An optical waveguide includes a core region extending substantially along a lengthwise centerline of the optical waveguide, a first cladding region formed along a first side of the core region, and a second cladding region formed along a second side of the core region. The optical waveguide includes a first diode segment and a second diode segment that each include respective portions of the core region, the first cladding region, and the second cladding region. The second diode segment is contiguous with the first diode segment. The first diode segment forms a first diode across the optical waveguide such that a first intrinsic electric field extends across the first diode segment in a first direction, and the second diode segment forms a second diode across the optical waveguide such that a second intrinsic electric field extends across the second diode segment in a second direction opposite the first direction.

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the first level includes crystalline silicon; an oxide layer disposed between the first level and the second level; and a plurality of electromagnetic modulators, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

A hybrid electrical and optic system-on-chip (SOC) device configured for both electrical and optic communication includes a substrate, an electrical device configured for electrical communication arranged on the substrate, a photonics device configured for optic communication arranged on the substrate, and a self-test module arranged on the substrate. The self-test module is configured to receive a loop-back signal indicative of an optical signal output from the photonics device and calibrate the photonics device based on the loop-back signal.

The invention relates to a process for fabricating a photonic chip including steps of transferring a die to an actual transfer region of the receiving substrate comprising a central region entirely covered by the die and a peripheral region having a free surface, a first waveguide lying solely in the central region, and a second waveguide lying in the peripheral region; depositing an etch mask on a segment of the die and around the actual transfer region; and dry etching a free segment of the die, the free surface of the peripheral region then being partially etched.

A Super System on Chip (SSoC) coupled with a photonic neural learning processor (PNLP), one or more quantum bits (qubits) and a machine learning algorithm for ultrafast data processing, image processing/recognition, deep learning/meta-learning and self-learning is disclosed. The Super System on Chip (SSoC) is interconnected/coupled electrically and/or optically in two-dimension (2-D) or in three-dimension (3-D).

The present invention provides a transmission guided-mode resonant grating integrated spectroscopy device (transmission GMRG integrated spectroscopy device) characterized by comprising, disposed in this order on an optical detector array in which a plurality of diodes are mounted on a substrate made of a semiconductor: a transparent spacer layer; a waveguide layer; a transparent buffer layer provided as desired; a transmission metallic grating layer having a thickness causing surface plasmon; and a transparent protection film layer which is provided as desired.

An integrated microwave photonics (IMWP) apparatus is provided using sapphire as a platform. The IMWP apparatus includes: a sapphire substrate having a step-terrace surface; and a III-V stack layer epitaxially grown on the sapphire substrate. The III-V stack layer includes: a first III-V layer disposed on the sapphire substrate; a low temperature (LT) III-V buffer layer disposed on the first III-V layer; multiple second III-V layers disposed and stacked on the LT III-V buffer layer; a third III-V layer disposed on the second III-V layers; a III-V quantum well layer disposed on the third III-V layers; and a fourth III-V layer disposed on the III-V quantum well layer. The second III-V layers are respectively annealed. A growth temperature of the LT III-V layer and a growth temperature of the III-V quantum well layer are lower than a growth temperature of each of the first, second, third and fourth III-V layers.

Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.

A Semiconductor device includes an insulating layer, an optical waveguide, a first dummy semiconductor film, a second semiconductor film and a third semiconductor film. The optical waveguide is formed on the insulating layer. The first dummy semiconductor film is formed on the insulating layer and is spaced apart from the optical waveguide. The first dummy semiconductor film is formed on the first semiconductor film. The second semiconductor film is integrally formed with the optical waveguide as a single member on the insulating layer. The third semiconductor film is formed on the second semiconductor film. A material of the first dummy semiconductor film is different from a material of the optical waveguide. In plan view, a distance between the optical waveguide and the first dummy semiconductor film in a first direction perpendicular to an extending direction of the optical waveguide is greater than a thickness of the insulating layer.