A photonic chip including an optical coupler capable of transferring an optical signal between a first waveguide made of III-V material and a second waveguide made of silicon, this optical coupler including a first extension made of III-V material which extends the core of the first waveguide, a second extension made of silicon which extends the core of the second waveguide, and a SiGe inclusion buried inside of the second extension, this inclusion being made of SiGe whose chemical formula is Si.sub.1-xGe.sub.x, where x is in the range between 0.2and 0.5, and being optically coupled, on a first side, to the first waveguide and, on a second opposite side, to the second waveguide.

An optoelectronic package is provided. The optoelectronic package includes a photonic component. The photonic component has a bottom surface and a lateral surface. The lateral surface of the photonic component includes a light coupling region and a non-light coupling plane. The non-light coupling plane contacts the bottom surface. The light coupling region and the non-light coupling plane are not aligned.

An optical device including a waveguide grating is disclosed. The optical device may be used as an optical cavity for a laser device, for instance, of an integrated laser device for light detection and ranging (Lidar) applications. In one aspect, the optical device includes a waveguide grating for guiding light, a heating layer provided beneath or above the waveguide grating, and two or more contacts for passing a current through the heating layer, to generate heat in the heating layer. The heating layer is thermally coupled to the waveguide grating and is optically decoupled from the waveguide grating.

Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.

An integrated optical device includes: a mounting base; an optical semiconductor device which is provided on a surface of the mounting base; a substrate; and an optical waveguide which is provided on a surface of the substrate, wherein an incident surface of the optical waveguide is disposed to face an emission surface of the optical semiconductor device, wherein light emitted from the optical semiconductor device is able to be incident to the optical waveguide, wherein the optical semiconductor device is connected to the mounting base through a metal layer, wherein the mounting base is connected to the substrate through the other metal layer, and wherein a mounting base bottom surface on the side opposite to a surface of the mounting base and a substrate bottom surface on the side opposite to a surface of the substrate are provided on the substantially same plane.

A semiconductor photonic package can include a laser module and a photonic integrated circuit (PIC), each having a different operating temperature. The two modules are placed on a common substrate allowing accurate optical alignment. In addition, a thermal barrier is integrated into the substrate between the laser module and the PIC to provide thermal stability, especially to the laser module. The substrate can include a housing with good electrical conductivity or an optical substrate and housing. The thermal barrier is integrated into the optical substrate, the housing, or both. The thermal barrier in the optical substrate can be a cutout that does not divide the optical substrate into two separate pieces.

A silicon photonics integrated chip includes the transmit-input waveguide unit, the splitter unit, the modulator unit, the transmit-output waveguide unit, the receive-input waveguide unit and the receiving detector unit integrated inside the chip. A silicon photonics multi-channel parallel optical component and a coupling method of the silicon photonics multi-channel parallel optical component are also provided. The integrated silicon photonics chip is adopted, the transmitting part still uses two-way DC laser group, the receiving chip is integrated inside the silicon photonics chip, and the optical interface adopts the mature FA-MPO in the industry. It has the advantages of mature technology, high degree of integration, relatively low cost, fewer coupling processes, etc., it is one of the advantageous choices for rates above 400 G.

An optical assembly may include a platform disposed within a housing that has a limited space. The platform may be tilted by a first angle to fit a fiber array into the limited space of the housing. The optical assembly may also include a silicon photonics device mounted on the tilted platform. The silicon photonics device may include a grating coupler. The optical assembly may also include the fiber array directly coupled to the grating coupler on the silicon photonics device at a coupling position that deviates from a vertical coupling position by a second angle.

An apparatus is includes a near field transducer positioned adjacent a media-facing surface and at the end of a waveguide having at least one core layer and a cladding layer. The apparatus also includes at least one optical reflector positioned adjacent opposing cross-track edges of the near field transducer and/or adjacent a down-track side of the near-field transducer.

A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.