A photonic integrated circuit (PIC) includes one or more couplers to interface a light source with the PIC, a splitter directly coupled to the one or more couplers at a coupling point of the PIC, a modulator to receive light from the couplers, and a connecting waveguide to connect the splitter to the modulator. The waveguide may be a rib waveguide. The PIC may be integrated with devices such as a CWDM or a PSM device, and may provide improved performance and lower attention for high optical power applications.

An optical waveguide package includes a substrate having a first surface, and an optical waveguide layer including a cladding located on the first surface and a core located in the cladding. The substrate includes a first portion and a second portion being in contact with the cladding. The second portion bonds to the cladding with a higher bonding strength than the first portion.

A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

IC chip package with silicon photonic features integrated onto an interposer along with electrical routing redistribution layers. An active side of an IC chip may be electrically coupled to a first side of the interposer through first-level interconnects. The interposer may include a core (e.g., of silicon or glass) with electrical through-vias extending through the core. The redistribution layers may be built up on a second side of the interposer from the through-vias and terminating at interfaces suitable for coupling the package to a host component through second-level interconnects. Silicon photonic features (e.g., of the type in a photonic integrated circuit chip) may be fabricated within a silicon layer of the interposer using high temperature processing, for example of 350° C., or more. The photonic features may be fabricated prior to the fabrication of metallized redistribution layers, which may be subsequently built-up within dielectric material(s) using lower temperature processing.

Embodiments relate to a polymer waveguide including a substrate, a cladding layer made of a first polymer, formed on the substrate, wherein a first monomer is polymerized into the first polymer, and the cladding layer has a groove for the waveguide by removing part of the cladding layer, and a core accommodating graphene therein, formed on the groove, a method for manufacturing the same, and a passively mode-locked laser based on the polymer waveguide.

A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

A photonic integrated circuit including first and second opto-electronic devices that are fabricated on a semiconductor wafer having an epitaxial layer stack including an n-type indium phosphide-based contact layer that is provided with at least one selectively p-type doped tubular-shaped region for providing an electrical barrier between respective n-type contact regions of the first and second opto-electronic devices that are optically interconnected by a passive optical waveguide that is fabricated in a non-intentionally doped waveguide layer including indium gallium arsenide phosphide, the non-intentionally doped waveguide layer being arranged on top of the n-type contact layer, wherein a first portion of the at least one selectively p-type doped tubular-shaped region is arranged underneath the passive optical waveguide between the first and second opto-electronic devices. An opto-electronic system including the photonic integrated circuit.

An optical system includes a tunable laser that generates an optical signal at an output that is wavelength tunable. A wavelength router directs particular wavelength bands of the optical signal to particular ones of the plurality of outputs. An optical emitter emits an optical beam at an output, wherein tuning the tunable laser steers the emitted beam.

A photonic circulator deployed on a chip-scale light-detection and ranging (LiDAR) device includes a first arm that includes a first waveguide that is bonded onto a first member at a first bonding region, and a second arm that includes a second waveguide that is bonded onto a second member at a second bonding region. A first thermo-optic phase shifter is arranged on the first member and collocated with the first waveguide, and a second thermo-optic phase shifter is arranged on the second member and collocated with the second waveguide. The magneto-optic material and the first thermo-optic phase shifter of the first member cause a first phase shift in a first light beam travelling through the first waveguide, and the magneto-optic material and the second thermo-optic phase shifter of the second member cause a second phase shift in a second light beam travelling through the second waveguide.