A MEMs and/or NEMs measurement system includes a resonant assembly comprising: an input and an output, a plurality of N optical resonators Ri indexed i each having a resonance wavelength λr,i, at least one waveguide to which the optical resonators are coupled, at least one element coupled to each resonator Ri, an emission device, a modulation device, an injection device configured to superpose the N light beams to form an input beam and to inject the beam as input to the resonant assembly, at least one detector configured to detect a light beam arising from the beam at the output of the resonant assembly and to generate an output signal, a demodulation device comprising at least N synchronous-detection demodulation modules.

A photonic integrated circuit includes a photonic device. The photonic device includes an input region configured to receive an input signal including a plurality of multiplexed channels. The photonic device includes a metastructured dispersive region structured to partially demultiplex the input signal into an output signal and a throughput signal. The output signal includes a channel of the multiplexed channels. The throughput signal includes the remaining channels of the multiplexed channels. The photonic device includes an output region and a throughput region optically coupled with the metastructured dispersive region to receive the output signal and the throughput signal, respectively. The metastructured dispersive region includes a heterogeneous distribution of a first material and a second material that structures the metastructured dispersive region to partially demultiplex the input signal into the output signal and the throughput signal.

Embodiments described herein may be related to apparatuses, processes, and techniques directed an optical waveguide formed in a glass layer. The optical waveguide may be formed by creating a first trench extending from a surface of the glass layer, and then creating a second trench extending from the bottom of the first trench, then subsequently filling the trenches with a core material which may then be topped with a cladding material. Other embodiments may be described and/or claimed.

A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

A waveguiding structure (500) includes one or more fluid channels (518) intersected by a waveguide (514). An aperture layer (570) of the waveguide structure includes an array of apertures adjacent to the one or more fluid channels, such that the array of apertures may allow emission signals from analytes in the fluid channels to pass through the aperture layer for detection. The aperture layer may be etched using a first etching step, while an air-gap in a substrate of the waveguiding structure may be etched using a second etching step, wherein the first etching step has a higher level of precision than the second etching step. The array of apertures may comprise one or more one-dimensional signature patterns of apertures associated with specific fluid channels of the device, such that the signature patterns may be used to demultiplex signals and to correlate a signal with one of the plurality of channels.

Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide. Thus, the heating element is usable for thermally tuning the closed-curve waveguide via the closed-curve thermal coupler to minimize any temperature-dependent resonance shift (TDRS).

Described herein are IC devices that include hybrid lasers formed with a bonding layer. Hybrid lasers include an active light-emitting region coupled to a waveguide. In a hybrid laser, the waveguide and the light-emitting regions are formed separately from different materials, e.g., the waveguide is a single-crystal silicon, and the light-emitting region includes III-V semiconductors. An amorphous group IV material, such as silicon or germanium, is advantageously used to bond the light-emitting region to the waveguide.

A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

An optical waveguide includes a first waveguide core, a second waveguide core, a first subwavelength multilayer cladding, a second subwavelength multilayer cladding and a third subwavelength multilayer cladding. The first waveguide core and the second waveguide core have a width (w) and a height (h). The first waveguide core is disposed between the first subwavelength multilayer cladding and the second subwavelength multilayer cladding. The second waveguide core is disposed between the second subwavelength multilayer cladding and the third subwavelength multilayer cladding. Each subwavelength multilayer cladding has a number (TV) of alternating subwavelength ridges having a periodicy (A) and a filling fraction (p). A total coupling coefficient (|/c|) of the first waveguide core and the second waveguide core is from 10 to 0.

Disclosed is a photonic integrated circuit (PIC) structure including: a first waveguide with a first main body and a first end portion, which is tapered; and a second waveguide with a second main body and a second end portion, which has two branch waveguides that are positioned adjacent to opposing sides, respectively, of the first end portion of the first waveguide and that branch out from the second main body, thereby forming a V, U or similar shape. The arrangement of the two branch waveguides of the second end portion of the second waveguide relative to the tapered first end portion of the first waveguide allows for mode matching conditions to be met at multiple locations at the interface between the waveguides, thereby creating multiple signal paths between the waveguides and effectively reducing the light signal power density along any one path to prevent or at least minimize any power-induced damage.