output signals that have dead zones that do not align with one another for any wavelength in the wavelength range of interest.

A waveguide is provided. The waveguide having a first core, a second core spaced apart from and parallel with the first core, and a cladding surrounding the first core and the second core. An interstitial portion of the cladding is located between the first core and the second core. A first region of the first core adjacent to the cladding or of the cladding adjacent to the first core is color dyed.

The invention relates to an optical modulator. The optical modulator comprising: a substrate; an electro-optical material layer formed on a predetermined region of the substrate; a buffer layer formed on the substrate which is provided so as to cover the electro-optical material layer; and an electrode formed on the buffer layer, and the electro-optical material layer has a RF portion optical waveguide which is applied with a modulation signal and is patterned, and a DC portion optical waveguide which is applied with a DC voltage and is patterned, the electrode has an RF portion electrode formed on the buffer layer where the RF portion optical waveguide is located and a DC portion electrode formed on the buffer layer where the DC portion optical waveguide is located, the film thickness of the DC portion electrode is smaller than the film thickness of the RF portion electrode. According to the present invention, an optical modulator which can suppress electrical crosstalk caused by the noise signal generated in the DC portion electrode and can improve high-frequency characteristics and achieve a widening of bandwidth of the optical frequency band in the high-frequency signals propagating in the RF portion electrode is provided.

A photonic integrated circuit (PIC) in which some optical waveguides have laterally tilted waveguide cores used to implement passive polarization-handling circuit elements, e.g., suitable for processing polarization-division-multiplexed optical communication signals. Different sections of such waveguide cores may have continuously varying or fixed lateral tilt angles. Different polarization-handling circuit elements can be realized, e.g., using different combinations of end-connected untilted and laterally tilted waveguide-core sections. In some embodiments, laterally tilted waveguide cores may incorporate multiple-quantum-well structures and be used to implement active circuit elements. At least some embodiments beneficially lend themselves to highly reproducible fabrication processes, which can advantageously be used to achieve a relatively high yield of the corresponding PICs during manufacture.

An optical system has a LIDAR chip that includes a switch configured to direct an outgoing LIDAR signal to one of multiple different alternate waveguides. The system also includes a redirection component configured to receive the outgoing LIDAR signal from any one of the alternate waveguides. The redirection component is also configured to redirect the received outgoing LIDAR signal such that a direction that the outgoing LIDAR signal travels away from the redirection component changes in response to changes in the alternate waveguide to which the optical switch directs the outgoing LIDAR signal.