A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

A semiconductor optical device includes: a base configured to intersect with a first direction; a first protrusion configured to protrude from the base in the first direction, the first protrusion including a planar lightwave circuit including: a core layer; and a cladding layer surrounding the core layer; a second protrusion configured to protrude from the base in the first direction and arranged along the first protrusion in a second direction intersecting with the first direction, a height of the second protrusion from the base in the first direction being lower than a height of the first protrusion; an optical semiconductor element placed on a facet of the second protrusion in the first direction and optically connected to the core layer; and a marker provided on the second protrusion in a manner exposed on the facet, the marker being made of a same material as the core layer.

The invention relates to a process for fabricating an optoelectronic system (1) comprising an optical device (60) coupled to an integrated photonic circuit (20), comprising producing a lower waveguide (13.1) from the thin single-crystal-silicon layer (13) of a first SOI substrate (10), then joining a second SOI substrate (40) thereto and producing an intermediate waveguide (43.1) from the thin single-crystal-silicon layer (43) of the second SOI substrate (40).

In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.

Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical amplifier (SOA) may be positioned in a signal pathway between the optical port and the transmit module or the receive module. Other embodiments may be described and/or claimed.

An optoelectronic device includes a substrate and at least three emitters, which are disposed on the substrate and are configured to emit respective beams of light. A plurality of waveguides are disposed on the substrate and have respective input ends coupled to receive the beams of light from respective ones of the emitters, and curve adiabatically from the input ends to respective output ends of the waveguides, which are arranged on the substrate in an array having a predefined pitch. Control circuitry is configured to apply a temporal modulation independently to each of the beams of light.

An optoelectronic assembly is disclosed, comprising a substrate having a core comprised of glass, and a photonic integrated circuit (PIC) and an electronic IC (EIC) coupled to a first side of the substrate. The core comprises a waveguide with a first endpoint proximate to the first side and a second endpoint exposed on a second side of the substrate orthogonal to the first side. The first endpoint of the waveguide is on a third side of the core parallel to the first side of the substrate. The substrate further comprises an optical via aligned with the first endpoint, and the optical via extends between the first side and the third side. In various embodiments, the waveguide is of any shape that can be inscribed by a laser between the first endpoint and the second endpoint.

A device providing efficient transformation between an initial optical mode and a second optical mode includes first, second and third elements fabricated on a common substrate. The first element includes first and second active sub-layers supporting initial and final optical modes with efficient mode transformation therebetween. The second element includes a passive waveguide structure supporting a second optical mode. The third element, at least partly butt-coupled to the first element, includes an intermediate waveguide structure supporting an intermediate optical mode. If the final optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in the second or third elements facilitates efficient transformation between the intermediate optical mode and the second optical mode. Precise alignment of sub-elements formed in one of the elements, relative to sub-elements formed in another one of the elements, is defined using lithographic alignment marks.

An optical device for an optical sensor comprises a gain element of a semiconductor laser, a wavelength selective feedback element, and a sensing element. At least part of the wavelength selective feedback element and the sensing element are arranged in a common sensor package. The gain element is arranged to generate and amplify an optical signal. The gain element and the wavelength selective feedback element form at least part of an external cavity of the semiconductor laser, thereby providing a feedback mechanism to sustain a laser oscillation depending on the optical signal. The wavelength selective feedback element is arranged to couple out a fraction of the optical signal and direct said fraction of the optical signal towards the sensing element to probe a physical property of the sensing element.

A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.