A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

An optical module configured to control a peer to peer transaction includes a silicon photonics substrate, memory formed on the silicon photonics substrate and configured to store a private key, application circuitry formed on the silicon photonics substrate and coupled to the memory, the application circuitry configured to receive, via an external interface, an electrical signal carrying instructions for executing a transaction, verify the transaction using the private key stored in the memory, and selectively generate a transaction message including information for completing the transaction, and optical communication circuitry formed on the silicon photonics substrate and responsive to the application circuitry, the optical communication circuitry configured to generate an optical signal based on the transaction message and transmit the optical signal to at least one remote entity.

Photonic devices having Al.sub.1-xSc.sub.xN and Al.sub.yGa.sub.1-yN materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x≤0.45 and 0≤y≤1.

A monolithic PIC including a monolithic laser formed in/on a platform and a polymer modulator monolithically built onto the platform and optically coupled to the laser. The modulator includes a first cladding layer, a passive core region with a surface abutting a surface of the first cladding layer, the core region extending to define an input and an output for the modulator. A shaped electro-optic polymer active component has a surface abutting a surface of a central portion of the core region. The active component is polled to align dipoles and promote modulation of light and has a length that extends only within a modulation area defined by modulation electrodes. A second cladding layer encloses the active component and is designed to produce adiabatic transition of light waves traveling in the core region into the active component to travel the length thereof and return to the core region.

The invention describes an integrated photonics platform comprising a plurality of at least three vertically-stacked waveguides which enables light transfer from one waveguide of the photonic structure into another waveguide by means of controlled tunneling method. The light transfer involves at least three waveguides wherein light power flows from initial waveguide into the final waveguide while tunneling through the intermediate ones. As an exemplary realization of the controlled tunneling waveguide integration, the invention describes a photonic integrated structure consisting of laser guide as upper waveguide, passive guide as middle waveguide, and modulator guide as lower waveguides. Controlled tunneling is enabled by the overlapped lateral tapers formed on the same or different vertical waveguide levels. In the further embodiments, the controlled tunneling platform is modified to implement wavelength-(de)multiplexing, polarization-splitting and beam-splitting functions.

According to various embodiments, there is provided an optical device including a first waveguide configured to guide a light wave along a longitudinal axis; a first grating at least partially formed in the first waveguide, the first grating arranged away from the longitudinal axis in a first direction; and a second grating at least partially formed in the first waveguide, the second grating arranged away from the longitudinal axis in a second direction; wherein the second direction is different from the first direction.

According to the present invention, a semiconductor device includes a substrate comprising a front end face, a rear end face and side faces, a plurality of semiconductor lasers provided on the substrate, a forward optical multiplexer to multiplex forward output light of the plurality of semiconductor lasers and output the multiplexed light to the front end face, a backward optical multiplexer to multiplex backward output light of the plurality of semiconductor lasers and output the multiplexed light to the rear end face and a plurality of backward waveguides connected to an output section of the backward optical multiplexer, wherein the plurality of backward waveguides includes a main waveguide disposed at a center of the output section and a plurality of lateral waveguides disposed on both sides of the main waveguide to bend toward the side faces and output light from the side faces diagonally to the side faces.

An optical device including a waveguide grating is disclosed. The optical device may be used as an optical cavity for a laser device, for instance, of an integrated laser device for light detection and ranging (Lidar) applications. In one aspect, the optical device includes a waveguide grating for guiding light, a heating layer provided beneath or above the waveguide grating, and two or more contacts for passing a current through the heating layer, to generate heat in the heating layer. The heating layer is thermally coupled to the waveguide grating and is optically decoupled from the waveguide grating.

The Hybrid Photonic Plasmonic Interconnect (HyPPI) combines both low loss photonic signal propagation and passive routing with ultra-compact plasmonic devices. These optical interconnects therefore uniquely combine fast operational data-bandwidths (in hundreds of Gbps) for light manipulation with low optical attenuation losses by hybridizing low loss photonics with strong light-matter-interaction plasmonics to create, modulate, switch and detect light efficiently at the same time. Initial implementations were considered for on-chip photonic integration, but also promising for free space or fiber-based systems. In general two technical options exist, which distinguished by the method the electric-optic conversion is executed: the extrinsic modulation method consists of an continuous wave source such as an LED or laser operating at steady power output, and signal encoding is done via an electro-optic modulator downstream of the source in the interconnect. In contrast, in the intrinsic method, the optical source is directly amplitude modulated.